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NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: F00201D DOC Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, Ca 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER’S DATA SHEET Part Number / Ordering Information 1/ └ Screening 2/ __ = Not Screen TX = TX Level TXV = TXV Level S = S Level └ Lead Option 3/ __ = Straight Leads D B = D o w n B e n d U B = U p B e n d └ Package 3/ M = TO-254 Z = TO-254Z TO-254 (M) TO-254Z (Z) SFF20N60M SFF20N60Z

20 AMP / 600 Volts

Typ 0.30 Ω N-Channel POWER MOSFET Features:  Rugged Construction with Polysilicon Gate  Low R DS(ON) and High Transconductance  Excellent High Temperature Stability  Very Fast Switching Speed  Fast Recovery and Superior dV/dt performance  Increased Reverse Energy Capability  Low Input and Transfer Capacitance for Easy Paralleling  Hermetically Sealed, Isolated Surface Mount Power Package  Ceramic Seals for Improved Hermeticity  TX, TXV, S-Level screening available  Replacement for IXTH20N60 Types Maximum Ratings Symbol Value Units Drain – Source Voltage VDS 600 Volts Gate – Source Voltage VGS ±30 Volts Continues Drain Current ID 20 Amps Avalanche Energy, repetitive Avalanche energy, single pulse EAR EAS 0.03 1.0 J Power Dissipation TC = 25ºC TC = 55ºC PD 150 114 W Operating & Storage Temperature Top & Tstg -55 to +175 ºC Maximum Thermal Resistance Junction to Case RθJC 0.83 ºC/W Case Outline: TO-254 (M) Case Outline: TO-254Z (Z) Optional Lead Bend Configuration MDB & ZDB MUB & ZUB Suffixes

NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: F00201D DOC Solid State Devices, Inc. Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFF20N60M SFF20N60Z Electrical Characteristics 3/ Symbol Min Typ Max Units Drain to Source Breakdown Voltage (VGS = 0V, ID = 250µA) BVDSS 600 –– –– Volts Drain to Source On State Resistance (VGS = 10V, ID = 60% Rated ID) RDS(on) –– 0.30 0.35 Ω On State Drain Current (VDS > ID(on) x RDS(on) Max, VGS = 10V) ID(on) 20 25 –– A Gate Threshold Voltage (VDS = VGS, ID = 4mA) V GS(th) 2.0 3.4 4.5 V Gate to Source Leakage (At Rated VGS) IGSS –– –– ±100 nA Zero Gate Voltage Drain Current (VGS = 0V) VDS = Rated, TA = 25ºC VDS = 80% Rated, TA = 125ºC IDSS –– 1.0 µA mA Forward Transconductance * (VDS > ID(on) x RDS(on) Max, IDS = 50% Rated ID) g fs 10 20 –– Mho Total Gate Charge Gate to Source Charge Gate to Drain Charge VGS = 10V 50% Rated VDS 50% Rated ID Qg Qgs Qgd 100 170 nC Turn on Delay Time Rise Time Turn on Delay Time Fall Time V DD = 50% Rated VDS 50% Rated ID RG = 6.2Ω td(on) tr td(off) tf 150 nsec Diode Forward Voltage * (IS = Rated ID, VGS = 0V, TJ = 25°C) V SD –– 0.875 1.5 V Diode Reverse Recovery Time Reverse Recovery Charge (IF = 10A, di/dt = 100A/µsec, TJ = 25°C) trr QRR 240 1.3 800 nsec µC Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS = 0V VDS = 25V f = 1MHz Ciss Coss Crss 4000 400 120 pF NOTES: * Pulse test: pulse width = 300µsec, duty cycle = 2% / For ordering information, price, and availability - contact factory. 2/ Screening based on MIL-PRF-19500. Screening flows available on request. 3/ Unless otherwise specified, all el ectrical characteristics @25ºC. Available Part Numbers: SFF20N60M; SFF20N60MDB; SFF20N60MUB; SFF20N60Z; SFF20N60ZDB; SFF20N60ZUB; PIN ASSIGNMENT (Standard) Package Drain Source Gate TO-254 (M) Pin 1 Pin 2 Pin 3 TO-254Z (Z) Pin 1 Pin 2 Pin 3