F0810 ETC1
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‘TAG SEMICONDUCTORS LTD FO810BH -— : FO810NH FAST SCR’S 8.0A 200-800V 10-25mA : The FO810 series silicon controlled Se rectifiers are fast, gold doped, glass GE fe passivated PNPN devices. These parts are intended for general purpose pe WN high speed applications. o~ : TO 220 cf Absolute Maximum Ratings _Ta= 26°C unless otherwise noted Repetitive Peak FOS10BH 200 Off StateVollese FostODH [von] 00 v_ [Tersoroter259c) Fostomy © "™ 600 vy ERax=1Ka FOsi0NH 800 v On-State Current __——‘iams) 3 A___AllConduction Angles Te= 85°C Rverage On-State Current Trav) Es] A____te=85°C, Half Cycle, O= 180°C Nonrept. On-State Current itsM 838A Half Cycle, 60Hz Nonrept. On-State Current ism 80 A ___HalfCycle, 60Hz SSS Fusing Current Ft 32 Ats__t=10ms,HalfCycle SOS Peak Reverse Gate Voltage Vornm 3 V__Ten=10 pA Peak Gate Current Tem 2 A 10ys max. Peak Gate Dissipation Pem 2z W___ i0ysmax. Gate Dissipation Peavy 0.6 Ww 20ms max. ‘Operating Temperature Ti =40__128 °C Storage Temperature Tata —40 128°C Soldering Temperature Tai 250 °C 1.6mm fromcase, 10smax. Electrical Characteristics ___Ta= 26°C unless otherwise noted Parameter ‘Symbol Min. Max. Unit _Test Conditions a Off-State Leakage Current TorM/IRRM 1.5 mA Tj= 125°C, @ Vonm+ Vann Rox=1KO On-State Voltage Vr 15 _V__ath=6A,Tj= 26°C On-State Threshold Voltage Vriror 096 V__tj=125°C On-State Slope Resistance Tr 33m‘ T= 125°C GateTriggerCurrent +(‘\\@r +40 +25 mA Vp=-7V. GateTriggerVoltage ~~ ~+Ver ~~ +20 +#V + +Vp=7V. Holding Current in 75 mA Agx=1KQ Tatching Current ——S=~SSS 160 mA Rgx=1KO Critical Rate of Voltage Rise dv/dt 400 Wins _Vo=.67xVpam Rax= 1KO Tj= 126°C Critical Rate of Current Rise vat 700 Ajus Ig = 126 mA dig/dt=1.25A/us Tj=125°C Gate ControliedDelay Time tgq~S~S~SC~S~S~SCSCS Ons ~—sdg = 2B MA dig/dt=1.26Ajus CTommutated Turn-Off Time tq 8s“ T= 85 CV = 67xVAM : Va= 35 V Ir=IiAV) Thermal Resistance junc.tocase RojSS~S~C*~SSSSCiR TT 7 ThermalResistancejunc.toamb. Roja =SS=*~é<“‘éSéSCOOOC!!CVKWOUWUWUWWUWUWUWUWWUWUWUWUUUUWUUUUUUUUO!