F06N50A GWSEMI | Alldatasheet
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Technical content
Features
VDS=500V, ID=0.6A RDS(ON)=16Ω@VGS=10V High Power and current handing capability Lead free product is acquired Surface Mount Package G Schematic diagram Main Applications Battery Protection Load Switch Power Management SOT-23 Top View D G S N-Channel Enhancement MOSFET F06N50A
Electrical Characteristics (T Ambient =25º C unless noted otherwise) Symbol Parameters Conditions Min. Typ. Max. Unit Off Characteristics BV DSS Drain Source Breakdown Voltage V GS =0V, I D =250μA Volt I DSS Zero Gate Vol tage Drain Current V DS V, V GS =0V μ A I GSS Gate Body Leakage Current V GS V, V DS =0V 100 nA On Characteristics V GS(th) Gate Threshold Voltage V DS = V GS , I D =250μA Volt R DS(ON) Drain Source On State Resistance V GS V, I D A Ω V GS 5V, I D A Ω Dynamic Characteristics C iss Input Capacitance V D D V V GS =0V , F =1MHz pF C oss Output Capacitance pF C rss Reverse Transfer Capacitance pF Q g Total Gate Charge V D S V, I D A V GS V nC Q gs Gate Source Charge nC Q gd Gate Drain Charge nC Switching Characteristics td(on) Turn on Delay Time V DD V, I D A V G S V , R G Ω nS tr Turn on Rise Time nS td(off) Turn Off Delay Time nS tf Turn Off Fall Time nS Notes: 1. Pulse Test: Pulse Width≤300μs, Duty Cycle≤2% N-Channel Enhancement MOSFET F06N50A
Typical Electrical and Thermal Characteristics N-Channel Enhancement MOSFET F06N50A
N-Channel Enhancement MOSFET F06N50A
c A D e b L S E DIM MILLMETERS INCHES MIN MAX MIN MAX A 0.90 1.12 0.053 0.044 A1 0.01 0.20 0.0004 0.004 A2 0.90 1.00 0.0346 0.040 b 0.35 0.50 0.014 0.020 c 0.09 0.18 0.003 0.007 D 2.80 3.00 0.110 0.120 E 2.10 2.60 0.083 0.104 E1 1.20 1.40 0.470 0.055 e 0.95 BSC 0.0374 Ref e1 1.90 BSC 0.0748 Ref L 0.40 0.60 0.016 0.024 L1 0.64 Ref 0.025 Ref S 0.50 Ref 0.020 Ref N-Channel Enhancement MOSFET F06N50A Plastic surface mounted package; 3 leads SOT-23 PACKAGE OUTLINE