F00037_15 SSDI | Alldatasheet
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SOLID STATE DEVICES, INC
14849 Firestone Boulevard - La Mirada,CA 90638 an 4
Phone: (714) 670-SSDI (7734) -_ Fax: (714) 522-7424 a
28 AMP
Designer's Data Sheet 100 VOLT 0.077 Q FEATURES: N-CHANNEL ; POWER MOSFET - Rugged construction with poly silicon gate - Low RDS(on) and high transconductance MILPACK - Excellent high temperature stability + Very fast switching speed - Fast recovery and superior dv/dt performance - Increased reverse energy capability - Low input and transfer capacitance for easy paralleling - Hermetically sealed power surface mount package - TX, TXV and Space Level screening available + Replaces: IRF140 Types MAXIMUM RATINGS: CHARACTERISTIC SYMBOL value | uni [conmowonncwen TT | Operating and Storage Temperature -55 to +175 Total Device Dissipation @ TC=25°C 74 Total Device Dissipation @ TC=55°C 56 PACKAGE OUTLINE: MILPACK PIN OUT: assis. cos Dead Sue onze rics) —i PIN 1: DRAIN Ce abe Ref. et a | 2 oe | 2 oso 2 || | EJs | \\ 0.150.005 es ao i C017 Max. i aoros.cor S NOTE: All ificati bject to ch ithout | SSDI prior to release.
PREL:MINARY . SSDI a 14849 Firestone Boulevard. La Mirada,CA 90638 Phone: (714) 670-SSDI (7734) - Fax: (714) 522-7424 ELECTRICAL_CHARACTERISTICS @ Ty=25°C (Unless Otherwise Specified) RATING sywaot| wn | WP [max | unr | Drain to Source Breakdown Voltage (VGS=0 V, ID=250yA) Drain to Source on State Resistance (VGS=10 V, ID=60% Rated ID Rps(on) 0.077 On State Drain Current (VDS >ID(on) X RDS(on) Max, VGS=10 V Gate Threshold Voltage (VDS=VGS, ID=250,A) Vas(th) 24 Vv Forward Transconductance (VDS >ID(on) X RDS(on) Max, 87 S(0) IDS=60% rated ID) Zero Gate Voltage Drain Current (VDS=max rated voltage, VGS=0 V) 250 pA (VDS=80% rated VDS, VGS=0 V, TA=150°C) 1000 Gate to Source Leakage Forward| At rated VGS. 100 Gate to Source Leakage Reverse -100 Total Gate Charge VGS=10 Volts Qg 40 60 Gate to Source Charge 50% rated VOS Qgs 8 12 Gate to Drain Charge ‘ated ID Qga 19 28 Turn on Delay Time VDD =r td(on) 15 23 Rise Time rated ID tr 72 110 Turn Off Delay Time AG= 9.10 ta(ott) 40 80 Fall Time tt 50 75 Diode Forward Voltage Vspb (IS=rated ID, VGS=0 V, TJ=25°C) . 7 TJ=25°C Diode Reverse Recovery Time = ter 70 150 300 nsec Reverse Recovery Charge dildta 100 usec Qar 0.44 0.91 1.9 uc Input Capacitance VGS=0 Volts 1500 Output Capacitance VDS=25 Volts 500 Reverse Transfer Capacitance f= 1 MHz 90 SAFE OPERATING AREA 5.0.4.) Te = 75 C, 0c. coon re See 3 vo PC SS Fg) ee a A OO ont LT TT TTT ” ORAM To source voLTAc (V8) “