F00301 SSDI | Alldatasheet
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D | PRELIMINARY SYS SFF6N100 «.,. LID STATE DEVICES, INC . 14849 Firestone Boulevard. La Mirada,CA 90638 Phone: (714) 670-SSDI (7734) - Fax: (714) 522-7424 4.5 AMP Designer’s Data Sheet 1000 VOLTS FEATURES: N-CHANNEL ; POWER MOSFET + Rugged construction with poly silicon gate + Low RDS(on) and high transconductance MILPACK - Excellent high temperature stability + Very fast switching speed . Fast recovery and superior dv/dt performance - Increased reverse energy capability - Low input and transfer capacitance for easy paralleling - Hermetically sealed surface mount power package + TX, TXV and Space Level screening available + Replaces: IRF340 Types MAXIMUM RATINGS CHARACTERISTIC vA | uN | Continuous Drain Current @ 25°C 45 @100°C 28 Operating and Storage Temperature -55 to +150 Total Device Dissipation @ TC=25°C 100 Total Device Dissipation @ TC=55°C 76 PACKAGE OUTLINE: MILPACK 010 x PIN OUT: oasis 008 pues erie omeais —— ee a 0.050" Ret. PIN 1: DRAIN i r [=| T ' PIN 2: SOURCE j= | 020, PIN 3: GATE I roar | | | Es | 0.130.005" — at 1 “aay — a 020°
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NOTE: All ificati bj i SSDI prior to release.
SOLID STATE DEVICES, INC
14849 Firestone Boulevard - La Mirada,CA 90638
Phone: (714) 670-SSDI (7734) -_ Fax: (714) 522-7424 ELECTRICAL CHARACTERISTICS @ Tu=25°C (Unless Otherwise Specified) RATING sympou| min | typ | max | UNIT | Drain to Source Breakdown Voltage (VGS=0 V, ID=1mA) BVpss 1000 Drain to Source on State Resistance ID=2.8A 2.0 (VGS=10 V) 1D=4.5A | Rpsjon) 2.25 Temperature Coefficient of Breakdown Voltage ABVpss (VGS=10 V) ATj 1.4 we Gate Threshold Voltage VGSs\\(th) (VDS=VGS, ID=250,1A) Forward Transconductance (VDS > 50V, IDS=2.8A) 3 S(v) 80% Gate Voltage Drain Current (VDS=80% rated voltage, VGS=0 V) 25 pA (VDS=80% rated VDS, VGS=0 V, TA=125°C) 250 Gate to Source Leakage Forward At rated VGS 100 Gate to Source Leakage Reverse -100 Total Gate Charge VGS=10 Volts Qg 200 Gate to Source Sharge VOS = 400 v Qgs 20 nc Gate to Drain Charge = 40 Qgd 110 Turn on Delay Time VDD= 400 V td(on) 30 Rise Time ID=4.5A tr 44 Turn Off Delay Time RG=6.22 td(off) 210 Fall Time tr 60 Diode Forward Voltage Vsp Vv (IS=rated ID, VGS=0 V, TJ=25°C) . TJ=25°C. 1200 Diode Reverse Recovery Time ter nsec Reverse Recovery Charge dvdtstae Aiisec QrR Pc | sl 8.4 ue Input Capacitance VGS=0 Volts Ciss 2400 Output Capacitance VDS=25 Volts Coss 240 Reverse Transfer Capacitance f=1MHz Crss 80