F00101 SSDI | Alldatasheet
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SSDIl PRELIMINARY ; L SFF450C SOLID STATE DEVICES, INC s pats (ah roS80N (7784) Pax: (rs) 822-7824 jone: + Fax: -
13 AMP
Designer’s Data Sheet 500 VOLTS 3 0.409 FEATURES: N-CHANNEL POWER MOSFET = Rugged construction with poly silicon gate m Low RDS(on) and high transconductance TO-254C = Excellent high temperature stability m Very fast switching speed = Fast recovery and superior dv/dt performance = Increased reverse energy capability = Low input and transfer capacitance for easy paralleling IN TZ = Hermetically sealed power package LE VY ® Low inductance leads Ys = TX, TXV and pace, Level screening available ™ Replaces: IRF450 Types MAXIMUM RATINGS CHARACTERISTIC symeo._ | value | NT F cawsous vote SY mm a Operating and Storage Temperature a Total Device Dissipation @ TC=25°C Total Device Dissipation @ TC=55°C PACKAGE OUTLINE: CERAMIC TO-254 Fr .590 rer 1 .540+.010 PIN OUT: T .060+ .020 | —— PIN 1: DRAIN CG PIN 2: SOURCE 540.010 .500 4A) a PIN 3: GATE LIA a 9.144 ai 245. Ret .020 Ref 21 of 020, — 040k 0047" L J LL .845t.010—1 + .600 Ref SSDI prior to release.
SOLID STATE DEVICES, INC
14849 Firestone Boulevard: La Mirada,CA 90638
Phone: (714) 670-SSDI (7734)- Fax: (714) 522-7424 ELECTRICAL CHARACTERISTICS @ Ts=25 C (Unless Otherwise Specified) [RATING | spon | on [re | max | unre | Drain to Source Breakdown Voltage (VGS=0 V, ID=250,A) BVpss Drain to Source on State Resistance (VGS=10 V, ID=7.2 A) Rps(on) On State Drain Current (VDS >ID(on) X RDS(on) Max, VGS=10 V ID(on) Gate Threshold Voltage (VDS=VGS, Da250uAy Vasith) Forward Transconductance (VDS 2 50 V, IDS=7.2 A) 8.7 Zero Gate Voltage Drain Current (pgemax rated voltage, VGS=0 yy) 250 HA \\VDS=80% rated VDS, VGS=0 V, TA=125°C) 1000 Gate to Source Leakage Forward| At rated VGS 100 Gate to Source Leakage Reverse -100 Total Gate Charge VGS=10 Volts Qg 120 Gate to Source Sharge 80% rated YDS Qgs 17 Gate to Drain Charge fated Qga 64 Turn on Delay Time VoD s50% talon) 18 27 Rise Time 50% rated ID tr 4 66 Turn Oft Delay Time RG= 6.20 ta(off) 70 100 Fall Time RD=20W tt 40 60 Diode Forward Voltage 1.4 (IS=rated ID, VGS=0 V, TJ=25°C) Td=25°C Diode Reverse Recovery Time 580 nsec Reverse Recovery Charge di We lee | | & | 6.7 uc input Capacitance VGS=0 Volts 2700 Output Capacitance VDS=25 Volts 350 Reverse Transfer Capacitance f= 1 MHz 75 For thermal derating curves and other characteristic curves please contact SSDI Marketing Department.