F00109 SSDI | Alldatasheet
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Technical content
SOLID STATE DEVICES, INC one: - Fax: -
18 AMP
Designer's Data Sheet 200 VOLTS 0.18 FEATURES: N-CHANNEL POWER MOSFET . Rugged construction with polysilicon gate . Low DS(on) and high transconductance MILPACK . Excellent high temperature stability . Very fast switching speed . Fast recovery and superior dv/dt Performance . Increased reverse energy capability . Low input and transfer capacitance for easy paralleling . Ceramic Seals for improved hermeticity . Hermetically sealed surface mount package . TX, TXV and Space Level screening available . Replaces: IRF240 Types MAXIMUM RATINGS CHARACTERISTIC symeot_ | value | NT Drain o Source Voage [vos | 00 |v Fconinmsdanconen Operating and Storage Temperature -55 to +150 ct Total Device Dissipation @ TC=25'C 74 Total Device Dissipation @ TC=55'C 56 Watts PACKAGE OUTLINE: MILPACK 1 : 2.010 x 45. PN OURAN 0.514.005" 0.183. ant fart to nets — PIN 2: SOURCE coer re (TY 050° Ret. PIN 3: GATE - T ' se | ome | Ll) Els | 0.1308 005" EE as 1 0010 ee. L_ orae oor I TE: All ificati bject to chi ithout ‘SSDI prior to release.
14849 Firestone Boulevard La Mirada,CA 90638
Phone: (714) 670-SSDI (7734) Fax: (714) 522-7424 ELECTRICAL CHARACTERISTICS @ Tu=25 C (Unless Otherwise Specified) PRATING | spon | on [ye | max | unr | Drain to Source Breakdown Voltage (VGS=0 V, ID=250A) BVoss Drain to Source on State Resistance (VGS=10 V, ID= 10 A) Rosjon) On State Drain Current (VDS >ID(on) X RDS(on) Max, VGS=10 V 18 Gate Threshold Voltage (VDS=VGS, ID=250A) Vas(th) 4.0 v Forward Transconductance (VDS > 10 V, IDS= 10 A) Zero Gate Voltage Drain Current 'VDS=max rated voltage, VGS=0 Y 250 pA VDS=80% rated VDS, VGS=0 V, TA=125'C) 1000 Gate to Source Leakage Forward| Atrated VGS 100 Gate to Source Leakage Reverse -100 Total Gate Charge VGS=10 Volts Qg 40 Gate to Source Gharge 80% | rated V DS Qgs 7 Gate to Drain Charge 7 Qoa 21 Turn on Delay Time vob re ta(on) 24 Rise Time rated ID tr Z Turn Off Delay Time RG= 9.10 ta(ott) 68 Fall Time RD= 5.60 tr 54 Diode Forward Voltage (IS=rated ID, VGS=0 V, Td=25°C) Diode Reverse Recovery Time Pasa tre nsec Reverse Recovery Charge di/dt=100 A/usec QrA uc Input Capacitance VGS-=0 Volts 1300 Output Capacitance VDS=25 Volts 380 Reverse Transfer Capacitance f= 1 MHz 93 SAFE OPERATING AREA (S.0.A.) Seer seis HHA mestilomeeit| f H HH ey a
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== aij ieee ii eee tT cSt - Hi Er Se Hl tl i Co rn ov} LUTTE TEM TMI TTT on 1 10 100 1000 DRAIN TO SOURCE VOLTAGE (VDS)