F100371 NSC | Alldatasheet
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° ba . = ZANational wore | Semiconductor @ N F100371 5 Low Power Triple 4-Input Multiplexer with Enable = vu General Description Features 2 The F100371 contains three 4-input multiplexers which ™ 35% power reduction of the F100171 oO share a common decoder (inputs Sp and S;). Output buffer ™ 2000V ESD protection 4 gates provide true and complement outputs. A HIGH on the ~~ Pin/function compatible with F100171 — Enable input (E) forces all true outputs LOW (see Truth Ta- wm Voltage compensated operating range = -4.2V to | = ble). All inputs have 50 k. pull-down resistors. —5.7V Bo} . Ss Logic Symbol Zs c - [“Pinviames | bescipton || — he Isa LT 1c hae & Hon Ira tae Ise lov ti ta fa loc he bac Ise lox-lax. Date Inputs c s So, S4 Select Inputs =4 " a om E Enable Input (Active LOW) st 99 o 0) Za-Ze Data Outputs @ Za-Zo Complementary Data Outputs a TLF/10088-1 = Connection Diagrams > m 24-Pin DIP 24-Pin Quad Cerpak 28-Pin PCC FA ar, hy foo & Yer $1 Sp ‘selon aes tn Za Za o he! 2h Io. fof fofafalay) = ley 2 23 ls, 24 23 22 21 20 19 i) Igo] 3 2b Ui 18 bse %)@ 2 * ne t 2 Td od? 58 a Z.-44 21th, ‘sb le z I 3 161 Ver Yeca 2-45 20 Fo» loe he Vers DV Voo—q6 19 E hes 15 Flog (a) Voc Veca]7 18F-Veg he 5 140 Zq top iz, 4-48 17Bs, Ise 8 13h 2, pS Ze Z, 9 16Fsp 7.8 9 10 11 12 ° T 7 @ Ez] 10 i ay Ze Ze VecVecaZs 2» 'ab bsp locVeES te !2e !e ote BD 4 le TL/F/10048-3 TL/F/10148-4 loa 12 BR he TUF /10048-2 ©1990 National Semiconductor Corporation TL/F/10148 | RIRD-B20MEO/Printed in U.S.A.
E te tee te toc tab tae te toe tan tans Ite bon SSH y, SHS SSE | A 0 A 0 0 TE et ¥ ¥ Vy, Ze Ze 2p Zp ZaZe TUF/10148-5 Truth Table L L L lox L H L hx L L H lox L H H 3x H x x L H = HIGH Voltage Level L = LOW Voltage Level X = Don't Care
Absolute Maximum Ratings Recommended Operating Above which the useful life may be impaired. (Note 1) Conditions If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Case Temperature (Tc) o°Cto 485°C OMrce/ Distributors for availability and specifications, Military — 55°C to + 125°C Storage ‘emperature (Tstq) —65°C to + 150°C. Supply Voltage (Vee) Maximum Junction Temperature (Ty) Commercial 5.7V to —4.2V Ceramic +175°C Military —5.7V to —4.2V Plastic + 150°C Vee Pin Potential to Ground Pin 7.0V to +0.5V input Voltage (DC) Veg to +0.5V Output current (DC Output HIGH) —50 mA ESD (Note 2) 22000V Commercial Version Vee = —4.2V to —5.7V, Voc = Voca = GND, To = 0°C to +85°C (Note 3) Vox Output HIGH Voltage | -1025 | -955 | -870 | mv_| Vin=Vin(Max) | Loadingwith Vox OutputHIGH Voltage | -1035 [| | | mV_| Vin = Vin (Min) | Loadingwith Vie Input HIGH Voltage 1465 270 mV Guaranteed HIGH Signal for All Inputs. Vit Input LOW Voltage 4475 mv Guaranteed LOW Signal for All Inputs im Input HIGH Current lox-l3x. 340 A Vin = Vin (Max) So, $1,E 300 lee Power Supply Curent | -75 | | -39 | ma Inputs Open Note 1: Absolute maximum ratings are those values beyond which the device may be damaged or have its useful life impaired. Functional operation under these conditions is not implied. Note 2: ESD testing conforms to MIL-STD-883, Method 3015. Note 3: The specified limits represent the "worst case” value for the parameter. Since these values normally occur at the temperature extremes, additional noise immunity and guardbanding can be achieved by decreasing the allowable system operating ranges. Conditions for testing shown in the tables are chosen to guarantee operation under “worst case” conditions.
Commercial Version (continued) Ceramic Dual-In-Line Package AC Electrical Characteristics Vee = —4.2V to —5.7V, Voc = Voca = GND teLH Propagation Delay 0.45 180 0.45 1.60 tPHL lox-l3x to Output ° ° ° ° teLH Propagation Delay Figures 1 and 2 ‘Pu Propagation Delay 065 230 | 065 230 | 075 240 teHL E to Output ” : ” : 7 tTLH Transition Time . tra 20% to 80%, 80% to 20% 0.35 1.20 0.35 1.20 Figures 1 and 2 Note 1: The propagation delay specified is for single output switching. Delays may vary up to 300 ps with multiple outputs switching. PCC and Cerpak AC Electrical Characteristics Vee = —4.2V to —5.7V, Voc = Voca = GND teLH Propagation Delay teu lox=I3x to Output 0.45 1.30 0.45 1.40 teu Propagation Delay Figures 1 and 2 teLH Propagation Delay tTLH Transition Time , tr 20% to 80%, 80% to 20% 0.35, 4.10 0.35 1.10 Figures 1 and 2 ts,6-G Skew, Gate to Gate Te Tep TBO PCC Only (Note 1) Note 1: Gate to gate skew is defined as the difference in propagation delays between each of the outputs. Note 2: The propagation delay specified is for single output switching. Delays may vary up to 300 ps with multiple outputs switching.
Military Version - Preliminary Vee = —4.2V to —5.7V, Voc = Voca = GND, To = —55°C to + 125°C Vou Output HIGH Voltage | _ _ °C to 1025 870 | mv | ec Vou Output LOW Voltage 1620 | mv | Octo. | Mt ain 50M to —2.0V + 125°C Vouc Output HIGH Voltage mV OC to + 125°C Voic Output LOW Voltage 1610 | mv OC to or Vit (Max) 502 to —2.0V +125°C Vin Input HIGH Voltage _ _ —568°C to | Guaranteed HIGH Signal . 1165 | -870 | mV | Ly25%C | for All Inputs 1,2,3,4 Vi Input LOW Voltage _ _ —55°C to | Guaranteed LOW Signal 1830 1475 mv +125°C for All Inputs 12,34 Ie Input LOW Current nA | ~55°Cto | Veg = —4.2V 1.2.4 +125°C_ | Vin = Vit (Min) es tia Input HIGH Current tox-lax 340 A OC to So, S1,E 300 +125°C | Veg = -5.7V 123 lox—lax 490 A a Vin = Vin (Max) So, $1, E 450 M lee Power Supply Current —55°C to mA + 125°C Inputs Open 1,2,3 Note 1: F100K 300 Series cold temperature testing is performed by temperature soaking (to guarantee junction temperature equals —55°C), then testing immediately without allowing for the junction temperature to stabilize due to heat dissapation after power-up. This provides “cold start specs which can be considered a worst case condition at cold temperatures. Note 2: Screen tested 100% on each device at —55°C, +25°C, and + 125°C, Subgroups 1, 2, 3, 7, and 8. Note 3: Sample tested (Method 5005, Table !) on each manufactured lot at — 55°C, + 25°C, and + 125°C, Subgroups 1, 2, 3, 7, and 8. Note 4: Guaranteed by applying specified input condition and testing Vou/VoL.
Military Version - Preliminary (continues) Ceramic Dual-In-Line Package AC Electrical Characteristics Vee = —4.2V to —5.7V, Voc = Voca = GND Smee | rramewr [Reese] = [i Max | ax —_s = Lime | conto | noe ty Propagation Delay 030 190 | 040 1.70 | 0.30 2.00 tPHL lox—Igx to Output Neat Cropagation Detey 040 270 | 060 240 | 050 290 | | 4,2,3,5 PHL oS p Figures 1 and 2 ter | Propagation Delay = . .f Al . 4 trun | Transition Time tTHL 20% to 80%, 80% to 20% | %20 1.60 | 0.90 50 | 0.20 1.60 4 Cerpak AC Electrical Characteristics Vee = —4.2V to —5.7V, Voc = Voca = GND teHL lox-lgx to Output Nad Cropagation Detey 040 270 | 060 240] 050 290 | | 1,2,3,5 PHL 1 ms Figures 1 and 2 tpun | Propagation Delay 0.50 270 | 060 240 | 050 290 tPHL E to Output trun | Transition Time i c 0.20 A tru | 20% to. 80%, 80% to. 20% | 220 1-60 60 4 Note 1: F100K 300 Series cold temperature testing is performed by temperature soaking (to guarantee junction temperature equals — 55°C), then testing immediately after power-up. This provides “cold start” specs which can be considered a worst case condition at cold temperatures. Note 2: Screen tested 100% on each device at + 25°C temperature only, Subgroup A9. Note 3: Sample tested (Method 5005, Table 1) on each mfg. lot at + 25°C, Subgroup A9, and at + 125°C and —55°C temperatures, ‘Subgroups A10 and A11 Note 4: Not tested at + 25°C, + 125°C and - 55°C temperature (design characterization data). Note 5: The propagation delay specified is for single output switching. Delays may vary up to 300 ps with multiple outputs switching.
04 LE ~ PULSE
FIGURE 1. AC Test Circuit FIGURE 2. Propagation Delay and Transition Times
Ordering Information
The device number is used to form part of a simplified purchasing code where the package type and temperature range are defined as follows:
100371 D C QR
Device Type (Basic) a Lt Special Variations QR = Commercial Grade device Package Code with burn-in D = Ceramic Dual-in-Line QB = Military grade device with F = QuadCerpak environmental and burn-in Q = Plastic Leaded Chip Carrier (PCC) processing. Temperature Range C = Commercial (0°C to +85°C) M = Military (— 55°C to + 125°C)
Physical Dimensions inches (mitimeters) 1.215 ~ (90.86) 0.025 MAK 0,030 — 0.055 RAD { ba [e3) fez] fei) feo] fro] fre) fr7) (re) fis) fa) fed RAO TYP 0.390 1) GLASS 1) MAX Teo ww wwe ph eq 01087 0.005 aun | r anil (rsereo.ten .020 0.070 ‘ia all iasr2) IN (0.508 — 1.778) MAX 0.205, 6.715) + WAX —__¥ we _ mi YP > 0-203 0.305) 0.055 amcene | sons || ae | 0.485 + 0.050 | " (397) (2.540 0.254) (0-457 +0.076) San aaaeatemy MAX Tye TYP OTH ENDS 6 19606) 24-Lead Ceramic Dual-In-Line Package (D)
6 SPaces ay
0.080, 3.302} | on nom [. PEDESTAL ei caaatss , | Vas ‘6 SPACES AT dq =s 0.050 say = ze aay ea (2m) a TS ey NOM SQUARE be Og a. Ngee 0.045, 218 8.045 ewe TS ewe xa xs" 0.410—0.430 ‘SQUARE (CONTACT DIMENSION) 9.020, 0.013-0.018 oar MN WP armas) (0.127—0.381) | FIN MO. 1 0.026 — 0.032 = | (DENT (0.660—0.813) Par | 0.40 id | 43) ‘REF SQ 0.435 0.495 (12.82—12.57) we VIHA (REV G} ‘Note: Pedestal as shown on base is not available for F100K ECL products. 28-Lead Plastic Chip Carrier (Q)
o 2 Physical Dimensions inches (millimeters) (Continued) Lit. # 114926 c 0.370 0.004 —0.006 wi 0.250 -0.360 (9398) 0.250 0.360 > “(0 102-0152) £ TYP TYP f h oO PIN NO. 1 x —\\ 2 24-23-22 21 20 19 ~ 78 91112 Ss Qa t 0.075 (1.905) 2 aPLcs a 0.016-0.018 MAX 0.035 ~ 0.050 i TP —e 0.400 TYP 12.199) Ly (10.16) MAX o SQUARE MAX = GLASS 4 wa4e ey 6) 24-Lead Ceramic Flatpak (F) r nw o So So wu LIFE SUPPORT POLICY NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant support device or system whose failure to perform can into the body, or (b) support or sustain life, and whose be reasonably expected to cause the failure of the life failure to perform, when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can effectiveness. be reasonably expected to result in a significant injury - / to the user. * . Se YF) National Semiconductor National Semiconductor National Semiconductor National Semiconductor National Semicondutores National Semiconductor Corporation Gmbtt Japan Li Hong Kong Lia. Do Breall Ltda. (Austrata) PTY, Li. 2900 Semconductor Ove incustiestrasso 10 Sansoido Big. SF Suite 519, 5th Floor Av. Bog. Fana Lima, 1383 1st Poor, 441 St Kikda Re. 0. Box 58090 0.2080 Furstonoldbuck 4:15 Nahi Shinju Ctunachor Golden Plaza, {6.0 Andor-Conj. 62 Motboume, 2004 Santa Clara CA 95052-8000 West Germany ‘Shinju, 77 Mody load, Tsmshatsui East, 01451 Sao Pauo, SP, Brasil Victory, Austaka Tot (409) 721-5000 Tob (0-81-41) 109-0 Tokyo 160, Japan Kowoon, Hong Kong Tol (5/11) 212-5068 Tek (08) 267-5000 TWX: (910) 399-0240 “olex: 527-649 Tob 9.299-7001, Tet 3.729200 Fax (85/41) 211-1181 NSBR BR Fax: 619-2677458 Fax (08141) 109554 FAX: 9.299-7000 Tolex: 52096 NSSEA HX Fax 33112596 National doesnot assume any responsibly fr use of any orcurty described. no orci pant icanses are pad and Nationa reserves the nigh at ary me without notice to change said crcutry and specications,