F0530602B EUDYNA | Alldatasheet

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Technical content

F0530602B3.3 V Laser Diode Driver

  • Up to 1.3 Gb/s high speed operation
  • 3.3 V single power supply
  • Up to 35 mA p-p modulation current
  • Up to 35 mA bias current
  • Maximum bias current preset control

Applications

  • Laser diode driver of an optical transmitter circuit for SDH (STM4) / SONET (OC-12) Functional Description The F0530601B is a high performance GaAs integrated laser diode driver for use in an optical transmitter circuit up to 1.3 Gb/s NRZ data rate. The F0530601B typically specifies rise time and fall time of 300 psec (20 % - 80 %,25 Ω load). It features a low power 3.3 V supply operation, 1 to 35 mA presettable bias current and up to 35 mA modulation current. 02.08.08 3.3V Operation Laser Diode Driver F0530602B

F0530602B3.3 V Laser Diode Driver ♦♦♦♦♦ Absolute Maximum Ratings Ta=25 °C, unless specified ♦♦♦♦♦ Recommended Operating Conditions Ta=25 °C , VDD =0 V, VSS =-3.3 V, unless specified retemaraPl obmyS eulaV stinU .niM. pyT. xaM egatloVylppuS V DD V- SS 531.33 .35 64.3V egatloVtuptuOt uoVV DD 6.1-V DD 0.1-V DD V gerVegatloVtupnIg erVV SS 68.1+N EPOV SS 21.2+V erutarepmeTgnitarepOnoitcnuJj T0 5 25 21C ° Parameter Symbol Value Units Supply Voltage - 0.2 to 4.0 V Supply Current Ickt 150 mA Modulation Current Iout 70 mA Bias Current Ioutbi 70 mA Input Voltage Vin V Junction Operating Temperature Tj 0 to +140 ° C Storage Temperature -55 to +150 VDD , VSS VSS to VDD +0.5 Tstg

F0530602B3.3 V Laser Diode Driver ♦♦♦♦♦ Electrical Characteristics Ta=25 °C, VDD -VSS =3.135 ~ 3.465V, unless specified Parameter Symbol Test Conditions Value Units Min. Typ. Max. Supply Current Ickt IMOD, IBIAS are excluded -3 5 5 0 m A Input Voltage (for TD,TDB) VIH Differential Input VDD -1.17 VDD -1.95 VDD -0.8 VDD -1.8 VDD -0.73 VDD -1.45 V VIL V V Input Current Input Resistance Input Bias Voltage IIH VIH=V DD -0.7V -100 - 100 µA IIL Ri VIB VIL=VDD -1.9V -100 -1 0 0 µ A 1.3 - k Ω Modulation Current IMMAX VDIS=OPEN DC, VDD =VSS =GND 35 - - mA IMMIN VDIS=OPEN - - 5 mA IMDIS - - 0.5 mA Bias Current IBMAX VDIS=OPEN 35 - - mA IBMIN VDIS=OPEN - - 5 mA IBDIS VDIS=V DD -0.2V VDIS=V DD -0.2V -- 0 . 5 m A Input Voltage for DisableVDISIH Disable Operation - VDDVDD -2 V VDISIL Enable Operation VSS VSS +0.2OPEN V Resistance for Bias Monitor RBM - 10 - Ω Monitor Voltage of Mark Ratio VMRK Differential Output - 0.9 - V Rise time tr - 300 - ps Fall time tf RL=25 Ω, 20%-80% RL=25 Ω, 20%-80% -3 0 0 - ps VDD -VSS =3.3V VDD -1.17 V DD -1.3 V DD -1.43

F0530602B3.3 V Laser Diode Driver ♦♦♦♦♦ Die Pad Description Input Buffer Mod. Circuit Bias Circuit Output Buffer Control Circuit OUT OUTTB OUTBIAS TD TDb TDB TDBb MRKOUT MRKOUTB Disable VB VM BMP BMN Bias Circuit Bias Circuit Into Circuit Vreg TD TDB TDb TDBb OUT OUTB OUTBIAS VM VB Disable Vreg BMP BMN MRKOUT MRKOUTB Data Input (pos.) Data Input (neg.) Input Bias (pos.) Input Bias (neg.) Modulation Current Output (pos.) Modulation Current Output (neg.) Bias current Output Modulation Current Control Bias Current control Current Shutdown Control Reference Voltage Bias Current Monitor (pos.) Bias Current Monitor (neg.) Mark ratio Monitor (pos.) Mark ratio Monitor (neg.)

F0530602B3.3 V Laser Diode Driver ♦♦♦♦♦ Die Pad Assignments 13 24 5 6 7 8 9 21 19 20 18 17 16 15 14 13 No. No. O A Symbol BMN BMP OUTBIAS OUT V SS mod OUTB V DD TEMP VSS TEMP VM VB MARKOUTB MARKOUT Disable ALMIN Symbol ALMINB Vreg V SS TD TD (bias) TDB TDB (bias) TD V DD VSS bias Center Coordinates (µm) (80,80) (240,80) (400,80) (560,80) (720,80) (880,80) (1040,80) (1200,80) (1360,80) (1360,265) (1360,445) (1360,625) (1360,810) (1200,810) Center Coordinates (µm) (1040,810) (880,810) (720,810) (560,810) (400,810) (240,810) (80,810) (80,625) (80,445) (180,265) (0,0) (1440,890)

F0530602B3.3 V Laser Diode Driver TD V M VB TDB TDBb TDb VSS VSS mod VSS bias OUTB OUTBIASOUT DUT DC Source/ Monitor Unit DC Source/ Monitor Unit Probing System

F0530602B3.3 V Laser Diode Driver ♦♦♦♦♦ Typical DC Characteristics (1) Switching Characteristics (a) Modulation Current Switching (b) Output Current Switching VM =-2.2V VM =-2.3V VM =-2.4V VM =-2.5V VM =-2.6V VM =-2.7V VM =-2.8V .0000 80.00 8.000 /div IO (mA) Input Voltage VIN1 (V) Output Current Iout (mA) (VSS =-3.3V, TDB=-1.3V, VB=-2.6V) VB=-2.2V VB=-2.3V VB=-2.4V VB=-2.5V VB=-2.6V VB=-2.7V VB=-3.3V .0000 80.00 8.000 /div IO (mA) Input Voltage VIN1 (V) Output Current Iout (mA) (VSS =-3.3V, TDB=-1.3V, VM =-2.5V)

F0530602B3.3 V Laser Diode Driver (2) Modulation Current Control (3) Bias Current Control .0000 80.00 8.000 /div IO (mA) Control Voltage VB (V) Bias Current IB (mA) (VSS =-3.3V, TD, TDB,VM : open, OUT : open) .0000 80.00 8.000 /div IO (mA) Control Voltage VM (V) Modulation Current IM (mA) (VSS =-3.3V, TD=-1.0V, TDB=-1.6V, OUTBIAS,VB: open)

F0530602B3.3 V Laser Diode Driver (4) The Dependence of Modulation Current on the ambient temperature VM =-2.2V VM =-2.3V VM =-2.4V VM =-2.5V VM =-2.6V VM =-2.7V -40 -20 02 0 4 06 08 0 100 IM (mA) Ambient Temperature (°C) (VSS =-3.3V, TD=-1.0V, TDB=-1.6V, VB, OUTBIAS: open) Electron Device Department