F00031 SSDI | Alldatasheet
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SS D | PRELIMINARY A SSD _ SFFO44J SOLID STATE DEVICES, INC yi
14849 Firestone Boulevard: La Mirada,CA 90638
Phone: (714) 670-SSDI (7734): Fax: (714) 522-7424 35 AMP Designer’s Data Sheet 60 our FEATURES: N-CHANNEL POWER MOSFET m™ Rugged construction with poly silicon gate = Low DS(on) and high transconductance TO-257 ® Excellent high temperature stability = Very fast switching speed = Fast recovery and superior dv/dt Performance ™ Increased reverse energy capability ® Low input and transfer capacitance for easy paralleling = Hermetically sealed package = TX, TXV and Space Level screening available ™ Replaces: IRFY044 Types MAXIMUM RATINGS CHARACTERISTIC | Drainto source vonage | vos || ons i [conmoisoancuen | || Operating and Storage Temperature Cc ee Total Device Dissipation @ TC=25°C. Total Device Dissipation @ TC=55°C. PACKAGE OUTLINE: TO-257 .420 eHONL 107 3304 at 945 PIN OUT: . . 035 PIN 1: DRAIN T al PIN 2: SOURCE 665 T PIN 3: GATE 537 645 430 927 ‘410 f | “ .750 1 3 kb ay x 9035 Ie 2 x100 BSC -120 BSC 2025 SSDI prior to release.
SOLID STATE DEVICES, INC Phone: (714) 670-SSDI (7734)- Fax: (714) 522-7424 ELECTRICAL CHARACTERISTICS @ Tu=25 C (Unless Otherwise Specified) [RATING = symp] oN | ty | max Drain to Source Breakdown Voltage (VGS=0 V, ID=250A) BVpss Drain to Source on State Resistance (VGS=10 V, ID= 33 A) 0.028 On State Drain Current (VDS >ID(on) X RDS(on) Max, VGS=10 V Gate Threshold Voltage (VDS=VGS, ID=250yA) Vasith) Forward Transconductance (VDS > 50V, IDS= 33 A) Zero Gate Voltage Drain Current (ybgemax rated voltage, VGS=0 Y) Ipss 250 pA 'VDS=80% rated VDS, VGS=0 V, TA=150°C) 1000 Gate to Source Leakage Forward Atrated VGS 100 Gate to Source Leakage Reverse -100 Total Gate Charge VGS=10 Volts Qg 69 100 Gate to Source Bharge 80% rated N DS Qgs 14 21 Gate to Drain Charge ated | Qga 39 58 Turn on Delay Time ver nad td(on) 21 32 Rise Time rated ID tr 140 210 Turn Off Delay Time RG=9.10 ta(oth) 50 7s Fall Time tt 88 130 Diode Forward Voltage Vsp (IS=rated ID, VGS=0 V, TJ=25°C) TJ=25°C Diode Reverse Recovery Time s 54 110 nsec Reverse Recovery Charge Piety vie | gs | 0.23 0.53 ue Input Capacitance VGS=0 Volts Ciss 2500 Output Capacitance VDS=25 Volts Coss 1200 Reverse Transfer Capacitance f= 1 MHz Crss 310 For thermal derating curves and other characteristic curves please contact SSDI Marketing Department.