F08A05 MOSPEC | Alldatasheet
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4a MOSPEC FOBAOS thru FO8A20 ES Fast Recovery Rectifier Diodes FAST RECOVERY ... Designed for use in switching power supplies. inverters and RECTIFIERS as free wheeling diodes. These state-of-the-art devices have the following features: 8 AMPERES 50 -- 200 VOLTS * Glass Passivated chip junctions * Low Reverse Leakage Current * Fast Switching for High Efficiency * 150°C Operating Junction Temperature * Low Forward Voltage , High Current Capability * Plastic Material used Carries Underwriters Laboratory Flammability Classification 94V-O a> MAXIMUM RATINGS TO-220A Characteristic Symbol Fo8A in| 5 wh c Peak Repetitive Reverse Voltage Varn — A * Working Peak Reverse Voltage Vewm 50 150 200 Vv DC Blocking Voltage Ve bot By gp Non-Repetitive Peak Surge Current A . ( Surge applied at rate load conditions halfware,single phase,60Hz ) 150 [| min | MAX | A 14.68 15.32 Operating and Storage Junction Ty. Totg °c B 9.78 10.42 Temperature Range - 65 to + 150 c 6.01 6.52 D 13.06 14.62 E 3.57 4.07 F 4.83 5.33 G 1.12 1.36 H 0.72 0.96 ELECTRICAL CHARACTERISTICS I 4.22 4.98 J 1.14 1.36 Characteristic FO8A kK 2.20 297 L 0.33 0.55 Maximum Instantaneous Forward Voltage Ve Vv 5 3 Ps 400 Maximum Instantaneous Reverse Current uA 1 ( Rated DC Voltage, T, = 25 °c) 10 so tie Case ose ( Rated DC Voltage, T. = 100 °C) 500 CASE Suffix "P (hs0S AI =O Ar Pe [iw | Cr R La ) sow te. Case Negative} Typical Junction Capacitance Cc, pF 3 CASE Suffix"R" ( Reverse Voltage of 4 volts & f=1 MHz) 120
FIG-1 TYPICAL FORWARD CHARACTERISTICS: FIG-3 FORWARD CURRENT DERATING CURVE F z0 So i TT NI | | § oe eA
5 SSS SS SS SS SS SS SSS SSS Fa |
= es A a 2 INS] | B GOO i: =e ———— é 4 [I N a i 2% re g A eallLVITITTTTtTT tt cose eerie 6) 5 te 16 08 1 12 14 is veo _FIC-A TYPICAL JUNCTION CAPACITANCE i FORWARD VOLTAGE ts) a € SS ees slemmniill * FIG-2 TYPICAL REVERSE CHARACTERISTICS _ } ESS _——— 5 ERATE _ oo 5 } | — TTT a 3 LTH Ul z == = 0 — or ne £ SE | ee) ee a REVERSE VOLTAGE (ots) & SS SS SS Se FIG-5 PEAK FORWARD SURGE CURRENT a LS SS SS ca | 190 Tr 3 ot a BSH +H nae tl 2 ee oe 2 0 20 40 60 go 100120140 5 [yy Hii =U - 8 of | iit | | | rr PERCENT OF PEAK REVERSE VOLTAGE(%) 3 een een £ eee eeu ey 1 Err e 5 10 Cr) : NUMBER OF CYOLES AT 6oHz
600 NI 100 NI —_
Tee, VEE woes ww AAT | TI 41.Rige Time = 7 ns max. Input impedance =1 M 0,22 pF 2. Rise Time = 10 ng max. Input Impedance = 50.0 Set time base for 50 nsidv Fig-6 Reverse Recovery Time Characteristic and Test Circuit Diagram