F00291 SSDI | Alldatasheet

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SSDI PRELIMINARY . EE SOLID STATE DEVICES, INC SFFC5OM _.. « SFFC50z sy 14849 Firestone Boulevard. La Mirada,CA 90638 izi) Phone: (714) 670-SSDI (7734). Fax: (714) 522-7424 11 AMP H <F cee 22

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Designer’ s: Data Sheet- 0.6 Q —— N-CHANNEL FEATURES: POWER MOSFET + Rugged construction with poly silicon gate ‘ + Low RDS(on) and high transconductance TO-254 TO-254Z) + Excellent high temperature stability ~ + Very fast switching speed + Fast recovery and superior dv/dt performance + Increased reverse energy capability KD - Low input and transfer capacitance for easy paralleling D2 x= + Hermeticaily sealed surface mount package P ZR cS + Low inductance package “6 - TX, TXV and Space Level screening available + Replaces: IRFC50 Types MAXIMUM: RATINGS: CHARACTERISTIC SYMBOL VALUE UNIT i il @TC=25°C Continuous Drain Current @TC=100°C Po» ft on] Operating and Storage Temperature Total Device Dissipation @ TC=25°C Total Device Dissipation @ TC=55°C Single Pulse Avalanche Energy ee BA KOGE OUTLINE: TO-254 PACKAGE OUTLINE: TO-254Z ., PIN OUT: PIN 1:DRAIN PIN 1:DRAIN PIN 2: SOURCE PIN 2: SOURCE PIN 3: GATE sis. a 8 28, PIN 3: GATE a 1139 49[" (050 [7335 rT | 040 B10- ] [* E504 ab .050 lg ed ae

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PRELIMINARY SND)]| SFFC50z SOLID STATE DEVICES, INC 14849 Firestone Boulevard. La Mirada,CA 90638 Phone: (714) 670-SSDI (7734). Fax: (714) 522-7424 ELECTRICALCHARACTERISTICS-@ T3=25°C-(Unless: Otherwise Specified): RATING symBoL| min | typ | MAX Drain to Source Breakdown Voltage (VGS=0 V, [D=250uA) BVoss Temperature Coefficient of Breakdown Voltage ABVpss ATj we Drain to Source on State Resistance |D=6A 0.60 (VGS=10 V) ID=11 A 0.65 Gate Threshold Voltage (VDS=VGS, ID=250uA) Vas(th) 4 v Forward Transconductance (VDS=VGS, IDS=6 A) 57 13 So) Zero Gate Voltage Drain Current (VDS=80% rated voltage, VGS=0 V) 100 pA (VDS=80% rated VDS, VGS=0 V, TA=125°C) 500 Gate to Source Leakage Forward! At rated VGS 100 Gate to Source Leakage Reverse -100 Total Gate Charge VGS=10 Volts Qg 100 140 Gate to Source Charge VDS~360 V Qgs 1 20 Gate to Drain Charge ate Qgd 56 69 Turn on Delay Time VODSS0%8 td(on) 18 Rise Time rated ID tr 37 Turn Off Delay Time RG=6.2Q td(off) 88 Fail Time tt 36 Diode Forward Voltage Vsp 1.4 (IS=rated 1D, VGS=0 V, TJ=25°C) " 7 TJ=150°C Diode Reverse Recovery Time \\F=rated 1D tre 830 nsec Reverse Recovery Charge di/dt=100 Ajusec Qrr 5.9 ue input Capacitance VGS=0 Volts Ciss 2700 Output Capacitance VDS=25 Volts Coss 300 Reverse Transfer Capacitance f= 1 MHz Crss 61