F05B23VR SHINDENGEN | Alldatasheet
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Technical content
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd 230V 0.5A OUTLINE DIMENSIONS (Unit : mm) RATINGS Case : B-pack VR Series Power MOSFET N-Channel Enhancement type
- DC/DC converters
- Power supplies of DC 12-24V input
- Product related to Integrated Service Digital Network APPLICATION
- Applicable to 4V drive.
- The static Rds(on) is small.
- Built-in ZD for Gate Protection.
FEATURES
- Absolute Maximum Ratings （Tc = 25℃） Item Symbol Conditions Ratings Unit Storage Temperature Tstg -55～150 ℃ Channel Temperature Tch 150 Drain-Source Voltage VDSS 230 V Gate-Source Voltage VGSS ±20 Continuous Drain Current（DC） ID 0.5 Continuous Drain Current（Peak) IDP 1 A Continuous Source Current（DC） IS 0.5 PT On alumina substrate, 50.8mm□, substrate thickness 0.64t, Ta = 25℃ 1.5 W Total Power Dissipation 3.5
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd F05B23VRVR Series Power MOSFET
- Electrical Characteristics Tc = 25℃ Item Symbol Conditions Min. Typ. Max. Unit Drain-Source Breakdown Voltage V(BR)DSS ID = 250μA, VGS = 0V 230 V Zero Gate Voltage Drain Current IDSS VDS = 230V, VGS = 0V 250 μA Gate-Source Leakage Current IGSS VGS = ±20V, VDS = 0V ±0.1 Forward Tranｓconductance gfs ID = 0.5A, VDS = 10V 0.2 0.4 S Static Drain-Source On-ｓtate Resistance RDS(ON) ID = 0.5A, VGS = 10V 5.5 8 Ω Gate Threshold Voltage VTH ID = 0.2mA, VDS = 10V 234V Source-Drain Diode Forward Voltage VSD IS = 0.5A, VGS = 0V 1.5 Thermal Resistance θja junction to ambient, on alumina substrate 83.3 ℃/Ｗ θjc junction to case 35.7 Total Gate Charge Qg VGS = 10V, ID = 0.5A, VDD = 200V 2.7 nC Input Capacitance Ciss 45 Reverse Transfer Capacitance Crss VDS = 10V, VGS = 0V, f = 1MHZ 4.5 pF Output Capacitance Coss 30 Turn-On Time ton ID = 0.5A, VGS = 10V, RL = 200Ω 30 60 ns Turn-Off Time toff 50 100
0.2 0.4 0.6 0.8 0 2 4 6 8 10 F05B23VR Transfer Characteristics VDS = 10V pulse test TYP Ta = −55°C 25°C 100°C 150°C Gate-Source Voltage V GS [V] Drain Current I D [A]
Static Drain-Source On-state Resistance -50 0 50 100 150 F05B23VR VGS = 10V pulse test TYP ID = 0.5A Case Temperature Tc [ °C] Static Drain-Source On-state Resistance R DS(ON) [Ω ]
-50 0 50 100 150 F05B23VR VDS = 10V ID = 0.2mA TYP Case Temperature Tc [ °C] Gate Threshold Voltage V TH [V]
0.001 0.01 0.1 1 10 100 F05B23VR 100µs Ta = 25°C Single Pulse Alumina substrate 200µs 1ms 10ms DC 230 Drain-Source Voltage V DS [V] Drain Current I D [A] RDS(ON) limit
0.001 0.01 0.1 1 10 100 F05B23VR 100µs Tc = 25°C Single Pulse 200µs 1ms 10ms DC 230 Drain-Source Voltage V DS [V] Drain Current I D [A] RDS(ON) limit
Transient Thermal Impedance 0.1 100 1000 F05B23VR 10-4 10-3 10-2 10-1 100 101 102 103 0.05 0.50.2 20 5052 200 500 2000 5000 Alumina substrate 50.8mm 2 × 0.64mm Time t [s] Transient Thermal Impedance θja [°C/W]
Transient Thermal Impedance 0.1 100 1000 F05B23VR 10-4 10-3 10-2 10-1 100 101 102 103 0.05 0.50.2 20 5052 200 500 2000 5000 Time t [s] Transient Thermal Impedance θjc(t) [°C/W]
0.1 100 1000 0 50 100 150 200 F05B23VR 0.005 Tc=25°C TYP Ciss Coss Crss Drain-Source Voltage V DS [V] Capacitance Ciss Coss Crss [pF]
Power Derating [%] Case Temperature Tc [ °C]
Gate Charge Characteristics ID = 0.5A TYP VDD = 200V VGS VDS Gate Charge Qg [nC] Drain-Source Voltage V DS [V] Gate-Source Voltage V GS [V]