F1404Z

IRF1404ZSTRL IRF | Alldatasheet

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ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V A ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) IDM Pulsed Drain Current /c99 PD @TC = 25°C Power Dissipation W Linear Derating Factor W/°C VGS Gate-to-Source Voltage V EAS (Thermally limited) Single Pulse Avalanche Energy/c100 mJ EAS (Tested ) Single Pulse Avalanche Energy Tested Value /c104 IAR Avalanche Current/c3/c99 A EAR Repetitive Avalanche Energy /c103 mJ TJ Operating Junction and TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds Mounting Torque, 6-32 or M3 screw /c105 Thermal Resistance Parameter Typ. Max. Units RθJC Junction-to-Case ––– 0.65 °C/W RθCS Case-to-Sink, Flat Greased Surface /c105 0.50 ––– RθJA Junction-to-Ambient /c105 ––– 62 RθJA Junction-to-Ambient (PCB Mount) /c106 ––– 40 480 320 See Fig.12a, 12b, 15, 16 220 1.5 ± 20 Max. 190 130 750 -55 to + 175 300 (1.6mm from case ) 10 lbf/c121 in (1.1N/c121 m) PD - 94634B

/G73/G82/G70/G49/G52/G48/G52/G90/G83/G95/G76 2 www.irf.com Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units V(BR)DSS Drain-to-Source Breakdown Voltage 40 ––– ––– V ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient ––– 0.033 ––– V/°C RDS(on) Static Drain-to-Source On-Resistance ––– 2.7 3.7 mΩ VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V gfs Forward Transconductance 170 ––– ––– V IDSS Drain-to-Source Leakage Current ––– ––– 20 μA IGSS Gate-to-Source Forward Leakage ––– ––– 200 nA Gate-to-Source Reverse Leakage ––– ––– -200 Qg Total Gate Charge ––– 100 150 Qgs Gate-to-Source Charge ––– 31 ––– nC Qgd Gate-to-Drain ("Miller") Charge ––– 42 ––– td(on) Turn-On Delay Time ––– 18 ––– td(off) Turn-Off Delay Time ––– 36 ––– ns tf F a l l T i m e – – –5 8– – – LD Internal Drain Inductance ––– 4.5 ––– Between lead, nH 6mm (0.25in.) LS Internal Source Inductance ––– 7.5 ––– from package and center of die contact Ciss Input Capacitance ––– 4340 ––– Coss Output Capacitance ––– 1030 ––– Crss Reverse Transfer Capacitance ––– 550 ––– pF Coss Output Capacitance ––– 3300 ––– Coss Output Capacitance ––– 920 ––– Coss eff. Effective Output Capacitance ––– 1350 ––– Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current ––– ––– 75 (Body Diode) A ISM Pulsed Source Current ––– ––– 750 (Body Diode) /c3/c99 VSD Diode Forward Voltage ––– ––– 1.3 V trr Reverse Recovery Time ––– 28 42 ns Qrr Reverse Recovery Charge ––– 34 51 nC ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) VDS = 25V, ID = 75A ID = 75A VDS = 32V Conditions VGS = 10V /c101 VGS = 0V VDS = 25V ƒ = 1.0MHz VGS = 20V VGS = -20V MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25°C, IS = 75A, VGS = 0V /c101 TJ = 25°C, IF = 75A, VDD = 20V di/dt = 100A/μs /c101 Conditions VGS = 0V, ID = 250μA Reference to 25°C, ID = 1mA VGS = 10V, ID = 75A /c101 VDS = VGS, ID = 250μA VDS = 40V, VGS = 0V VDS = 40V, VGS = 0V, TJ = 125°C VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz VGS = 0V, VDS = 32V, ƒ = 1.0MHz VGS = 0V, VDS = 0V to 32V /c102 VGS = 10V /c101 VDD = 20V ID = 75A RG = 3.0 Ω

/G73/G82/G70/G49/G52/G48/G52/G90/G83/G95/G76 www.irf.com 3 Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics Fig 3. Typical Transfer Characteristics Fig 4. Typical Forward Transconductance Vs. Drain Current 0.1 1 10 100 VDS, Drain-to-Source Voltage (V) 0.1 100 1000 ID, Drain-to-Source Current (A) 4.5V 20μs PULSE WIDTH Tj = 25°C /G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G86/G71/G83 /G32/G84/G79/G80/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G49/G53/G86 /G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G49/G48/G86 /G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G56/G46/G48/G86 /G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G55/G46/G48/G86 /G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G54/G46/G48/G86 /G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G53/G46/G53/G86 /G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G53/G46/G48/G86 /G66/G79/G84/G84/G79/G77/G32/G32/G52/G46/G53/G86 0.1 1 10 100 VDS, Drain-to-Source Voltage (V) 100 1000 ID, Drain-to-Source Current (A) 4.5V 20μs PULSE WIDTH Tj = 175°C /G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G86/G71/G83 /G32/G84/G79/G80/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G49/G53/G86 /G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G49/G48/G86 /G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G56/G46/G48/G86 /G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G55/G46/G48/G86 /G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G54/G46/G48/G86 /G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G53/G46/G53/G86 /G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G53/G46/G48/G86 /G66/G79/G84/G84/G79/G77/G32/G32/G52/G46/G53/G86 0 40 80 120 160 ID, Drain-to-Source Current (A) 120 160 200 Gfs, Forward Transconductance (S) TJ = 25°C TJ = 175°C VDS = 15V 20μs PULSE WIDTH VGS, Gate-to-Source Voltage (V) 100 1000 ID, Drain-to-Source Current ( A) TJ = 25°C TJ = 175°C VDS = 15V 20μs PULSE WIDTH

/G73/G82/G70/G49/G52/G48/G52/G90/G83/G95/G76 4 www.irf.com Fig 8. Maximum Safe Operating Area Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 7. Typical Source-Drain Diode Forward Voltage 1 10 100 VDS, Drain-to-Source Voltage (V) 2000 4000 6000 8000 C, Capacitance (pF) Coss Crss Ciss VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd 0 40 80 120 160 QG Total Gate Charge (nC) VGS, Gate-to-Source Voltage (V) VDS= 32V VDS= 20V ID= 75A VSD, Source-toDrain Voltage (V) 0.1 1.0 10.0 100.0 1000.0 ISD, Reverse Drain Current (A) TJ = 25°C TJ = 175°C VGS = 0V 0 1 10 100 1000 VDS , Drain-toSource Voltage (V) 100 1000 10000 ID, Drain-to-Source Current (A) Tc = 25°C Tj = 175°C Single Pulse 1msec 10msec OPERATION IN THIS AREA LIMITED BY RDS(on) 100μsec

/G73/G82/G70/G49/G52/G48/G52/G90/G83/G95/G76 www.irf.com 5 Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10. Normalized On-Resistance Vs. Temperature 25 50 75 100 125 150 175 TC , Case Temperature (°C) 120 160 200 ID , Drain Current (A) LIMITED BY PACKAGE -60 -40 -20 0 20 40 60 80 100 120 140 160 180 TJ , Junction Temperature (°C) 0.5 1.0 1.5 2.0 RDS(on) , Drain-to-Source On Resistance (Norm alized) ID = 75A VGS = 10V 1E-006 1E-005 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) 0.001 0.01 0.1 Therm al Response ( Z thJC ) 0.20 0.10 D = 0.50 0.02 0.01 0.05 SINGLE PULSE ( THERMAL RESPONSE ) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc

/G73/G82/G70/G49/G52/G48/G52/G90/G83/G95/G76 6 www.irf.com QG QGS QGD VG Charge D.U.T. VDS IDIG 3mA VGS .3μF 50KΩ .2μF12V Current Regulator Same Type as D.U.T. Current Sampling Resistors /G49/G48/G32/G86 Fig 13b. Gate Charge Test Circuit Fig 13a. Basic Gate Charge Waveform Fig 12c. Maximum Avalanche Energy Vs. Drain CurrentFig 12b. Unclamped Inductive Waveforms Fig 12a. Unclamped Inductive Test Circuit tp V(BR)DSS IAS Fig 14. Threshold Voltage Vs. Temperature RG IAS 0.01Ωtp D.U.T LVDS - VDD DRIVER A 15V 20VVGS 25 50 75 100 125 150 175 Starting TJ, Junction Temperature (°C) 100 200 300 400 500 600 EAS, Single Pulse Avalanche Energy (m J) /G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G73/G68 /G32/G84/G79/G80/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G51/G49/G65 /G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G53/G51/G65 /G66/G79/G84/G84/G79/G77/G32/G32/G32/G32/G55/G53/G65 -75 -50 -25 0 25 50 75 100 125 150 175 TJ , Temperature ( °C ) 1.0 2.0 3.0 4.0 VGS(th) Gate threshold Voltage (V) ID = 250μA

/G73/G82/G70/G49/G52/G48/G52/G90/G83/G95/G76 www.irf.com 7 Fig 15. Typical Avalanche Current Vs.Pulsewidth Fig 16. Maximum Avalanche Energy Vs. Temperature Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of T jmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asT jmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. I av = Allowable avalanche current. 7. ΔT = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 15, 16). tav = Average time in avalanche. D = Duty cycle in avalanche = tav ·f ZthJC(D, tav) = Transient thermal resistance, see figure 11) PD (ave) = 1/2 ( 1.3·BV·Iav) =/G32/G68T/ ZthJC Iav = 2/G68T/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav tav (sec) 100 1000 10000 Avalanche Current (A) 0.05 Duty Cycle = Single Pulse 0.10 Allowed avalanche Current vs avalanche pulsewidth, tav assuming Δ Tj = 25°C due to avalanche losses. Note: In no case should Tj be allowed to exceed Tjmax0.01 25 50 75 100 125 150 175 Starting TJ , Junction Temperature (°C) 100 200 300 400 EAR , Avalanche Energy (m TOP Single Pulse BOTTOM 10% Duty Cycle ID = 75A

/G73/G82/G70/G49/G52/G48/G52/G90/G83/G95/G76 8 www.irf.com Fig 17. /G80/G101/G97/G107/G32/G68/G105/G111/G100/G101/G32/G82/G101/G99/G111/G118/G101/G114/G121/G32/G100/G118/G47/G100/G116/G32/G84/G101/G115/G116/G32/G67/G105/G114/G99/G117/G105/G116/G32for N-Channel HEXFET/G174/G32Power MOSFETs /G67/G105/G114/G99/G117/G105/G116/G32/G76/G97/G121/G111/G117/G116/G32/G67/G111/G110/G115/G105/G100/G101/G114/G97/G116/G105/G111/G110/G115

• /G32/G76/G111/G119/G32/G83/G116/G114/G97/G121/G32/G73/G110/G100/G117/G99/G116/G97/G110/G99/G101 /G32/G32 • /G71/G114/G111/G117/G110/G100/G32/G80/G108/G97/G110/G101 /G32/G32 • /G76/G111/G119/G32/G76/G101/G97/G107/G97/G103/G101/G32/G73/G110/G100/G117/G99/G116/G97/G110/G99/G101 /G32/G32/G32/G32/G32/G32/G67/G117/G114/G114/G101/G110/G116/G32/G84/G114/G97/G110/G115/G102/G111/G114/G109/G101/G114 P.W. Period di/dt Diode Recovery dv/dt Ripple ≤ 5% Body Diode Forward Drop Re-Applied Voltage Reverse Recovery Current Body Diode Forward Current VGS=10V VDD ISD Driver Gate Drive D.U.T. ISD Waveform D.U.T. VDS Waveform Inductor Curent D = P.W . Period /G42/G32/G86/G71/G83/G32/G61/G32/G53/G86/G32/G102/G111/G114/G32/G76/G111/G103/G105/G99/G32/G76/G101/G118/G101/G108/G32/G68/G101/G118/G105/G99/G101/G115 /G42 /G131 /G132/G130 /G82/G71 /G86/G68/G68• /G100/G118/G47/G100/G116/G32/G99/G111/G110/G116/G114/G111/G108/G108/G101/G100/G32/G98/G121/G32/G82/G71
• /G68/G114/G105/G118/G101/G114/G32/G115/G97/G109/G101/G32/G116/G121/G112/G101/G32/G97/G115/G32/G68/G46/G85/G46/G84/G46
• /G73/G83/G68/G32/G99/G111/G110/G116/G114/G111/G108/G108/G101/G100/G32/G98/G121/G32/G68/G117/G116/G121/G32/G70/G97/G99/G116/G111/G114/G32/G34/G68/G34
• /G68/G46/G85/G46/G84/G46/G32/G45/G32/G68/G101/G118/G105/G99/G101/G32/G85/G110/G100/G101/G114/G32/G84/G101/G115/G116 /G68/G46/G85/G46/G84 /G129 VDS 90% 10% VGS td(on) tr td(off) tf /G86/G68/G83 /G80/G117/G108/G115/G101/G32/G87/G105/G100/G116/G104/G32≤ 1 /G181/G115 /G68/G117/G116/G121/G32/G70/G97/G99/G116/G111/G114/G32≤ 0.1 % /G82/G68 /G86/G71/G83 /G82/G71 /G68/G46/G85/G46/G84/G46 /G49/G48/G86 -/G86/G68/G68 Fig 18a. Switching Time Test Circuit Fig 18b. Switching Time Waveforms

/G73/G82/G70/G49/G52/G48/G52/G90/G83/G95/G76 www.irf.com 9 /G84/G79/G45/G50/G50/G48/G65/G66/G32 /G80/G97/G99/G107/G97/G103/G101/G32 /G79/G117/G116/G108/G105/G110/G101 Dimensions are shown in millimeters (inches) LEAD ASSIGNMENTS 1 - GATE 2 - DRAIN 3 - SOURCE 4 - DRAIN - B - 1.32 (.052) 1.22 (.048) 3X 0.55 (.022) 0.46 (.018) 2.92 (.115) 2.64 (.104) 4.69 (.185) 4.20 (.165) 3X 0.93 (.037) 0.69 (.027) 4.06 (.160) 3.55 (.140) 1.15 (.045) MIN 6.47 (.255) 6.10 (.240) 3.78 (.149) 3.54 (.139) - A - 10.54 (.415) 2.62 (.103) 15.24 (.600) 14.84 (.584) 14.09 (.555) 13.47 (.530) 3X 1.40 (.055) 1.15 (.045) 2.54 (.100) 0.36 (.014) M B A M 1 2 3 NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 2 CONTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS. /G84/G79/G45/G50/G50/G48/G65/G66/G32/G80/G97/G114/G116/G32/G77/G97/G114/G107/G105/G110/G103/G32/G73/G110/G102/G111/G114/G109/G97/G116/G105/G111/G110 EXA M PLE: IN THE A SSEM BLY LINE "C " THIS IS AN IRF1010 LOT CODE 1789 AS S EMBLED ON WW 19, 1997 PA RT NUMBER A SSEM BLY LO T C O DE DAT E CODE YEAR 7 = 1997 LINE C W EEK 19 LO G O REC TIFIER INTERNA TIONAL EXAMPLE: THIS IS AN IRF1010 LOT CODE 1789 AS S EMBLED ON WW 19, 1997 IN THE A SSEM BLY LINE "C " INTERNA TIONAL REC TIFIER LO G O LO T C O DE PA RT NUMBER DAT E CODE For GB Production Notes: 1. For an Automotive Qualified version of this part please see http://www.irf.com/product-info/datasheets/data/auirf1404z.pdf 2. For the most current drawing please refer to IR website at http://www.irf.com/package/

/G73/G82/G70/G49/G52/G48/G52/G90/G83/G95/G76 10 www.irf.com /G68/G50/G80/G97/G107/G32/G80/G97/G114/G116/G32/G77/G97/G114/G107/G105/G110/G103/G32/G73/G110/G102/G111/G114/G109/G97/G116/G105/G111/G110 /G68/G50/G80/G97/G107/G32/G80/G97/G99/G107/G97/G103/G101/G32/G79/G117/G116/G108/G105/G110/G101 Dimensions are shown in millimeters (inches) For GB Production F530S THIS IS AN IRF530S WITH LOT CODE 8024 ASSEMBLED ON WW 02, 2000 IN THE A SSEM BLY LIN E " L" A SSEM BLY LO T C O D E INTERNA TIO NA L REC TIFIER LO G O PART NUMBER DAT E CODE YEAR 0 = 2000 W EEK 02 LINE L DAT E CODE IN THE A SSEM BLY LIN E " L" ASSEMBLED ON WW 02, 2000 THIS IS A N IRF530S WITH LOT CODE 8024 INTERNA TIO NA L LO G O RECTIFIER LO T C O DE PA RT NUMBER F530S Notes: 1. For an Automotive Qualified version of this part please see http://www.irf.com/product-info/datasheets/data/auirf1404z.pdf 2. For the most current drawing please refer to IR website at http://www.irf.com/package/

/G73/G82/G70/G49/G52/G48/G52/G90/G83/G95/G76 www.irf.com 11 Dimensions are shown in millimeters (inches) TO-262 Part Marking Information EXAMPLE: THIS IS AN IRL3103L LOT CODE 1789 ASSEMBLY PART NUMBER DATE CODE WEEK 19 LINE C LOT CODE YEAR 7 = 1997 ASSEMBLED ON WW 19, 1997 IN THE ASSEMBLY LINE "C" LOGO RECTIFIER INTERNATIONAL /G32/G32/G32/G32/G32/G32/G32/G32/G32IGBT 1- GATE 2- COLLEC- TOR Notes: 1. For an Automotive Qualified version of this part please see http://www.irf.com/product-info/datasheets/data/auirf1404z.pdf 2. For the most current drawing please refer to IR website at http://www.irf.com/package/

/G73/G82/G70/G49/G52/G48/G52/G90/G83/G95/G76 12 www.irf.com IR WORLD HEADQUARTERS: 101N.Sepulveda Blvd, El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information . 10/2011 TO-220AB package is not recommended for Surface Mount Application. /G129/G32Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11). /G130 /G32Limited by TJmax, starting TJ = 25°C, L = 0.11mH RG = 25Ω, IAS = 75A, VGS =10V. Part not recommended for use above this value. /G131 Pulse width ≤ 1.0ms; duty cycle ≤ 2%. /G132 Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS . /G78/G111/G116/G101/G115/G58 /G133/G32Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. /G134/G32This value determined from sample failure population. 100% tested to this value in production. /G135 This is only applied to TO-220AB pakcage. /G136 This is applied to D2Pak, when mounted on 1" square PCB (FR- 4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994. /G68/G50/G80/G97/G107/G32/G84/G97/G112/G101/G32/G38/G32/G82/G101/G101/G108/G32/G73/G110/G102/G111/G114/G109/G97/G116/G105/G111/G110 TRR FEED DIRECTION 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) TRL FEED DIRECTION 10.90 (.429) 10.70 (.421) 16.10 (.634) 15.90 (.626) 1.75 (.069) 1.25 (.049) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 4.72 (.136) 4.52 (.178) 24.30 (.957) 23.90 (.941) 0.368 (.0145) 0.342 (.0135) 1.60 (.063) 1.50 (.059) 13.50 (.532) 12.80 (.504) 330.00 (14.173) MAX. 27.40 (1.079) 23.90 (.941) 60.00 (2.362) MIN. 30.40 (1.197) MAX. 26.40 (1.039) 24.40 (.961) NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site.