F00173 SSDI | Alldatasheet
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SOLID STATE DEVICES, INC SFF24NS0B 14849 Firestone Boulevard. La Mirada,CA 90638 ale i Phone: (714) 670-SSDI (7734). Fax: (714) 522-7424 —— od
24 AMP
Designer’s Data Sheet 500 VOLTS 0.23 QO FEATURES: N-CHANNEL POWER MOSFET . Rugged construction with polysilicon gate . Low RDS(on) and high transconductance MILPACK 2 - Excellent high temperature stability : Very fast switching speed . Fast recovery and superior dv/dt performance + Increased reverse energy capability SS . Low input and transfer capacitance for easy paralleling . Ceramic Seals for improved hermeticity < . Hermetically sealed surface mount power package SQ ZA : TX, TXV and Space Level screening available : Replaces: IXTH24N50 Types MAXIMUM RATINGS CHARACTERISTIC SYMBOL value | UNIT | Continuous Drain Current ee eee Amps Operating and Storage Temperature Top & Tstg -55 to +175 *c Total Device Dissipation @ TC=25°C Total Device Dissipation @ TC=55°C PACKAGE OUTLINE:MILPACK 2 [— a7ese.10" — PIN OUT: PIN 1: DRAIN aonaw “eres PIN 2; SOURCE PIN 3: GATE esone.o10" 06ot.005* aages 10° edozaior 2 PLCS) 01058.005" NOTE: All ificati b ith SSDI prior to release.
SOLID STATE DEVICES, INC ‘ 14849 Firestone Boulevard- La Mirada,CA 90638 Phone: (714) 670-SSDI (7734). Fax: (714) 522-7424 ELECTRICAL CHARACTERISTICS @ Ty=25°C (Unless Otherwise Specified) RATING symeot | min | typ | max | unr | Drain to Source Breakdown Voltage (VGS=0 V, ID=250A) BVpss Vv Drain to Source on State Resistance (VGS=10 V, ID=50% Rated ID Rps(on) On State Drain Current (VDS >ID(on) X RDS(on) Max, V@S=10 V 24 Gate Threshold Voltage (VDS>VGS, ID=4mA) Vv Forward Transconductance (VDS >ID(on) X_RDS(on) Max, S(v) IDS=50% rated ID) Zero Gate Voltage Drain Current (VDS=max rated voltage, VGS=0 V) 250 pA (VDS=80% rated VDS, VGS=0 V, TA=125°C) 1000 Gate to Source Leakage Forward At rated VGS- +100 Gate to Source Leakage Reverse -100 «| Total Gate Charge VGS=10 Volts Qg 135 180 Gate to Source Sharge SoM Fated vos Qgs 28 40 Gate to Drain Charge ‘ate Qga 62 85 Turn on Delay Time VDD=50% td(on) 30 Rise Time 50% rated ID tr fs Turn Off Delay Time RG=6.20, td(off) 130 Fall Time VGS=10V tf 40 Diode Forward Voltage Vsp (IS=rated ID, VGS=0 V, TJ=25°C) Diode Reverse Recovery Time Tee2s'6 Reverse Recovery Charge di/dt=100 Ajusec Input Capacitance VGS=0 Volts Ciss 4200 Output Capacitance VDS=25 Volts Coss 450 Reverse Transfer Capacitance f= 1 MHz Crss 135 SAFE OPERATING AREA (S.0.A.) 0 == ae & ol ENT TTT Sof : EE SS bs
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ett to oat EU CT CTT TTT ot 1 10 100 1000 DRAIN TO SOURCE VOLTAGE (VOS)