F08S60S THINKISEMI | Alldatasheet

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8Ampere,600Volt Single Surface Mount Type Stealth2 Fast Recovery Diode © 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 1/3 Pb Rev.09T Unit : inch (mm) TO-252/DPAK .225(5.7) .209(5.3) .106(2.7) .090(2.3) .09 (2.3) .09 (2.3) .032(0.8) .012(0.3) .02(.5) .071(1.8) .051(1.3) .040(1.0) MIN. .264(6.7) .248(6.3) .216(5.5) .200(5.1) .063(1.6) .047(1.2) .098(2.5) .082(2.1) .024(0.6) .016(0.4)

  • Ultrafast Recovery Time
  • Soft Recovery Characteristics
  • Low Recovery Loss
  • Low Forward Voltage
  • High Surge Current Capability
  • Low Leakage Current APPLICATION Freewheeling, Snubber, Clamp Inversion Welder PFC Plating Power Supply Ultrasonic Cleaner and Welder Converter & Chopper UPS PRODUCT FEATURE Internal Configuration Base Backside GENERAL DESCRIPTION F08S60S using the lastest FRED FAB process(or planar passivation pellet) with ultrafast and soft recovery characteristics. Absolute Maximum Ratings T C = 25°C unless otherwise noted Thermal Characteristics T C = 25°C unless otherwise noted Symbol Parameter Ratings Units V RRM Peak Repetitive Reverse Voltage 600 V V RWM Working Peak Reverse Voltage 600 V V R DC Blocking Voltage 600 V I F(AV) Average Rectified Forward Current @ T C = 115 o C 8 A I FSM Non-repetitive Peak Surge Current 60Hz Single Half-Sine Wave 80 A T J , T STG Operating Junction and Storage Temperature -65 to + 150 o C R θJC Maximum Thermal Resistance, Junction to Case 3.0 o C/W

Electrical Characteristics

T C = 25°C unless otherwise noted 1. Pulse : Test Pulse width = 300us, Duty Cycle = 2% Parameter Test Conditions Min Typ Max Units V FM I F = 8A, I F = 8A T C = 25°C T C = 125°C 2.1 1.6 2.6 - V I RM V R = 600V, V R = 600V T C = 25°C - 100 500 µAT C = 125°C t rr I F = 1A, di/dt = 100A/s, V R = 30V T C = 25°C - - 25 ns t rr I F = 8A, di/dt = 200A/s, V R = 390V T C = 25°C -1 9 3 0 n s I rr -2 . 2- A S factor -0 . 6- Q rr -2 1-n C t rr I F = 8A, di/dt = 200A/s, V R = 390V T C = 125°C -5 8-n s I rr -4 . 3- A S factor 1.3 Q rr - 125 - nC W AVL Avalanche Energy (L = 40mH) 20 - - mJ Notes:

© 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 3/3Rev.09T F08S60S