F100322

F100322 NSC | Alldatasheet

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in| = —_ National February 1990 | © ry f—] Semiconductor @ ND LX} F100322 5 . ° Low Power 9-Bit Buffer = vu General Description Features: g The F100322 is a monolithic 9-bit buffer. The device con- ® 30% power reduction of the F100122 oO tains nine non-inverting buffer gates with single input and ™ 2000V ESD protection 4 output. All inputs have 50 kQ pull-down resistors and all ™ Pin/function compatible with F100122 o outputs are buffered. ™ Voltage compensated operating range = —4.2V to o -5.7V D4 a be) i<j i o Logic Symbol g »—Dp— [_Pinnames | Description bs > Oo Dy, Dg Data Inputs 01,09 Data Outputs 0; —>——-6, %& —p— o, —>—-o, TUF/s0608-1 Connection Diagrams 24-Pin DIP 28-Pin PCC 24-Pin Quad Cerpak Ww 5 D,YooA¥ers%4 95 Og Dy Dg VocaVer O7 Dg Voca4! 240s fcofcoferfeafeaycaf Os-42 23h, (DD) On 24 23 22 21 20 19 0.43 22-0, LazP.| mae 4! 18} Ds 0,44 21bb, aa I % 0,42 7h, hee Yee 0543 18} Vocy O45 20f-Dg Vers © OM C1 Yee ee 19}-Voca Voca © MGB Vc, © Vota} 4 157-04 Voaq7 18E-Ve O52 210, O35 147 Os, ode ho, Dg i Bo, o,-46 13 06 ~ s CO 7 8 9 10 11 12 ons 165 Ps 130 2 a BS ea 0,410 15-05 Dy Dy Ds VepsVoe405 Op 0} 0p Voc Vea O7 Os—qit 14-0, TL/F/10608-4 TL/F/10608-3 O12 13F-Vocy TL/F/10608-2 © 1990 Natonal Semiconductor Corporation TL/F/10608 1 RRD-B20M20/Prntedin U.S.A

Absolute Maximum Ratings Output Current (DC Output HIGH) —50 mA Above which the useful life may be impaired. (Note 1) ESD (Note 2) 22000V if Military/Aerospace specified devices are required, . please contact the National Semiconductor Sales Recommended Operating Office/Distributors for availability and specifications. Conditions Storage Temperature (TsTq) 65°C to + 150°C Case Temperature (To) Maximum Junction Temperature (Ty) Commercial O°C to + 85°C Ceramic +175°C Military —55°C to + 125°C Plastic + 150°C Supply Voltage (Vee) Vee Pin Potential to Ground Pin —7.0V to +0.5V Commercial —5.7V to —4.2V Input Voltage (DC) Veg to +.0.5V Military —5.7V to —4.2V Commercial Version Vee = —4.2V to —5.7V, Voc = Voca = GND, To = 0°C to + 85°C (Note 3) Vou Output HIGH Voltage to2s | -955 | -e70 | 1, | Vin=Vunaman | Loading with Vou Output LOW Voltage 1705 | -1620 | or Vin iy 509 to ~2.0V Vouc OutpurHicHvotage | -1095 | | || Vin = Vinny | Loading with Vouc Output Low Voltage | | «| —t610 or Vin (Max) 509 to —2.0V Vin Input HIGH Voltage 1165 ~870 mv Guaranteed HIGH Signal for All Inputs Vit Input LOW Voltage — 4830 4475 mv Guaranteed LOW Signal for All Inputs lee Power Supply Curent | -65 | | 30 | ma_| inputs Open Note 1: Absolute maximum ratings are those values beyond which the device may be damaged or have its useful life impaired. Functional operation under these conditions is not implied. Note 2: ESD testing conforms to MIL-STD-883, Method 3015. Note 3: The specified limits represent the “worst case” value for the parameter. Since these values normally occur at the temperature extremes, additional noise immunity and guardbanding can be achieved by decreasing the allowable system operating ranges. Conditions for testing shown in the tables are chosen to <quarantee operation under “worst case” conditions. Ceramic Dual-In-Line Package AC Electrical Characteristics Vee = —4.2V to —5.7V, Voc = Voca = GND tPLH Propagation Delay 4 14 Figures 1 and 2 ttl Transition Time Figures 1 and 2 Note 1: The propagation delay specified is for single output switching. Delays may vary up to 200 ps with multiple outputs switching. PCC and Cerpak AC Electrical Characteristics Vee = —4.2V to —5.7V, Voc = Voca = GND tein _| Propagation Delay Figures 1 and 2 0.45 1.25 .4! E “ tou Data to Output 0.45 1.25 0.45 1.35 (Note 2) tru | Transition Time tsc0 |Skew.Gatetocate | tao | tao | ta | ps | PC Oniy Note) Note 1: Gate to gate skew is defined as the difference in propagation delays between each of the outputs. Note 2: The propagation delay specified is for single output switching. Delays may vary up to 200 ps with multiple outputs switching.

Military Version—Preliminary Ver = —4.2V to —5.7V, Voc = Voca = GND, To = 0°C to +85°C Von | Output HIGH Voltage | — 1025 OC to + 125°C orV 502 to —2.0V 1.23 Vor Output LOW Voltage OC to + 125°C IL (Min) : Vouc | OutputHIGH Voltage | -10395[ | mv | orcto +126°C Voc | Output LOW Voltage [| 1610 O°Cto +125°C | OF VIL (Min) oe [fs | wv [ase Via Input HIGH Voltage | _ 1166 | a7 | mv | —ssCto + 125° | Guaranteed HIGH Signal 1.2.3.4 for All Inputs iT u Vit InputHIGH Voltage | _ yay | 4475 | mv | —sscto + 128°C | Guaranteed LOW Signal 12.34 for All Inputs I Input LOW Current ua | —ss:cto +125 | Yee = ~42V 1.23 Vin = Vit (Min) lee Power Supply Current | —70 = 55°C to + 125°C | Inputs Open 1,2,3 Note 1: F100K 300 Series cold temperature testing is performed by temperature soaking (to guarantee junction temperature equals — 55°C), then testing immediately without allowing for the junction temperature to stabilize due to heal dissipation after power-up. This provides “cold start” specs which can be considered a worst case condition at cold temperatures. Note 2: Screen tested 100% on each device at - 55°C, + 25°C, and + 125°C, Subgroups 1, 2, 3, 7, and 8. Note 3: Sample tested (Method 5005, Table |!) on each manufactured lot at — 55°C, + 25°C, and + 125°C, Subgroups At, 2, 3, 7, and 8. Note 4: Guaranteed by applying specified input condition and testing Vow/Vou. Ceramic Dual-In-Line Package AC Electrical Characteristics Vee = —4.2V to —5.7V, Voc = Voca = GND Pr ti iF {Pun | Propagation Delay 030 180 | 040 160 | 040 1.80 | os | 1,2,3,5 PL Pp Figures 1 and 2| tH | Transition Time TH Joe to 80%, 80% to.20%/ 290 120 | 030 120 | 090 1.20 4 Cerpak AC Electrical Characteristics Vee = —4.2V to ~5.7V, Voc = Voca = GND {Pun | Propagation clay 030 180 | 040 160 | 040 1.80 | os | 4,2,3,5 PHL p Figures 1 and 2 — | trun | Transition Time TM | ome to 80% 80% to 20% 980 120 | 030 120 | 030 1.20 4 Note 1: F100K 300 Series cold temperature testing is performed by temperature soaking (lo guarantee junction temperature equals —55°C), then testing immediately after power-up. This provides ‘cold start" specs which can be considered a worst case condition at cold temperatures. Note 2: Screen tested 100% on each device at 25°C, only Subgroup AS Note 3: Sample tested (Method 5005, Table I) on each manufactured lot at + 25°C, Subgroup A9, and at + 125°C and —55°C temperatures, Subgroups A10 and at Note 4: Not tested at +25°C, + 125°C, and ~ 55°C temperature (design characterization data) Note 5: The propagation delay specified is for single output switching. Delays may vary up to 200 ps with multiple outputs switching

u ry SCOPE Veo vo CHAN A 01 WF Notes: L Rr Voc, Voca = +2V. Vee = ~2.5V Li and L2 = equal length 502 impedance lines ae an Rr = 502 terminator internal to scope - = Decoupling 0.1 uF from GND to Voc and Vee 2 All unused outputs are loaded with 509. to GND PULSE a circuit] >, ‘SCOPE CC. = Fixture and stray capacitance < 3 pF GENERATOR] 17 uneR TT CHAN B I Tgn Vee TOUR TLF/10608-5 FIGURE 1. AC Test Circuit FIGURE 2. Propagation Delay and Transition Times

Ordering Information

The device number is used to form part of a simplified purchasing code where a package type and temperature range are defined as follows:

100322 D C QR

Device Type (basic) ee tL Special Variations QR = Commercial grade device Package Code with burn-in. D = Ceramic DIP QB = Military grade grade device F = Quad Cerpak with environmental and burn- Q = Plastic Leaded Chip Carrier (PCC) in processing. Temperature Range C = Commercial (0°C to +85°C) M = Military (—55°C to + 125°C)

Physical Dimensions inches (millimeters) 1.215 (30.86) 0.025 MAX 0.030—0.055 RAD | fa [23) fez) 2x) feo) fro} fre) fiz) fre) fs] fra) fea RAD TYP A\\) bh 8) 0.370 MAX (9.388) cuss ) “x WT Bw ty LT te to hy 0.037 + 0.005 MIN (0.508 — 1.778) MAX |_* 0.235 (6715) + MAX —_¥ 06° 94° ‘ese 45° 0.008 -0.012 TYP | We (0.203 — 0.305) 0.125 WP MAX YP we BOTH EBS J246 (ENG) 24-Lead Ceramic Dual-In-Line Package (0.400” Wide) (D) 0.370 0.004 0.006 — wo {esso—9.144) | _ MIN SQUARE 16.350 9.144) we TYP PIN NO. 1 | = } (24 25 22-20-20 19) Creamy 0.075 | 905) |

8 PLCS

0.016 -0.018 MAX | 0.035 — 0.050 " Wao 0.085, 0.400 We 2.159) 110.16) MAX SQUARE MAX GLASS, 24-Lead Ceramic Flatpak (F)

= | Physical Dimensions inches (mitimeters) (Continued) Lit. # 114907 4 6 SPACES AT a Lue = (1270) 0.130 oa | NOM - 15 PEDESTAL g Bivlelelelelelen L, BOW & Sspcesat = Ly | ch 0.326 4 O00 ak Shee (6.700) alae (1.270) ao) ry NOM SQUARE > ae Or ro) 4, NIG 4 aos STs ous |= (1.143) (1.143) Nn x 1 N foe] 0.410 -0.430 So (10.41 10.82} o ‘SQUARE - (CONTACT DIMENSION) L 0.020 0.013-0.018 0.005 — 0.015 —~ (0.127 -0.381) pn wo.s 4 0.026 - 0.032 F arosnous 0.450 id ne REF 50 0.485 — 0.495 (12.32 - 12.57) ‘SQUARE ae nevo) 28-Lead Plastic Chip Carrier (Q) LIFE SUPPORT POLICY NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant support device or system whose failure to perform can into the body, or (b) support or sustain life, and whose be reasonably expected to cause the failure of the life failure to perform, when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can effectiveness. be reasonably expected to result in a significant injury . J to the user. he - - ZA National Semiconductor National Semiconductor NS Japan Ltd. National Semiconductor, National Semicondutores ‘National Semiconductor Corporation Gmort Senseo 819. 5F Hong Kong Lid Do Gran Lisa. (Austral) PTY, Lia. 2000 Semiconductor Orv —_Industnestvasse 10 415 Nish Shnjisu Sula 519,80 Foor ‘kv Brg Fana Um, 1963 ‘st Foor, 643 Si Kida Rs 7. Box 58090, 0.8000 Fustenotrick Shinuaurku Ghinacham Golden Plaza, 80 Andor-Con 62 Metboure, 9004 Sania Cara, CA 95052-9000 West Germany Tokyo 160, Japan 77 Mody Road, Tsmshatau East, 01451 Sao Paulo, SP. Oras Vicon. Austral Tet (40a) 731-5000 Yor (ost) 1000 Toe'3290-7001. Kowloon, Hong Kong Tot (65/11) 212 5066 “et (03) 267-5000 TWX (10) 938-9240 Toles 527-649 FAX 9:200-700 Tel 37291290, Fax (85/11) 210-1181 NSBR BR Fax: 61-3:2677458 Fax (08141) 103554 Telex 52996 NSSEA HX Fax: 9:3112596 National doesnot assume any responsbilty or use ol any crcutry described, no crc petanteenses are imped and Natonal reserves the ight a anytime who notice to change said out and spcticaons