F00133 SSDI | Alldatasheet
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SSDI PRELIMINARY = oe Ba Hl SOLID STAT! VICES, IN ‘ E DEVICES, INC _ SFF50N20P
14849 Firestone Boulevard - La Mirada,CA 90638
Phone: (714) 670-SSDI (7734) - Fax: (714) 522-7424 : 50 AMP Designer’s Data Sheet: 200 VOLTS ' 0.055 Q FEATURES: ~ N-CHANNEL . fuged Sai ent with polysilicon gate POWER MOSFET . Ow (on) and high transconductance . : Excellent high temperature stability TO-258 (N) TO-259 (P) : Very fast switching speed . Fast recovery and superior dv/dt performance . Increased reverse energy capability . Low input and transfer capacitance for easy paralleling G + Ceramic Seals for improved hermeticity > . Hermetically sealed package ZS . * and Space Level screening available 6 WA . Replaces: IXTH50N20 Types 6 NZ MAXIMUM RATINGS: CHARACTERISTIC SYMBOL VALUE UNIT [conmestancen | T Operating and Storage Temperature -55 to +150 Total Device Dissipation @ TC=25°C 150 Total Device Dissipation @ TC=55°C 114 PACKAGE OUTLINE: TO-258 (N) PACKAGE OUTLINE: TO.259 Ata] PIN: DRAIN PIN 1: DRAIN PIN 2: SOURCE PIN 2: SOURCE PIN 3: GATE PIN 3: GATE #18 270, 188 _ $95 . :240[° MS 40 80 ‘270 i. ‘ J 240, T [8] aol? [685 1 Lf 125 Bsc a SE aes 120 @ 707 88 in ‘= & 285 Bsc 350
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SFF50N20N —_— SSDIll SFF50N20P _ SOLID STATE DEVICES, INC 14849 Firestone Boulevard. La Mirada,CA 90638 Phone: (714) 670-SSDI (7734) - Fax: (714) 522-7424 ELECTRICAL CHARACTERISTICS: @ Ty=25°C (Unless Otherwise Specified) RATING symeoL| win | rye | max _| UNIT Drain to Source Breakdown Voltage (VGS=0 V, 1D=250A) BVpss Vv Drain to Source on State Resistance (VGS=10 V, ID=60% Rated ID RDs(on) On State Drain Current (VDS >ID(on) X RDS(on) Max, VGS=10 V Gate Threshold Voltage (VDS=VGS, ID=4mA) Vast) 4.0 Vv Forward Transconductance (VDS >ID(on) X _RDS(on) Max, IDS=50% rated ID) 25 Zero Gate Voltage Drain Current (VDS=max rated voltage, VGS=0 V) 250 HA (VDS=80% rated VDS, VGS=0 V, TA=125°C) 1000 Gate to Source Leakage Forward| At rated VGS +100 Gate to Source Leakage Reverse -100 Total Gate Charge VGS=10 Volts Qg 190 220 Gate to Source Charge 50% rated vOS Qgs 35 50 Gate to Drain Charge 50% Rated ID Qga 95 120 Turn on Delay Time VOD 50% ta(on) 28 Rise Time 50% rated ID tr 83 Turn Off Delay Time RG=6.20 ta(off) 110 Fall Time VGS=10V tt 30 Diode Forward Voltage Vsb (IS=rated ID, VGS=0 V, TJ=25°C) Diode Reverse Recovery Time Toa is nsec Reverse Recovery Charge di/dt=100 A/usec 15 pe Input Capacitance VGS=0 Volts Ciss 4400 Output Capacitance VDS=25 Volts Coss 800 Reverse Transfer Capacitance f=1 MHz Crss 285 SAFE OPERATING AREA. (S.0.A.) ae A ey : SSS se ee a = LEU TTT TTT
5 SS ae
DRAIN TO SOURCE VOLTAGE (VOS) ane