F00247_15 SSDI | Alldatasheet

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Technical content

SOLID STATE DEVICES, INC. SFF70N10M SFF70N10Z FEATURES: DATA SHEET #: F00247B MAXIMUM RATINGS

  • Rugged construction with poly silicon gate
  • Ultra low RDS (on) and high transconductance
  • Excellent high temperature stability
  • Very fast switching speed
  • Fast recovery and superior dv/dt performance
  • Increased reverse energy capability
  • Low input and transfer capacitance for easy paralleling
  • Hermetically sealed package
  • TX, TXV and Space Level screening available
  • Replaces: SMM70N10 Types

70 AMP

600 VOLT

0.030ΩΩΩΩΩ N-CHANNEL POWER MOSFET DESIGNER'S DATA SHEET NOTE: All specifications are subject to change without notification. SCDs for these devices should be reviewed by SSDI prior to release. ID 56 1/ Continuous Drain Current Drain to Source Voltage V DS 100 Amps Volts Thermal Resistance, Junction to Case R 0JC T op & T stg -55 to +150Operating and Storage Temperature oC oC/W.83 CHARACTERISTIC SYMBOL VALUE UNIT WattsTotal Device Dissipation P D 150 114 @ TC = 25oC @ TC = 55oC TO-254Z (Z)TO-254 (M)

14830 Valley View Blvd * La Mirada, Ca 90638

Phone: (562) 404-7855 * Fax: (562) 404-1773 CASE OUTLINE: TO-254Z (Sufix Z)CASE OUTLINE: TO-254 (Sufix M) Available with Glass or Ceramic Seals. Contact Facory for details. Gate to Source Voltage V GS + 20 Volts Pin Out: Pin 1: Drain Pin 2: Source Pin 3: Gate Pin Out: Pin 1: Drain Pin 2: Source Pin 3: Gate

Drain to Source on State Resistance (VGS = 10 V ,Tc = 150oC) SOLID STATE DEVICES, INC. ELECTRICAL CHARACTERISTICS @ T J =25oC (Unless Otherwise Specified) VDrain to Source Breakdown Voltage (VGS =0 V , ID = 250µA) -BV DSS - RATING SYMBOL MIN TYP MAX UNIT 100 ΩΩΩΩΩR DS(on) - VGate Threshold Voltage (VDS = VGS, ID = 250µA) -V GS(th) 4.02 SmhoForward Transconductance (VDS > ID(on) X RDS (on) Max, IDS=60% rated ID) 40gfs -20 µµµµµ A Zero Gate Voltage Drain Current (VDS = 80% rated voltage, VGS = 0V) (VDS = 80% rated VDS , VGS = 0V , TA = 125oC) IDSS - Gate to Source Leakage Forward Gate to Source Leakage Reverse -IGSS +100 -100 -At rated VGS Total Gate Charge Gate to Source Charge Gate to Drain Charge VGS = 10 V 80% rated VDS Rated ID Qg Qgs Qgd 110 140 nsec Turn on Delay Time Rise Time Turn off DelayTime Fall Time t d (on) tr td (off) tf 180 100 V1.0V SD 1.8- Diode Reverse Recovery Time Reverse Recovery Charge 1.25 0.3 trr Q RR 200 TJ =25oC IF = ID di/dt = 100A/µsec Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS =0 V olts VDS =25 V olts f =1 MHz Ciss Coss Crss 4100 1200 310 pF nsec µ µ µ µ µC For thermal derating curves and other characteristic curves please contact SSDI Marketing Department. AOn State Drain Current (VDS > ID(on) x RDS(on) Max, VGS = 10 V) -ID(on) -70 Diode Forvard Voltage (IS = rated ID , VGS = 0V , TJ = 25oC) nC nA 250 250 SFF70N10M SFF70N10Z Phone: (562) 404-7855 * Fax: (562) 404-1773 NOTES: 1/ Maximum current limited by package, die rated at 70A. 0.025 0.03 VDD =50% rated VDS ID=70A RG=8 Ω VGS=10V