F00081 SSDI | Alldatasheet
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D PRELIMINARY , SOLID STATE DEVICES, INC
14849 Firestone Boulevard: La Mirada,CA 90638
Phone: (714) 670-SSDI (7734): Fax: (714) 522-7424 10 AMP Designer's Data Sheet 400 VOLTS g 0.550 FEATURES: N-CHANNEL POWER MOSFET ™ Rugged construction with poly silicon gate @ Low RDS(on) and high transconductance TO-254C = Excellent high temperature stability @ Very fast switching speed ® Fast recovery and superior dv/dt performance ™ Increased reverse energy capability & : Low input and transfer capacitance for easy paralleling LZ lermetically sealed ceramic package S; ™ Low inductance leads 9 yy © TX, TXV and space, Level screening available ™ Replaces: IRF340 Types MAXIMUM RATINGS CHARACTERISTIC | svwpon | vate | unr | [ raintosource votage | Yos |g | ons [Tremaine ansoncaw fe || Total Device Dissipation @ TC=25°C 76 Total Device Dissipation @ TC=55°C 55 PACKAGE OUTLINE: CERAMIC TO-254 Fr .590 rer . | .540+.010 PIN OUT: T ToL .060+ .020 PIN 1: DRAIN | J ; 1 PIN 2 SOURCE 540+ .010 ~ bis — 9.144 4 Lows Ref ¢ .020 Ref __— .210.020,_ —
040.0047 L |
Owe LL .845t.010—1 + .600 Ref OTE: ifi SSDI prior to release.
PRELIMINARY SSDI| SOLID STATE DEVICES, INC Phone: (714) 670-SSDI (7734)- Fax: (714) 522-7424 ELECTRICAL CHARACTERISTICS @ 1J=25 C (Unless Otherwise Specified) [RATING sen] mn [tye | max | unr | Drain to Source Breakdown Voltage (VGS=0 V, ID=250A) BVpss Drain to Source on State Resistance (VGS=10 V, ID=60% Rated ID Rosvon) On State Drain Current (VDS >ID(on) X RDS(on) Max, VGS=10 V Gate Threshold Voltage (VDS=VGS, ID=250uAy VGSsi(th) Forward Transconductance (VDS > 50V, IDS=60% rated ID) 87 Zero Gate Voltage Drain Current (vbgemax rated voltage, VGS=0 by) 250 pA 'VDS=80% rated VDS, VGS=0 V, TA=125'C) 1000 Gate to Source Leakage Forward| At rated VGS 100 Gate to Source Leakage Reverse -100 Total Gate Charge VGS=10 Volts Qg 43 Gate to Source Sharge 80% rated 1VDS Qgs 6 Gate to Drain Charge =10 Qo 22 Turn on Delay Time vbD« SO% ta(on) 14 9 Rise Time ID=10A tr 27 30 Turn Off Delay Time RG=9.10 ta(ott) 50 74 Fall Time RD=202 tt 24 36 Diode Forward Voltage Vsp (IS=rated ID, VGS=0 V, TJ=25°C) TJ=25°C. Diode Reverse Recovery Time he trr 170 370 790 nsec Reverse Recovery Charge didtstbs Alieec QrR 1.6 3.8 8.2 uc Input Capacitance VGS=0 Volts 1300 Output Capacitance VDS=25 Volts 210 Reverse Transfer Capacitance f= 1 MHz 37 For thermal derating curves and other characteristic curves please contact SSDI Marketing Department.