F00221 SSDI | Alldatasheet
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SOLID STATE DEVICES, INC Y Phone ay ero S801 (7734) tee (rtd) 822. 7424 one: ax: -
11 AMPS
Designer's Data Sheet 800 VOLTS 0.950 FEATURES: N-CHANNEL POWER MOSFET . Rugged construction with polysilicon gate + Low RDS(on) and high transconductance MILPACK 2 . Excellent high temperature stability . Very fast switching speed . Fast recovery and superior dv/dt performance . Increased reverse energy capability . Low input and transfer capacitance for easy paralleling . Ceramic Seals for improved hermeticity . Hermetically sealed surface mount power package ‘ TX, TXV and Space Level screening available . Replaces: IXTH11N80 Types MAXIMUM RATINGS CHARACTERISTIC symeo._| value | NT Fconmmnoancwen TT Operating and Storage Temperature Total Device Dissipation @ TC=25°C 250 Total Device Dissipation @ TC=55°C 190 PACKAGE OUTLINE:MILPACK 2 ve [— a7ess.oi0" — PIN OUT: TT PIN 1: DRAIN we mus PIN 2: SOURCE os9s*010" PIN 3: GATE 05008.010° onsot.oos* axsoe.010° oaaos.on0" @ PuCS 1054.05" maser “Toots TE: All iticati jb hi ithout SSDI prior to release.
SOLID STATE DEVICES, INC
14849 Firestone Boulevard: La Mirada,CA 90638
Phone: (714) 670-SSDI (7734): Fax: (714) 522-7424 ELECTRICAL CHARACTERISTICS @ Ty=25.C (Unless Otherwise Specified) RATING symeou| MN | typ | max | UNIT | Drain to Source Breakdown Voltage (VGS=0 V, ID=250A) BVpss 800 Drain to Source on State Resistance (VGS=10 V, ID=50% Rated ID Rosjon) On State Drain Current (VDS >ID(on) X RDS(on) Max, VGS=10 V Gate Threshold Voit (VDS=VGS, ID<250uAy VGsith) v Forward Transconductance (VDS >ID(on) X_RDS(on) Max, S(o) IDS=50% rated ID) Zero Gate Voltage Drain Current Nite rated voltage, VGS=0 ) loss 250 pA VDS=80% rated VDS, VGS=0 V, TA=125°C) 1000 Gate to Source Leakage Forward| —Atrated VGS +100 Gate to Source Leakage Reverse -100 Total Gate Charge VGS=10 Volts Qg 128 155 Gate to Source Charge 80% rated vos Qgs 30 45 Gate to Drain Charge 50% Rated Qga 55 80 Turn on Delay Time veo 50% td(on) 20 350 Rise Time 50% rated ID tr 33 50 Turn Off Delay Time RG-2.00 ta(ott) 63 100 Fall Time tr 32 50 Diode Forward Voltage Vsp (IS=rated ID, VGS=0 V, TJ=25"C) Diode Reverse Recovery Time ees, nsec Reverse Recovery Charge di/dt=100 A/usec uc Input Capacitance VGS-0 Volts Ciss 4200 Output Capacitance VDS=25 Volts Coss 360 Reverse Transfer Capacitance f= 1 MHz Crss 100 For thermal derating curves and other characteristic curves please contact SSDI Marketing Department.