F00057

F00057_15 SSDI | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 2

Technical content

SOLID STATE DEVICES, INC

14849 Firestone Boulevard - La Mirada,CA 90638

Phone: (714) 670-SSDI (7734). Fax: (714) 522-7424 45 AMP Designer’s Data Sheet 60 VOLTS 0.020Q FEATURES: N CHANNEL POWER MOSFET . Rugged construction with poly silicon gate - Low DS(on) and high transconductance MILPACK - Excellent high temperature stability Very fast switching speed Fast recovery and superior dv/dt Performance + Increased reverse energy capability - Low input and transfer capacitance for easy paralleling - Hermetically sealed power surface mount package + TX, TXV and Space Level screening available + Replaces: IRF054 Types MAXIMUM RATINGS CHARACTERISTIC symBo. | vaLUE | UNIT | [connesoancren P| Operating and Storage Temperature -55 to +150 Total Device Dissipation @ TC=25°C Total Device Dissipation @ TC=55°C PACKAGE OUTLINE: MILPACK PIN OUT: ao x45 PIN 2: SOURCE _;p el wR) ones 2: as PIN 3: GATE 7 | [= aa “ | c 0.080 * 220 L | Es | 0.130.005" ooiee.oor J NOTE: All ificati bj hi ith SSDI prior to release.

SOLID STATE DEVICES, INC \\ 14849 Firestone Boulevard: La Mirada,CA 90638 Phone: (714) 670-SSDI (7734): Fax: (714) 522-7424 ELECTRICAL CHARACTERISTICS @ T,=25 C (Unless Otherwise Specified) RATING symeot | mn | typ | max | UNtT Drain to Source Breakdown Voltage (VGS=0 V, |D=1mA) v Drain to Source on State Resistance @31A 0.020 (VGS=10 V, @45A 0.022 On State Drain Current (VDS >ID(on) X RDS(on) Max, VGS=10 V Gate Threshold Voltage (VDS=VGS, ID=250A) 2.6 Forward. (ony DS(on) Me ( >ID(on (on) Max, 25) IDS=35A) Sto) Zero Gate Voltage Drain Current (VDS= 80%max rated vonage, VGS=0 V) pA (VDS=80% rated VDS, VGS=0 V, TA=125°C) Gate to Source Leakage Forward| trated VGS 100 Gate to Source Leakage Reverse -100 Total Gate Charge VGS=10 Volts Qg 80 180 “| Gate to Source Sharge 80% rated VDS Qgs 10 45 Gate to Drain Charge Rated ID Qga 34 105 Turn on Delay Time VDD 5% ta(on) 30 33 Rise Time ID=45A tr Ba 180 urn elay Time RG<6.20 td(off) Fall Time . tt 30 100 Diode Forward Voltage Vsp (IS=rated ID, VGS=0 V, TJ=25°C) . TJ=25°C Diode Reverse Recovery Time = 280 nsec Input Capacitance VGS=0 Volts Ciss Output Capacitance VDS=25 Volts Coss 4600 Reverse Transfer Capacitance f= 1 MHz Crss zn For thermal derating curves and other characteristic curves please contact SSDI Marketing Department.