F00175 SSDI | Alldatasheet

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Solid State Devices, Inc.

14830 Valley View Blvd * La Mirada, Ca 90638

Phone: (562) 404-7855 * Fax: (562) 404 -1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER’S DATA SHEET Features:

  • Rugged Construction with Polysilicon Gate Cell
  • Low RDS(ON) and High Transconductance
  • Excellent High Temperature Stability
  • Very Fast Switching Speed
  • Fast Recovery and Superior dV/dt Performance
  • Increased Reverse Energy Capability
  • Low Input and Transfer Capacitance for Easy Paralleling
  • Hermetically Sealed Surface Mount Power Package
  • TX, TXV, Space Level Screening Available
  • Replacement for IXTH24N50 Types SFF24N50/3 SFF24N50/3T

24 AMP / 500 Volts

0.2 W N-Channel Power MOSFET TO-3 Maximum Ratings Symbol Value Units Drain – Source Voltage VDS 500 Volts Gate – Source Voltage VGS ±20 Volts Continuous Drain Current (Tj limited) ID 24 Amps Avalanche Current Repetitive IAR 21 Amps Avalanche Energy Repetitive Single Pulse EAR EAS 690 mJ Operating & Storage Temperature Top & Tstg -55 to +150 ºC Thermal Resistance, Junction to Case RqJC 0.75 (typ 0.6) ºC/W Total Device Dissipation @ TC=25ºC Total Device Dissipation @ TC=55ºC PD 167

126 WATTS

Package Outline: TO-3 Pin Out: Pin 1: GATE Pin 2: SOURCE Pin 3: DRAIN Notes: 1. P/N: SFF 24N50/3: Pin Diameter : 0.043” 0.038” 2. P/N: SFF24N50/3T: Pin Diameter: 0.063” 0.058” NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: F00175E DOC 1.197 1.177 Ø.875 MAX 2x .043 .038 .675 .655.525 MAX.135 MAX .440 .420 2x .225 .205 .450 .250 2x .312 MIN 2x Ø.165 .151 2x R.188 MAX SEATING PLANE

Solid State Devices, Inc. Phone: (562) 404-7855 * Fax: (562) 404 -1773 ssdi@ssdi-power.com * www.ssdi-power.com SFF24N50/3 SFF24N50/3T Electrical Characteristics @ TJ = 25ºC (Unless Otherwise Specified) Symbol Min Typ Max Units Drain to Source Breakdown Voltage (VGS=0 V, ID=250 µA) BVDSS 500 –– –– Volts Drain to Source On State Resistance (VGS=10 V, ID=50% Rated ID) RDS(on) –– –– 0.2 W On State Drain Current (VDS>ID(on) X RDS(on) Max, VGS=10V) ID(on) 24 –– –– A Gate Threshold Voltage (VDS=VGS, ID= 4mA) VGS(th) 2.0 –– 4.0 V Forward Transconductance (VDS>ID(on) X RDS(on) Max, IDS= 50% Rated ID) gfs 8 12 –– mho Zero Gate Voltage Drain Current (VDS=max rated voltage, VGS=0 V) (VDS=80% rated VDS, VGS=0 V, TA=125ºC) IDSS –– 250 1000 mA Gate to Source Leakage Forward Gate to Source Leakage Reverse At rated VGS IGSS –– +100 -100 nA Total Gate Charge Gate to Source Charge Gate to Drain Charge VGS=10 Volts 50% rated VDS 50% Rated ID Qg Qgs Qgd 135 180 nC Turn on Delay Time Rise Time Turn on Delay Time Fall Time VDD=50% Rated VDS 50% Rated ID RG= 6.2Ω VGS=10 Volts td(on) tr td(off) tf 130 nsec Diode Forward Voltage (IS= Rated ID, VGS=0 V, TJ=25ºC) VSD –– –– 1.5 V Diode Reverse Recovery Time Reverse Recovery Charge TJ=25ºC IF=10A Di/dt=100A/µsec trr QRR 500 nsec nC Input Capacitance Input Capacitance Reverse Transfer Capacitance VGS=0 Volts VDS=25 Volts f=1 MHz Ciss Coss Crss 4200 450 135 pF For thermal derating curves and other characteristics please contact SSDI Marketing Department. NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: F00175E DOC