F1423

F1423 RENESAS | Alldatasheet

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Technical content

TX Differential Input RF Amplifier 600 MHz to 3000 MHz F1423, Rev O 11/6/2015 1 G ENERAL D ESCRIPTION The F1423 is a 600 MHz to 3000 MHz TX differential input / single5ended output RF amplifier used in transmitter applications. The F1423 TX Amp provides 13.1 dB gain with +41.8 dBm OIP3 and 5.1 dB noise figure at 2000 MHz. This device uses a single 5 V supply and 120 mA of ICC. This device is packaged in a 4mm x 4mm, 245pin Thin QFN with 50 ohm differential RF input and 50 ohm single ended RF output impedances for ease of integration into the signal5path. COMPETITIVE ADVANTAGE In typical Base Stations, RF Amplifiers are used in the TX traffic paths to drive the transmit power amplifier. The F1423 TX Amplifier offers very high reliability due to its construction using silicon die in a QFN package. The F1423 includes a broadband differential input to accept AC5coupled signals directly from a balanced modulator or RF DAC architecture.

APPLICATIONS

• Multi5mode, Multi5carrier Transmitters
• GSM850/900 Base Stations
• PCS1900 Base Stations
• DCS1800 Base Stations
• WiMAX and LTE Base Stations
• UMTS/WCDMA 3G Base Stations
• PHS/PAS Base Stations
• Public Safety Infrastructure

FEATURES

• Broadband 600 MHz – 3000 MHz
• 13.1 dB typical gain @ 2000 MHz
• 5.1 dB NF @ 2000 MHz
• +41.8 dBm OIP3 @ 2000 MHz
• +21.5 dBm output P1dB @ 2000 MHz
• Single 5 V supply voltage
• ICC = 120 mA
• Up to +105 °C TCASE operating temperature
• 50 Ω differential input impedance
• 50 Ω single ended output impedance
• Positive gain slope for board loss compensation
• Standby mode for power savings
• 4 mm x 4 mm, 245pin TQFN package FUNCTIONAL B LOCK D IAGRAM RFOUT RFIN STBY BAND SEL

ORDERING INFORMATION

Tape & Reel RF Product Line

Zero-DistortionTM, TX Amplifier 2 ABSOLUTE MAXIMUM RATINGS Parameter Symbol Min Max Units VCC to GND VCC 50.3 +5.5 V STBY, Band_Sel VCntl 50.3 V CC + 0.25 V RBIAS1 IRB1 +1.5 mA RBIAS2 IRB2 +0.8 mA RFIN+, RFIN5, Voltage1 VRFin 50.02 +0.02 V RFIN+, RFIN5, Current1 IRFin 55 +5 mA RFOUT externally applied DC voltage VRFout V CC 5 0.15 V CC + 0.15 V RF Differential Input Power (applied for 24 hours maximum) Pin +22 dBm Continuous Power Dissipation Pdiss 1.5 W Junction Temperature Tj 150 °C Storage Temperature Range Tst 565 150 °C Lead Temperature (soldering, 10s) 260 °C ElectroStatic Discharge – HBM (JEDEC/ESDA JS500152014) Class 2 (2000 V) ElectroStatic Discharge – CDM (JESD 225C101F) Class C3 (1000 V) N ote 1: The RFIN+ and RFIN5 pins connect to an internal balun that presents a very low impedance to ground. S tresses above those listed above may cause permanent damage to the device. Functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. PACKAGE THERMAL AND MOISTURE CHARACTERISTICS θJA (Junction – Ambient) 40 °C/W θJC (Junction – Case) [The Case is defined as the exposed paddle] 4 °C/W Moisture Sensitivity Rating (Per J5STD5020) MSL1

F1423 RECOMMENDED OPERATING CONDITIONS P arameter Symbol Conditions Min Typ Max Units Supply Voltage(s) VCC All V CC pins 4.75 5.25 V Operating Temperature Range T CASE Case Temperature 540 +105 °C RF Frequency Range FRF Operating Range 600 30001 MHz RF Source Impedance ZRFI Differential 50 Ω RF Load Impedance ZRFO Single Ended 50 Ω RF Band Designation2 RF Frequency Range FRF_LB Low5band 600 1100 MHz FRF_MB Mid5band 1400 2100 FRF_HB High5band 2100 30001 FRF_BB Broad5band 600 30001 N ote 1: Though device linearity is specified over the range from 700 MHz to 2700 MHz, gain flatness up to 3000 MHz is specified in the high5band and broadband tables to account for extended DPD bandwidth requirements. Note 2: To optimize RF performance, a different output match will be used for each of the 4 RF bands listed (see Table 2). In addition, different value amplifier bias resistors will be used to optimize performance in each of the 4 bands.

Zero-DistortionTM, TX Amplifier 4 F1423 SPECIFICATION - G ENERAL See F1423 Typical Application Circuit. Unless otherwise stated, specifications apply when operated as a TX RF Amplifier, VCC = +5.0 V, TC = +25 °C. Parameter Symbol Condition Min Typ Max Units Logic Input High VIH 1.1 V Logic Input Low VIL 0.63 Logic Current ISTBY STBY pin -10 +10 µA IBAND Band_Sel pin -10 +10 Supply Current3 ICC_LB Low5band bias setting 103 mA ICC_MB Mid5band bias setting 120 ICC_HB High5band bias setting 120 ICC_BB Broad5band bias setting 120 135 1 Standby Current ICC_STBY STBY = 5V 0.8 1.0 mA Power ON switching time T ON 50% STBY to RF output settled to within ±0.5dB 1 µs Power OFF switching time T OFF 50% STBY to DC standby current settled to within ±2mA of final ICC value 1 µs N ote 1: Items in min/max columns in bold italics are Guaranteed by Test. Note 2: Items in min/max columns that are not bold/italics are Guaranteed by Design Characterization. Note 3: Use external resistors to set amplifier bias currents to optimize device linearity. See Table 2.

F1423 SPECIFICATION – LOW-BAND See F1423 Typical Application Circuit. Unless otherwise stated, specifications apply when operated as a TX RF Amplifier, VCC = +5.0 V, TC = +25 °C, FRF = 700 MHz, Pout = +7 dBm, R8 =2.1 kΩ, R9 =9.1 kΩ, C1 = 9 pF, Rsource = 50 Ω differential, Rload = 50 Ω single5ended, Band_Sel = open, EVKit trace connector and transformer losses are de5embedded. Parameter Symbol Condition Min Typ Max Units RF Input Return Loss RFIN RL_LB 17 dB RF Output Return Loss RFOUT RL_LB 12.8 dB Common Mode Rejection CMRR LB 700 MHz to 1100 MHz 20.7 dB Gain GLB 12.0 1 12.6 13.2 dB Gain Flatness GFLAT_LB Any 400 MHz BW from 700 MHz to 1100 MHz 0.4 dB Gain Ripple GRIPPLE_LB In any 20 MHz range over RF Band ±0.04 dB Noise Figure3 NFLB 4.5 dB Tcase = +105 °C 5.4 Output Third Order Intercept Point3 OIP3LB Pout = +4 dBm/tone

5 MHz tone separation 39

2 4 2.5 dBm Output 1dB Compression3 OP1dB LB 20 21.1 dBm F

1423 SPECIFICATION – MID -BAND

See F1423 Typical Application Circuit Unless otherwise stated, specifications apply when operated as a TX RF Amplifier, VCC = +5.0 V, TC = +25 °C, FRF = 2000 MHz, Pout = +7 dBm, R8 =2.4 kΩ, R9 =60.4 kΩ, C1 = 9 pF, Rsource = 50 Ω differential, Rload = 50 Ω single5ended, Band_Sel = GND, EVKit trace connector and transformer losses are de5embedded. Parameter Symbol Condition Min Typ Max Units RF Input Return loss RFIN RL_MB 15 dB RF Output Return Loss RFOUT RL_MB 16.5 dB Common Mode Rejection CMRR MB 1400 MHz to 2100 MHz 19.0 dB Gain GMB 12.5 1 13.1 13.7 dB Gain Flatness GFLAT_MB Any 400MHz BW from 1400 MHz to 2100 MHz 0.17 dB Gain Ripple GRIPPLE_MB In any 20 MHz range over RF Band ±0.01 dB Noise Figure3 NFMB 5.1 dB Tcase = +105 °C 5.8 Output Third Order Intercept Point3 OIP3MB Pout = +4 dBm/tone 5MHz tone separation 38.8 2 4 1.8 dBm Output 1dB Compression3 OP1dB MB 20.3 21.5 dBm N ote 1: Items in min/max columns in bold italics are Guaranteed by Test. Note 2: Items in min/max columns that are not bold/italics are Guaranteed by Design Characterization. Note 3: Measured using external 1:1 transformer at the RF input.

Zero-DistortionTM, TX Amplifier 6 F1423 Specification – High-Band S ee F1423 Typical Application Circuit. Unless otherwise stated, specifications apply when operated as a TX RF Amplifier, VCC = +5.0 V, TC = +25 °C, FRF = 2700 MHz, Pout = +7 dBm, R8 =2.4 kΩ, R9 =60.4 kΩ, C1 = 6 pF, Rsource = 50 Ω differential, Rload = 50 Ω single5ended, Band_Sel = GND, EVKit trace connector and transformer losses are de5embedded. Parameter Symbol Condition Min Typ Max Units RF Input Return loss RFIN RL_HB 15.5 dB RF Output Return Loss RFOUT RL_HB 20 dB Common Mode Rejection CMRR HB 2100 MHz to 3000 MHz 18.5 dB Gain GHB 12.4 1 13.1 13.9 dB Gain Flatness GFLAT_HB Any 400 MHz BW from 2100 MHz to 3000 MHz 0.23 dB Gain Ripple GRIPPLE_HB In any 20 MHz range over RF Band ±0.015 dB Noise Figure3 NFHB 6.0 dB Tcase = +105 °C 6.6 Output Third Order Intercept Point

3 OIP3HB Pout = +4 dBm/tone

5MHz tone separation 37.3 dBm Output 1dB Compression3 OP1dB HB 20.02 20.6 dBm F

1423 Specification – Broad-Band

S ee F1423 Typical Application Circuit. Unless otherwise stated, specifications apply when operated as a TX RF Amplifier, VCC = +5.0 V, TC = +25 °C, FRF = 2200 MHz, Pout = +7 dBm, R8 =2.4 kΩ, R9 =60.4 kΩ, C1 = 9 pF, Rsource = 50 Ω differential, Rload = 50 Ω single5ended, Band_Sel = GND, EVKIT trace connector and transformer losses are de5embedded. Parameter Symbol Condition Min Typ Max Units RF Input Return loss RFIN RL_BB 15.0 dB RF Output Return Loss RFOUT RL_BB 18.5 dB Common Mode Rejection CMRR BB 700 MHz to 3000 MHz 18.5 dB Gain GBB 12.6 1 13.2 13.8 dB Gain Flatness GFLAT_BB Any 400 MHz BW from 700 MHz to 3000 MHz 0.4 dB Gain Ripple GRIPPLE_BB In any 20 MHz range over 400 MHz BW ±0.04 dB Gain Slope GSLOPE_BB ±0.002 dB/MHz Noise Figure3 NFBB 5.2 dB Tcase = +105 °C 5.8 Output Third Order Intercept Point

3 OIP3BB Pout = +4 dBm/tone

5 MHz tone separation 41.4 dBm Output 1dB Compression3 OP1dB BB 20.52 21.4 dBm N ote 1: Items in min/max columns in bold italics are Guaranteed by Test. Note 2: Items in min/max columns that are not bold/italics are Guaranteed by Design Characterization. Note 3: Measured using external 1:1 transformer at the RF input.

T able1: STBY Truth Table Parameter Level Function STBY Logic Low or Open Circuit Powered On Logic High Powered Off T able2: Component Settings for Optimized Linearity Performance per RF band Band Frequency Range (MHz) Band_Sel (Pin 11) Pin 14 to GND (kΩ) Pin 15 to GND (kΩ) (pF) ICC (mA) Low 5 Band 600 5 1100 Open 2.1 9.1 9 104 Mid 5 Band 1400 5 2100 GND 2.4 60.4 9 120 High 5 Band 2100 5 3000 GND 2.4 60.4 6 120 Broad 5 Band 700 5 3000 GND 2.4 60.4 9 120 TYPICAL OPERATING CONDITIONS (TOC) U nless otherwise noted for the TOC graphs on the following pages, the following conditions apply.

• Vcc= 5.0 V
• Tcase = 25 °C (All temperatures are referenced to the exposed paddle).
• ZS = 50 Ohms Differential
• ZL = 50 Ohms Single Ended
• Board configured as defined in Table 2 for each band.
• Pout = 4 dBm / Tone
• 5 MHz Tone Spacing
• EVKIT traces, connectors, and transformer losses are de-embedded.
• S-parameters (S11, S21, S12, and S22) measured using a de-embedded Differential Board EVKit and the inputs are mathematically combined using an ideal 1:1 (50 Ω : 50 Ω) transformer to produce the 2 port S-parameters.
• Amplitude and phase imbalances measures RFIN+ to RFOUT and compares to RFIN- to RFOUT. Phase imbalance is the deviation from an ideal 180 degrees.
• OIP3, Output P1dB and Noise Figure measured using a Transformer Board EVKit. Note: The use of the external transformer T1 is included for simple 2 port evaluation purposes. At some frequencies the external transformer interacts with the on5chip balun affecting the gain and noise figure flatness responses. These interactions have been removed from the noise figure TOCs.

Zero-DistortionTM, TX Amplifier 8 TOCS [DIFFERENTIAL B OARD S-PARS, AMPLITUDE AND PHASE IMBALANCE , B ROAD-BAND B IAS](-1-) R F Gain vs. Vcc and TCASE Output Match vs. Vcc and TCASE Amplitude Imbalance vs. TCASE Input Match vs. Vcc and TCASE Reverse Gain vs. Vcc and TCASE Phase Imbalance vs. TCASE 10.5 11.5 12.5 13.5 14.5 Gain (dB) Frequency (GHz) 4.75V, 25C 5.00V, 25C 5.25V, 25C 4.75V, 105C 5.00V, 105C 5.25V, 105C -30 -25 -20 -15 -10 Output Match (dB) Frequency (GHz) 4.75V, 25C 5.00V, 25C 5.25V, 25C 4.75V, 105C 5.00V, 105C 5.25V, 105C -1.5 -0.5 0.5 1.5 Amplitude Imbalance (dB) Frequency (GHz) -40C 25C 105C ZS= 25Ohm/ port ZL = 50 Ohm -40 -35 -30 -25 -20 -15 -10 Input Match (dB) Frequency (GHz) 4.75V, 25C 5.00V, 25C 5.25V, 25C 4.75V, 105C 5.00V, 105C 5.25V, 105C -28 -26 -24 -22 -20 -18 -16 -14 -12 Reverse Gain (dB) Frequency (GHz) 4.75V, 25C 5.00V, 25C 5.25V, 25C 4.75V, 105C 5.00V, 105C 5.25V, 105C -20 -15 -10 Phase Imbalance (deg) Frequency (GHz) -40C 25C 105C ZS= 25Ohm/ port ZL = 50 Ohm

TOCS [TRANSFORMER B OARD, OIP3, P1dB, N OISE FIGURE, ICC, B ROAD-BAND B IAS](-2-) O IP3 vs. Vcc and TCASE Output P1dB vs. Vcc and TCASE Icc vs. Vcc and TCASE OIP3 vs. Pout Level Noise Figure vs. Vcc and TCASE OIP3 (dBm) Frequency (GHz) 4.75V, 25C 5.00V, 25C 5.25V, 25C 4.75V, 105C 5.00V, 105C 5.25V, 105C OP1dB (dBm) Frequency (GHz) 4.75V, 25C 5.00V, 25C 5.25V, 25C 4.75V, 105C 5.00V, 105C 5.25V, 105C 100 105 110 115 120 125 130 135 140 4.75 5 5.25 Icc (mA) Vcc (Volts) -40C 25C 105C OIP3 (dBm) Frequency (GHz) 0dBm/tone 2dBm/tone 4dBm/tone 4.5 5.5 6.5 7.5 Noise Figure (dB) Frequency (GHz) 4.75V, 25C 5.00V, 25C 5.25V, 25C 4.75V, 105C 5.00V, 105C 5.25V, 105C

Zero-DistortionTM, TX Amplifier 10 TOCS [DIFFERENTIAL B OARD S-PARS, AMPLITUDE AND PHASE IMBALANCE , LOW-BAND B IAS](-3-) R F Gain vs. Vcc and TCASE Output Match vs. Vcc and TCASE Amplitude Imbalance vs. TCASE Input Match vs. Vcc and TCASE Reverse Gain vs. Vcc and TCASE Phase Imbalance vs. TCASE 10.5 11.5 12.5 13.5 14.5 Gain (dB) Frequency (GHz) 4.75V, 25C 5.00V, 25C 5.25V, 25C 4.75V, 105C 5.00V, 105C 5.25V, 105C -30 -25 -20 -15 -10 Output Match (dB) Frequency (GHz) 4.75V, 25C 5.00V, 25C 5.25V, 25C 4.75V, 105C 5.00V, 105C 5.25V, 105C -1.5 -0.5 0.5 1.5 Amplitude Imbalance (dB) Frequency (GHz) -40C 25C 105C ZS= 25Ohm/ port ZL = 50 Ohm -40 -35 -30 -25 -20 -15 -10 Input Match (dB) Frequency (GHz) 4.75V, 25C 5.00V, 25C 5.25V, 25C 4.75V, 105C 5.00V, 105C 5.25V, 105C -28 -26 -24 -22 -20 -18 -16 -14 -12 Reverse Gain (dB) Frequency (GHz) 4.75V, 25C 5.00V, 25C 5.25V, 25C 4.75V, 105C 5.00V, 105C 5.25V, 105C -20 -15 -10 Phase Imbalance (deg) Frequency (GHz) -40C 25C 105C ZS= 25Ohm/ port ZL = 50 Ohm

TOCS [TRANSFORMER B OARD, OIP3, P1dB, N OISE FIGURE, ICC, LOW-BAND B IAS](-4-) O IP3 vs. Vcc and TCASE Noise Figure vs. Vcc and TCASE Output P1dB vs. Vcc and TCASE Icc vs. Vcc and TCASE OIP3 (dBm) Frequency (GHz) 4.75V, 25C 5.00V, 25C 5.25V, 25C 4.75V, 105C 5.00V, 105C 5.25V, 105C 3.5 4.5 5.5 6.5 Noise Figure (dB) Frequency (GHz) 4.75V, 25C 5.00V, 25C 5.25V, 25C 4.75V, 105C 5.00V, 105C 5.25V, 105C Output P1dB (dBm) Frequency (GHz) 4.75V, 25C 5.00V, 25C 5.25V, 25C 4.75V, 105C 5.00V, 105C 5.25V, 105C 100 105 110 115 120 125 4.75 5 5.25 Icc (mA) Vcc (Volts) -40C 25C 105C

Zero-DistortionTM, TX Amplifier 12 TOCS [DIFFERENTIAL B OARD S-PARS, AMPLITUDE AND PHASE IMBALANCE , MID -BAND B IAS](-5-) R F Gain vs. Vcc and TCASE Output Match vs. Vcc and TCASE Amplitude Imbalance vs. TCASE Input Match vs. Vcc and TCASE Reverse Gain vs. Vcc and TCASE Phase Imbalance vs. TCASE 10.5 11.5 12.5 13.5 14.5 Gain (dB) Frequency (GHz) 4.75V, 25C 5.00V, 25C 5.25V, 25C 4.75V, 105C 5.00V, 105C 5.25V, 105C -30 -25 -20 -15 -10 Output Match (dB) Frequency (GHz) 4.75V, 25C 5.00V, 25C 5.25V, 25C 4.75V, 105C 5.00V, 105C 5.25V, 105C -1.5 -0.5 0.5 1.5 Amplitude Imbalance (dB) Frequency (GHz) -40C 25C 105C ZS= 25Ohm/ port ZL = 50 Ohm -30 -25 -20 -15 -10 Input Match (dB) Frequency (GHz) 4.75V, 25C 5.00V, 25C 5.25V, 25C 4.75V, 105C 5.00V, 105C 5.25V, 105C -28 -26 -24 -22 -20 -18 -16 -14 -12 Reverse Gain (dB) Frequency (GHz) 4.75V, 25C 5.00V, 25C 5.25V, 25C 4.75V, 105C 5.00V, 105C 5.25V, 105C -20 -15 -10 Phase Imbalance (deg) Frequency (GHz) -40C 25C 105C ZS= 25Ohm/ port ZL = 50 Ohm

TOCS [TRANSFORMER B OARD, OIP3, P1dB, N OISE FIGURE, ICC, MID -BAND B IAS](-6-) O IP3 vs. Vcc and TCASE Noise Figure vs. Vcc and TCASE Output P1dB vs. Vcc and TCASE Icc vs. Vcc and TCASE OIP3 (dBm) Frequency (GHz) 4.75V, 25C 5.00V, 25C 5.25V, 25C 4.75V, 105C 5.00V, 105C 5.25V, 105C 4.5 5.5 6.5 7.5 Noise Figure (dB) Frequency (GHz) 4.75V, 25C 5.00V, 25C 5.25V, 25C 4.75V, 105C 5.00V, 105C 5.25V, 105C OP1dB (dBm) Frequency (GHz) 4.75V, 25C 5.00V, 25C 5.25V, 25C 4.75V, 105C 5.00V, 105C 5.25V, 105C 100 105 110 115 120 125 130 135 140 4.75 5 5.25 Icc (mA) Vcc (Volts) -40C 25C 105C

Zero-DistortionTM, TX Amplifier 14 TOCS [DIFFERENTIAL B OARD S-PARS, AMPLITUDE AND PHASE IMBALANCE , HIGH-BAND B IAS](-7-) R F Gain vs. Vcc and TCASE Output Match vs. Vcc and TCASE Amplitude Imbalance vs. TCASE Input Match vs. Vcc and TCASE Reverse Gain vs. Vcc and TCASE Phase Imbalance vs. TCASE 10.5 11.5 12.5 13.5 14.5 Gain (dB) Frequency (GHz) 4.75V, 25C 5.00V, 25C 5.25V, 25C 4.75V, 105C 5.00V, 105C 5.25V, 105C -30 -25 -20 -15 -10 Output Match (dB) Frequency (GHz) 4.75V, 25C 5.00V, 25C 5.25V, 25C 4.75V, 105C 5.00V, 105C 5.25V, 105C -1.5 -0.5 0.5 1.5 Amplitude Imbalance (dB) Frequency (GHz) -40C 25C 105C ZS= 25Ohm/ port ZL = 50 Ohm -40 -35 -30 -25 -20 -15 -10 Input Match (dB) Frequency (GHz) 4.75V, 25C 5.00V, 25C 5.25V, 25C 4.75V, 105C 5.00V, 105C 5.25V, 105C -28 -26 -24 -22 -20 -18 -16 -14 -12 Reverse Gain (dB) Frequency (GHz) 4.75V, 25C 5.00V, 25C 5.25V, 25C 4.75V, 105C 5.00V, 105C 5.25V, 105C -20 -15 -10 Phase Imbalance (deg) Frequency (GHz) -40C 25C 105C ZS= 25Ohm/ port ZL = 50 Ohm

TOCS [TRANSFORMER B OARD, OIP3, P1dB, N OISE FIGURE, ICC, ACLR, HIGH-BAND B IAS](-8-) O IP3 vs. Vcc and TCASE Noise Figure vs. Vcc and TCASE WCDMA ACLR vs. Pout (PAR = 4.3 dB) Output P1dB vs. Vcc and TCASE Icc vs. Vcc and TCASE WCDMA ACLR vs. Pout (PAR = 11.4 dB) OIP3 (dBm) Frequency (GHz) 4.75V, 25C 5.00V, 25C 5.25V, 25C 4.75V, 105C 5.00V, 105C 5.25V, 105C 4.5 5.5 6.5 7.5 Noise Figure (dB) Frequency (GHz) 4.75V, 25C 5.00V, 25C 5.25V, 25C 4.75V, 105C 5.00V, 105C 5.25V, 105C -80 -70 -60 -50 -40 -30 -20 2 3 4 5 6 7 8 9 10 11 12 ACLR (dBc) Average WCDMA POUT (dBm) ACLR1+ ACLR1- ACLR2+ ACLR2- Measurement at 2.7 GHz 1 DPCH, PAR = 4.3 dB Specified Pout = 7 dBm OP1dB (dBm) Frequency (GHz) 4.75V, 25C 5.00V, 25C 5.25V, 25C 4.75V, 105C 5.00V, 105C 5.25V, 105C 100 105 110 115 120 125 130 135 140 4.75 5 5.25 Icc (mA) Vcc (Volts) -40C 25C 105C -80 -70 -60 -50 -40 -30 -20 2 3 4 5 6 7 8 9 10 11 12 ACLR (dBc) Average WCDMA POUT (dBm) ACLR1+ ACLR1- ACLR2+ ACLR2- Measurement at 2.7 GHz 64 DPCH, PAR = 11.4 dB Specified Pout = 7 dBm

Zero-DistortionTM, TX Amplifier 16 PACKAGE D RAWING (4 mm x 4 mm 245pin TQFN), NBG24 N OTE: THE F1423 USES THE P2 EXPOSED PADDLE DIMENSIONS NOTED BELOW

L and Pattern to Support 2.6 mm x 2.6 mm Exposed Paddle Version (See Version P2 of Package Drawing)

Zero-DistortionTM, TX Amplifier 18 PIN D IAGRAM RFIN+ NC RFIN- GND STBY VCC NC GND GND GND NC Control Circuit E.P. NC NC Band_Sel GND RBIAS1 RBIAS2 RFOUT GND NC GND NC NC NC PIN D ESCRIPTION Pin Name Function 1 RFIN+ Differential Input +. Pin looks like a DC short to ground. Must use external DC block if DC is present on RF line. 2, 4, 9, 12, 16, 18, 23 GND Ground these pins. These pins are internally connected to the exposed paddle. 3 RFIN5 Differential Input 5. Pin looks like a DC short to ground. Must use external DC block if DC is present on RF line. 5, 6, 7, 8, 19, 20, 21, 22, 24 NC No internal connection. OK to connect to GND, OK to connect to VCC. Application circuit ties these pins to ground. 10 VCC 5 V Power Supply. Connect to VCC and use bypass capacitors as close to the pin as possible.

11 Band_Sel

Leave pin open circuited for low5band select and connect 0 Ω resistor to GND for high5band select. Internally this pin has a 1.5 MΩ pull5up resistor that connects to VCC.

13 STBY

Standby (High= device power OFF, Low/Open = device power ON). Internally this pin has a 1 MΩ pull5down resistor that is connected to GND. 14 RBIAS1 Connect external resistor to GND. Use value in Table 2. 15 RBIAS2 Connect external resistor to GND. Use value in Table 2. 17 RFOUT RF output. Must use external DC block as close to the pin as possible. — EP Exposed Pad. Internally connected to GND. Solder this exposed pad to a PCB pad that uses multiple ground vias to provide heat transfer out of the device into the PCB ground planes. These multiple ground vias are also required to achieve the noted RF performance.

The F1423 has been optimized for use in high performance RF applications from 600 MHz to 3000 MHz. STBY The STBY control pin allows for power saving when th e device is not in use. Setting the STBY pin to a logic low, or leaving the pin open, will put the device in normal operation mode. The STBY pin has an internal 1 Meg ohm resistor to ground. Applying a logic high to this pin will put the part in standby mode. Voltage should not be applied to the STBY pin without VCC present. Band_Sel The Band_Sel control pin can be used to adjust the c urrent in the device for Mid Band, High Band, and Wide Band frequency applications. This is done by grounding the Band_Sel pin. Internally there is a 1.5 Meg ohm pull5up resistor. Voltage should not be applied to the Band_Sel pin without VCC present. RBias1 and RBias2 RBIAS1 (pin 14) and RBIAS2 (pin 15) use a single ext ernal resistor to ground on each pin to set the DC current in the device and to optimize the linearity performance of the amplifier stage. The resistor values in Table 2 can be used as a guide for the RF band of interest. By decreasing the resistor value to ground on the RBIAS1 pin will increase the DC current in the amplifier stage. The resistor to ground on RBIAS2 is used to optimize the linearity performance in conjunction with the resistor on RBIAS1. Amplifier Stability To ensure unconditional stability the value of R1 sh ould be set to 510 Ohms. This will reduce the RF Gain, OIP3, and OP1dB by approx 0.4 dB. Additionally, shunt resistors to ground of approximately 1k ohm should be connected from pin 1 to ground and pin 3 to ground. This will stabilize the circuit due to common mode source impedances. The installed 1k resistor will add 0.1 dB degradation to the Gain and Noise Figure. The 1k ohm will also dampen any common mode amplitude and phase interactions from the differential source impedance and the F1423 differential input impedance. Power Supplies A common VCC power supply should be used for all pin s requiring DC power. All supply pins should be bypassed with external capacitors to minimize noise and fast transients. Supply noise can degrade noise figure and fast transients can trigger ESD clamps and cause them to fail. Supply voltage change or transients should have a slew rate smaller than 1 V / 20 µs. In addition, all control pins should remain at 0 V (+/50.3 V) while the supply voltage ramps or while it returns to zero. Control Pin Interface If control signal integrity is a concern and clean s ignals cannot be guaranteed due to overshoot, undershoot, ringing, etc., the following circuit at the input of each control pin is recommended. This applies to all control pins 11 and 13. Note the recommended resistor and capacitor values do not necessarily match the EV kit BOM for the case of poor control signal integrity. F1423 Exposed Pad (GND) 5k ohm STBY 2pF 5k ohm 2pF Band_Sel

Zero-DistortionTM, TX Amplifier 20 EVKIT PICTURE (DIFFERENTIAL B OARD) EVKIT PICTURE (TRANSFORMER B OARD)

EVKIT / APPLICATIONS CIRCUIT (DIFFERENTIAL B OARD) EVKit / Applications Circuit (Transformer Board)

Zero-DistortionTM, TX Amplifier 22 E VKIT BOM (DIFFERENTIAL B OARD) Part Ref QTY DESCRIPTION Mfr. Part # Mfr. C1 1 9.0 pF ±0.25 pF, 50 V, C0G, Ceramic Capacitor (0402) GRM1555C1H9R0C Murata C2 1 1000 pF ±5%, 50 V, C0G, Ceramic Capacitor (0402) GRM1555C1H102J Murata C3 1 0.1 µF ±10%, 16 V, X7R, Ceramic Capacitor (0402) GRM155R71C104K Murata C4 1 10 µF ±20%, 6.3 V, X5R, Ceramic Capacitor (0603) GRM188R60J106M Murata R1 1 Not installed (0402) R2, R3, R4 3 0 Ω Resistor, 1/10W, (0402) ERJ52GE0R00X Panasonic R5, R6 0 Not installed R7 1 2.1k Ω ±1%, Resistor, 1/10W, (0402) ERJ52RKF2101X Panasonic R8 1 2.4k Ω ±1%, Resistor, 1/10W, (0402) ERJ52RKF2401X Panasonic R9 1 60.4k Ω ±1%, Resistor, 1/10W, (0402) ERJ52RKF6042X Panasonic R10 1 9.1k Ω ±1%, Resistor, 1/10W, (0402) ERJ52RKF9101X Panasonic R11 1 Not installed R12 1 Not installed J1, J2, J3, J9 4 SMA_END_LAUNCH (small) 142507115821 Emerson Johnson J4, J5, J8 3 CONN HEADER VERT 2 x 1 Gold 961102564045AR 3M J6, J7 2 CONN HEADER VERT 2 x 4 Gold 679975108HLF FCI U1 1 RF Amplifier F1423NBGI IDT

1 Printed Circuit Board (3 port) F1423 EVKIT (3 por t)

E VKIT BOM (TRANSFORMER B OARD) Part Ref QTY DESCRIPTION Mfr. Part # Mfr. C1 1 9.0 pF ±0.25 pF, 50 V, C0G, Ceramic Capacitor (0402) GRM1555C1H9R0C Murata C2 1 1000 pF ±5%, 50 V, C0G, Ceramic Capacitor (0402) GRM1555C1H102J Murata C3 1 0.1 µF ±10%, 16 V, X7R, Ceramic Capacitor (0402) GRM155R71C104K Murata C4 1 10 µF ±20%, 6.3 V, X5R, Ceramic Capacitor (0603) GRM188R60J106M Murata R1 1 Not installed (0402) R2, R3, R4 3 0 Ω Resistor, 1/10W, (0402) ERJ52GE0R00X Panasonic R5, R6 0 Not installed R7 1 2.1k Ω ±1%, Resistor, 1/10W, (0402) ERJ52RKF2101X Panasonic R8 1 2.4k Ω ±1%, Resistor, 1/10W, (0402) ERJ52RKF2401X Panasonic R9 1 60.4k Ω ±1%, Resistor, 1/10W, (0402) ERJ52RKF6042X Panasonic R10 1 9.1k Ω ±1%, Resistor, 1/10W, (0402) ERJ52RKF9101X Panasonic R11 1 Not installed R12 1 Not installed R13, R14 2 510 Ω ±1%, Resistor, 1/10W, (0402) (Note 1) ERJ52RKF5100X Panasonic T1 1 1:1 wideband transformer TC151543+ Mini Circuits J1, J3, J9 3 SMA_END_LAUNCH (small) 142507115821 Emerson Johnson J4, J5, J8 3 CONN HEADER VERT 2 x 1 Gold 961102564045AR 3M J6, J7 2 CONN HEADER VERT 2 x 4 Gold 679975108HLF FCI U1 1 RF Amplifier F1423NBGI IDT

1 Printed Circuit Board (Transformer) F1423 EVKIT X FMR

Note 1: When using an external transformer for evaluation, a common mode resonance interaction can occur with the on5chip balun. Resistors R13 and R14 will dampen the resonance but affects the Gain and NF by approx 0.2dB. TOP MARKINGS IDTF14 23NBGI Z512ACG Part Number Date Code [YWW] (Week 12 of 2015) ASM Test Step Assembler Code

Zero-DistortionTM, TX Amplifier 24 EVKIT OPERATION T he F1423 EVkits (single ended and differential) have a number of control features available. STBY (2 pin Header J5) Two5pin header J5 can be used to set the part for op erational or standby mode. Leaving the two J5 pins unconnected will place it in the operational mode. Connecting the two J5 pins together will pull up the STBY pin to Vcc through R4 and place the part into the standby mode. Band_Sel (2 pin Header J4) Two5pin header J4 can be used to set the part for be st operational performance in different RF bands. Based on Table 2 above the Low5Band performance is best with these two J4 pins left open while the other bands typically have these two pins shorted together. RF Band Biasing (RBIAS1, RBIAS2, Band_Sel) Below are 4 settings showing the recommended J4, J7, and J8 jumper connections for best linearity performance in the different RF bands. The jumpers (shown in red below) select the RBIAS1 and RBIAS2 resistor values along with the Band_Sel setting (see Table 2 above). Never have two shunts installed at the same time on header J7 since this may produce excessive bias current and damage the part. Broad-Band Low-Band Mid-Band High-Band

Rev Date Page Description of Change O 20155 Nov56 Initial Release

Zero-DistortionTM, TX Amplifier 26 Rev O 11/6/2015 Corporate Headquarters

6024 Silver Creek Valley Road

San Jose, CA 95138 USA Sales 1-800-345-7015 or 408-284-8200 Fax: 408-284-2775 www.idt.com Tech Support http://www.idt.com/support/technical-support DISCLAIMER Integrated Device Technology, Inc. (IDT) reserves the right to modify the products and/or specifications described herein at any time, without notice, at IDT’s sole discretion. Performance specifications and operating parameters of the described products are determined in an independent state and are not guaranteed to perform the same way when installed in customer products. The information contained herein is provided without representation or warranty of any kind, whether express or implied, including, but not limited to, the suitability of IDT’s products for any particular purpose, an implied warranty of merchantability, or non5infringement of the intellectual property rights of others. This document is presented only as a guide and does not convey any license under intellectual property rights of IDT or any third parties. IDT’s products are not intended for use in applications involving extreme environmental conditions or in life support systems or similar devices where the failure or malfunction of an IDT product can be reasonably expected to significantly affect the health or safety of users. Anyone using an IDT product in such a manner does so at their own risk, absent an express, written agreement by IDT. Integrated Device Technology, IDT and the IDT logo are trademarks or registered trademarks of IDT and its subsidiaries in the United States and other countries. Other trademarks used herein are the property of IDT or their respective third party owners. Copyright ©2015. Integrated Device Technology, Inc. All rights reserved.

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