F00083_15 SSDI | Alldatasheet
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SSDI PRELIMINARY : SOLID STATE DEVICES, INC
14849 Firestone Boulevard - La Mirada,CA 90638
Phone: (714) 670-SSDI (7734) - Fax: (714) 522-7424
8 AMP
Designer’s Data Sheet 500 VOLTS 0.850 FEATURES: N-CHANNEL POWER MOSFET + Rugged construction with poly silicon gate + Low RDS(on) and high transconductance MILPACK + Excellent high temperature stability ~ - Very fast switching speed - Fast recovery and superior dv/dt performance - Increased reverse energy capability + Low input and transfer capacitance for easy paralleling - Hermetically sealed surface mount power package + Low inductance leads - TX, TXV and Space Level screening available + Replaces: IRF440 Types MAXIMUM RATINGS: CHARACTERISTIC veo. | VALUE | UNT Continuous Drain Current e250 Amps @100°C Operating and Storage Temperature C Total Device Dissipation @ TC=25°C 74 Total Device Dissipation @ TC=55°C 55 Single Pulse Avalanche Energy J \\] Repetitive Avalanche Energy PACKAGE OUTLINE: MILPACK oom x 45. O38t4.005° eel Sete ees es SS} PIN OUT: ks a oer Ret i } PIN 1: DRAIN l Ls] oe | | PIN 2: SOURCE ad =T ris er aes | PIN 3: GATE [m2 | sper | | a ' ‘ene 1 TT 0.0108 oor ay NOTE: A ficati i h ith SSDI prior to release.
SOLID STATE DEVICES, INC 14849 Firestone Boulevard. La Mirada,CA 90638 Phone: (714) 670-SSDI (7734). Fax: (714) 22-7424 ELECTRICAL CHARACTERISTICS @ 1,=25°C (Unless Otherwise Specified) PRATING spon | on | rp | max | unr | Drain to Source Breakdown Voltage (VGS=0 V, 1D=250nA) Vv Temperature Coefficient of Breakdown Voltage ABVoss ATd 0.78 we Drain to Source on State Resistance @5A ~ 0.70 0.85 Gate Threshold Voltage Vas(th) (VDS=VGS, ID=250,A) 4.0 Vv Forward Transconductance (VDS >10V, IDS=5 A) 47 74 Zero Gate Voltage Drain Current (VDS=80% rated voltage, VGS=0 V) HA (VDS=80% rated VDS, VGS=0 V, TA=125°C) Gate to Source Leakage Forward| At rated VGS 100 Gate to Source Leakage Reverse -100 Total Gate Charge VGS=10 Volts Qg 27.3 34 68.5 Gate to Source Charge 50% rated VOS Qgs 2 6 12.5 Gate to Drain Charge = Qga 11 17 42 Turn on Delay Time VOD =50% td(on) 22 45 Rise Time ID=8A tr 27 49 Turn Off Delay Time RG=9.10 ta(off) 42 72 Fall Time tt 15 51 Diode Forward Voltage (IS=rated ID, VGS=0 V, TJ=25°C) Diode Reverse Recovery Time eae ter 700 nsec Reverse Recovery Charge di/dt=100 A/usec Qrr 8.9 pe Input Capacitance VGS=0 Volts 1300 Output Capacitance VDS=25 Volts 310 Reverse Transfer Capacitance f= 1 MHz 120 For thermal derating curves and other characteristic curves please contact SSDI Marketing Department.