IRF1010E IRF | Alldatasheet
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HEXFET ® Power MOSFET 3/16/01 Parameter Typ. Max. Units R θJC Junction-to-Case ––– 0.75 R θCS Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W R θJA Junction-to-Ambient ––– 62 Thermal Resistance www.irf.com 1 VDSS = 60V R DS(on) = 12mΩ ID = 84A S D G TO-220AB Advanced HEXFET ® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated
Description
Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 84 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 59 A IDM Pulsed Drain Current 330 PD @T C = 25°C Power Dissipation 200 W Linear Derating Factor 1.4 W/°C VGS Gate-to-Source Voltage ± 20 V IAR Avalanche Current 50 A EAR Repetitive Avalanche Energy 17 mJ dv/dt Peak Diode Recovery dv/dt 4.0 V/ns TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)
2 www.irf.com S D G Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.3 V T J = 25°C, IS = 50A, VGS = 0V trr Reverse Recovery Time ––– 73 110 ns T J = 25°C, IF = 50A Q rr Reverse Recovery Charge ––– 220 330 nC di/dt = 100A/µs ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Source-Drain Ratings and Characteristics 84 330 A Starting TJ = 25°C, L = 260µH RG = 25Ω , IAS = 50A, VGS =10V (See Figure 12) Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11) Notes: ISD ≤ 50A, di/dt ≤ 230A/µs, VDD ≤ V(BR)DSS , TJ ≤ 175°C Pulse width ≤ 400µs; duty cycle ≤ 2%. This is a typical value at device destruction and represents operation outside rated limits. This is a calculated value limited to TJ = 175°C . Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A. Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 60 ––– ––– V V GS = 0V, ID = 250µA ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient –––0.064 ––– V/°C Reference to 25°C, ID = 1mA R DS(on) Static Drain-to-Source On-Resistance ––– ––– 12 m Ω VGS = 10V, ID = 50A VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V V DS = VGS , ID = 250µA gfs Forward Transconductance 69 ––– ––– S V DS = 25V, ID = 50A ––– ––– 25 µA VDS = 60V, VGS = 0V ––– ––– 250 V DS = 48V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 100 V GS = 20V Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -20V Q g Total Gate Charge ––– ––– 130 I D = 50A Q gs Gate-to-Source Charge ––– ––– 28 nC V DS = 48V Q gd Gate-to-Drain ("Miller") Charge ––– ––– 44 V GS = 10V, See Fig. 6 and 13 td(on) Turn-On Delay Time ––– 12 ––– V DD = 30V tr Rise Time ––– 78 ––– I D = 50A td(off) Turn-Off Delay Time ––– 48 ––– R G = 3.6Ω tf Fall Time ––– 53 ––– V GS = 10V, See Fig. 10 Between lead,––– ––– 6mm (0.25in.) from package and center of die contact C iss Input Capacitance ––– 3210 ––– V GS = 0V C oss Output Capacitance ––– 690 ––– V DS = 25V C rss Reverse Transfer Capacitance ––– 140 ––– pF ƒ = 1.0MHz, See Fig. 5 EAS Single Pulse Avalanche Energy ––– 1180 320 mJ I AS = 50A, L = 260µH nH Electrical Characteristics @ TJ = 25°C (unless otherwise specified) LD Internal Drain Inductance LS Internal Source Inductance ––– ––– S D G IGSS ns 4.5 7.5 IDSS Drain-to-Source Leakage Current
www.irf.com 3 Fig 4. Normalized On-Resistance Vs. Temperature Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics Fig 3. Typical Transfer Characteristics 100 1000 0.1 1 10 100 20µs PULSE WIDTH T = 25CJ ° TOP BOTTOM VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V V , Drain-to-Source Voltage (V) I , Drain-to-Source Current (A) DS D 4.5V 100 1000 0.1 1 10 100 20µs PULSE WIDTH T = 175CJ ° TOP BOTTOM VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V V , Drain-to-Source Voltage (V) I , Drain-to-Source Current (A) DS D 4.5V 100 1000 4 5 6 7 8 9 10 11 V = 25V 20µs PULSE WIDTH DS V , Gate-to-Source Voltage (V) I , Drain-to-Source Current (A) GS D T = 25 CJ ° T = 175 CJ ° -60 -40 -20 0 20 40 60 80 100 120 140 160 180 0.0 0.5 1.0 1.5 2.0 2.5 3.0 T , Junction Temperature( C) R , Drain-to-Source On Resistance (Normalized) J DS(on) V = I = GS D 10V 84A
4 www.irf.com Fig 8. Maximum Safe Operating Area Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 7. Typical Source-Drain Diode Forward Voltage 0 20 40 60 80 100 120 140 Q , Total Gate Charge (nC) V , Gate-to-Source Voltage (V) G GS FOR TEST CIRCUIT SEE FIGURE I =D 50A V = 12VDS V = 30VDS V = 48VDS 0.1 100 1000 V ,Source-to-Drain Voltage (V) I , Reverse Drain Current (A) SD SD V = 0 V GS T = 25 CJ ° T = 175 CJ ° 1 10 100 VDS , Drain-to-Source Voltage (V) 1000 2000 3000 4000 5000 6000 C, Capacitance(pF) Coss Crss Ciss VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd 1 10 100 1000 VDS , Drain-toSource Voltage (V) 100 1000 ID, Drain-to-Source Current (A) Tc = 25°C Tj = 175°C Single Pulse 1msec 10msec OPERATION IN THIS AREA LIMITED BY RDS (on) 100µsec
www.irf.com 5 Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case Fig 9. Maximum Drain Current Vs. Case Temperature VDS 90% 10% VGS td(on) tr td(off) tf VDS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % RD VGS R G D.U.T. VGS -VDD Fig 10a. Switching Time Test Circuit Fig 10b. Switching Time Waveforms 25 50 75 100 125 150 175 100 T , Case Temperature( C) I , Drain Current (A) D LIMITED BY PACKAGE 0.01 0.1 Notes: 1. Duty factor D =t / t 2. Peak T= P x Z + T 1 2 J DM thJC C P t t DM t , Rectangular Pulse Duration (sec) Thermal Response (Z ) thJC 0.01 0.02 0.05 0.10 0.20 D = 0.50 SINGLE PULSE (THERMAL RESPONSE)
6 www.irf.com Q G Q GS Q GD VG Charge D.U.T. VDS IDIG 3mA VGS .3µF 50KΩ .2µF12V Current Regulator Same Type as D.U.T. Current Sampling Resistors VGS Fig 13b. Gate Charge Test CircuitFig 13a. Basic Gate Charge Waveform Fig 12b. Unclamped Inductive Waveforms Fig 12a. Unclamped Inductive Test Circuit tp V (BR)DSS IAS Fig 12c. Maximum Avalanche Energy Vs. Drain Current 25 50 75 100 125 150 175 200 400 600 800 Starting T , Junction Temperature( C) E , Single Pulse Avalanche Energy (mJ) J AS ID TOP BOTTOM 20A 35A 50A R G IAS 0.01 Ωtp D.U.T LV DS - V DD DRIVER A 15V 20VVGS
www.irf.com 7 Peak Diode Recovery dv/dt Test Circuit P.W. Period di/dt Diode Recovery dv/dt Ripple ≤ 5% Body Diode Forward Drop Re-Applied Voltage Reverse Recovery Current Body Diode Forward Current VGS =10V VDD ISD Driver Gate Drive D.U.T. ISD Waveform D.U.T. VDS Waveform Inductor Curent D = P.W . Period R G VDD
- dv/dt controlled by RG
- ISD controlled by Duty Factor "D"
- D.U.T. - Device Under Test D.U.T* Circuit Layout Considerations
- Low Stray Inductance
- Ground Plane
- Low Leakage Inductance Current Transformer * Reverse Polarity of D.U.T for P-Channel VGS [ ] [ ] * VGS = 5.0V for Logic Level and 3V Drive Devices [ ] * Fig 14. For N-channel HEXFET ® power MOSFETs
8 www.irf.com LEAD ASSI GNMENTS 1 - GATE 2 - DRAIN 3 - SOU RC E 4 - DRAIN - B - 1.32 (.052) 1.22 (.048) 3X 0.55 (.022) 0.46 (.018) 2.92 (.115) 2.64 (.104) 4.69 (.185) 4.20 (.165) 3X 0.93 (.037) 0.69 (.027) 4.06 (.160) 3.55 (.140) 1.15 (.045) M IN 6.47 (.255) 6.10 (.240) 3. 78 (.149) 3. 54 (.139) - A - 10.54 (.415) 2.62 (.103) 15.24 (.600) 14.84 (.584) 14.09 (.555) 13.47 (.530) 3X 1. 40 (. 055) 1. 15 (. 045) 2.54 (.100) 0.36 (.014) M B A M 1 2 3 NOTES: 1 D IM E N S IO N IN G & TO L E R A N C ING P E R A N S I Y 1 4.5M , 1 9 82. 3 O U T LIN E C O N F O R M S TO JE D E C O U T LIN E TO -2 20 A B . 2 CONTROLLI NG DI MENSI ON : I NCH 4 HEATSI NK & LEAD MEASUREMENTS DO NOT I NCLUDE BURRS. Part Marking Information TO-220AB Package Outline TO-220AB Dimensions are shown in millimeters (inches) PART NUMBERINTERNATIONAL RECTIFIER LOGO EXAMPLE : THIS IS AN IRF1010 W ITH ASSEMBLY LOT CODE 9B1M ASSEMBLY LOT CO DE DATE CODE ( Y Y WW) YY = YEAR WW = WEE K 9246 IRF1010 9B 1M A Data and specifications subject to change without notice. This product has been designed and qualified for the automotive [Q101] market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 3/01