F0810MH STMICROELECTRONICS | Alldatasheet

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Technical content

e MICROELECTRONICS F0810xH FAST SWITCHING SCR

FEATURES

= It(RMs) = 8A = Vorm= 200V to 800V a tq =20us max JE K Zz Ge G

DESCRIPTION

The FO810xH series of SCRs uses a high performance MESA GLASS PNPN technology. T0220 These parts are intended for high frequency non-insulated switching applications. (Plastic) ABSOLUTE RATINGS (limiting values) [sme] Pammetr vat‘ un | hyRms) RMS on-state current Tc= 95°C. (180° conduction angle) ayy Average on-state current Te= 95°C A (180° conduction angle) ltsm Non repetitive surge peak on-state current A ee A (; initial = 25°C ) [e-m| 0 _| di/dt Critical rate of rise of on-state current Alus le=100mMA = dic /dt=1 Alus. Tstg Storage and operating junction temperature range - 40, +150 °C Tj -40, +125 Ti Maximum lead temperature for soldering during 10s at 260 °C 4.5mm from case ™ a petotm| ny | VorM Repetitive peak off-state voltage v VrRM Tj = 125°C January 1995, us Mm 7929237 OObL051 47] eee eaaaaaaamaamaaaaaaaaasaammmamaaaammmmmmaaacamamaaaaamaaaaaaaaaaaasacaamacaaaaaaaaaaaaasaaaaaaeaaaaacaascaasaaasaaaaaaaacasaaaaaaasaaaaaaaacaasaaaaamaamacaaaaaaasacasacmcaasaaassscmmcmssmsmamamall

[Sie [Penner —S*dYS ae Fania [anionvasstoo Cd GATE CHARACTERISTICS (maximum values) Paay=0.5W Pem=2W(tp=20ys) lam =2A (tp = 20s)

ELECTRICAL CHARACTERISTICS

lat | Vo=12V (DC) Pi-330 Tj= 25°C [unf toi mA fuwe[ as | a tot Vp=Vorm — Itm= 3 x Iav) Tj= 25°C | TYP us dia/dt = 0.8A/us ka = 90mA InRM Vr = VRRM _ fieniec| wax | 5 | ma | m= 3x Itav) Va=35V Tj= 110°C | MAX us di/dt=25Ahis tp=100us dV/dt=25Vius Vo= 67%VoRM

ORDERING INFORMATION

SCR MESAGLASS J | L PACKAGE: | H = T0220 Non-insulated CURRENT +" SENSITIVITY '——-———~ VOLTAGE 215 “THOMSON bn SS Miso M@™ 7929237 OObL052 408 me Neen nnnnn enna

Fig.1 : Maximum average power dissipation ver- Fig.2 : Correlation between maximum average sus average on-state current. power dissipation and maximum allowable tem- perature (Tamb and Tcase) for different thermal resistances heatsink + contact. Pw) Pw) Tease (°C) 12; - 12 6 of al ee | 4 ee) TONNE | MGR 0-1 saci | NX , CaP a < ~_|o ime | TN, o 1 2 3 4 5&5 6 7 8B "> 20. 40 60 80 100 120 10> Fig.3 : Average on-state current versus case tem- Fig.4 : Relative variation of thermal impedance perature. versus pulse duration. Tavy(A) Zth/Rth 10 a Coa el rE] iT yyy | Secs ei Seat cial

8 E SE ae aT

rE] TT TLEN Pe CT ZA Seem eel A Hl IB) TT a -: ON Seapets tL | | meen | ENS cg Af ID UU 0 10 20 30 40 50 60 70 80 90 100 110 120130 1E-3 1E-2 1E4 1E+0 1E+1) 1E+2 5E+2 Fig.5 : Relative variation of gate trigger current and Fig.6 : Non repetitive surge peak on-state current holding current versus junction temperature. versus number of cycles. 'ot(TH] wnITH) sw) igMTSaE"G} n(TI=aS"C) ooo” a | | ak | [= fT ft ft tT 80 A ee A © l 46h es ntil| es HTK. 42 pmo»SA TP Pt tn | hed ™ | | | ap SS EE a os | | IS] Td 20 a a mi osL_L_ eo TT o -40 -20 oO 20 40 60 80 100 120 140 1 10 100 1000 [57 $S5:THOMSON 3/5 Mi 7929237 OObb053 744 mm EE EE EE EE

Fig.7 : Non repetitive surge peak on-state current Fig.8 : On-state characteristics (maximum values). for a sinusoidal pulse with width :t< 10ms, and cor- responding value of Ft. lpg (A): Pt (Ata) Hr (A) WOOO eee 900 — | ptt tit ol ee a on

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es Os | 1 10 005115225 335 445 5 55 6 65 45 -THOMSO! eee SSS, ££ @® 7929237 OObL054 boo a

$992 eeeSSSSSSSSSSSSSSSSSSSSSSSSSSSSSSSFO8 TOKE PACKAGE MECHANICAL DATA

70220 Non-insulated (Plastic)

——— A H pal | frosl [Joos] @ ! |B | [es] es lozsslozss| | ' B | of fre7{ | fosoof | c pe] [ [ae] [ foes) fo] [ [sol | lois [uv] [42 [13 [7 Joos Ni m [Lt] | fos] [oss] N [mar] | [ors [| [mi fesa[ | foroof | [Pe] fy [sas] fooss) Marking : type number Weight: 1.89 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringament of patentsor other fights of rd parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied SGS-THOMSON Microelectronics products are not authorized for use as critical components in lite support devices or systems without express written approval of SGS-THOMSON Microelectronics. © 1995 SGS-THOMSON Microelectronics - All rights reserved. SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. — SGS-THOMSON SIS ord ONERORLBETROMIS mm 7929237 OObb055 51?