F00297_15 SSDI | Alldatasheet
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SOLID STATE DEVICES, INC II
14849 Firestone Boulevard - La Mirada,CA 90638
Phone: (714) 670-SSDI (7734) - Fax: (714) 522-7424
11 AMP
Designer’s Data Sheet 600 VOLTS 0.6 Q FEATURES: N-CHANNEL ; POWER MOSFET - Rugged construction with poly silicon gate + Low RDS(on) and high transconductance MILPACK - Excellent high temperature stability - Very fast switching speed + Fast recovery and superior dv/dt performance - Increased reverse energy capability - Low input and transfer capacitance for easy paralleling - Hermetically sealed surface mount package - Low inductance package - TX, TXV and Space Level screening available MAXIMUM RATINGS CHARACTERISTIC SYMBOL VALUE UNIT , , @TC=25°C ry Continuous Drain Current @TC=100°C fom | Amps Operating and Storage Temperature -55 to +150 Cc Total Device Dissipation @ TC=25°C 100 Total Device Dissipation @ TC=55°C 76 Single Pulse Avalanche Energy a PACKAGE OUTLINE: MILPACK one 14 PIN OUT: alee eer oat onto: Fae =p ri. PIN 3: GATE | pm | asa" 28 | | 3308-005" —t oasatars fe - —- = —- 4 \\El |) —— — ' TT coe cor I NOTE: All ificati bj h i SSDI prior to release.
SFFC50 SOLID STATE DEVICES, INC 14849 Firestone Boulevard. La Mirada,CA 90638 Phone: (714) 670-SSDI (7734). Fax: (714) 522-7424 ELECTRICAL CHARACTERISTICS @ Ty=25'C (Unless Otherwise Specified) RATING symeot | win | tye | wax | unr Drain to Source Breakdown Voltage (VGS=0 V, ID=250uA) BVpss Vv Temperature Coefficient of Breakdown Voltage ABVpss “AT 780 mvc Drain to Source on State Resistance ID=6A 0.60 (VGS=10 V) ID=11 A 0.65 Gate Threshold Voltage (VDS=VGS, ID=250,1A) Vasith) Forward Transconductance (VDS=VGS, IDS=6 A) 5.7 S(v) Zero Gate Voltage Drain Current (VDS=80% rated voltage, VGS=0 V) 100 pA (VDS=80% rated VDS, VGS=0 V, TA=125°C) 500 _ | Gate to Source Leakage Forward} At rated VGS 100 Gate to Source Leakage Reverse -100 Total Gate Charge VGS=10 Volts Qg 140 Gate to Source Charge vps sev Qgs 20 Gate to Drain Charge ates Qgd 69 Turn on Delay Time vos ey talon) 21 30 Rise Time rated ID tr 10 20 Turn Off Delay Time RG=6.2Q td(off) 65 100 Fall Time tt 18 25 Diode Forward Voltage Vsp 14 (IS=rated ID, VGS=0 V, TJ=25°C) . TJ=25°C Diode Reverse Recovery Time IF=rated ID tr nsec Reverse Recovery Charge di/dt=100 A/usec QrR ue Input Capacitance VGS=0 Volts Ciss 2500 Output Capacitance VDS=25 Volts Coss 350 Reverse Transfer Capacitance f= 1 MHz Crss 55