F00017 SSDI | Alldatasheet
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14849 Firestone Boulevard. La Mirada,CA 90638 5 Phone: (714) 670-SSDI (7734) - Fax: (714) 522-7424 ae H
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Designer’s Data Sheet 100 VOLTS 0.16 Q FEATURES: N-CHANNEL POWER MOSFET - Rugged construction with poly silicon gate + Low RDS(on) and high transconductance MILPACK + Excellent high temperature stability - Very fast switching speed - Fast recovery and superior dv/dt performance + Increased reverse energy capability - Low input and transfer capacitance for easy paralleling + Hermetically sealed power surface mount package - TX, TXV and Space Level screening available - Replaces: IRF130 Types MAXIMUM RATINGS: CHARACTERISTIC SYMBOL VALUE Continuous Drain Current @ TC=25°C F =» | Ff @ TC=100°C Operating and Storage Temperature -55 to +150 Total Device Dissipation @ TC=25°C 63 Total Device Dissipation @ TC=55°C 48 PACKAGE OUTLINE: MILPACK BRAIN: PIN Seva SOURCE: PIN 2 i_| im (Res) rm GATE: PIN 3 a a ser Rat T H] Lee] emene | LL | 0.130.005" Oar ae i sont “fo | ovat oor J NOTE: All ificati bj hi i SSDI prior to release.
SOLID STATE DEVICES, INC
14849 Firestone Boulevard - La Mirada,CA 90638
Phone: (714) 670-SSDI (7734) -_ Fax: (714) 522-7424 ELECTRICAL.CHARACTERISTICS. @ Ty=25°C (Unless Otherwise Specified). RATING symeot| min | tye | max | UNIT Drain to Source Breakdown Voltage (VGS=0 V, ID=250,1A) BVpss v Temperature Coefficient of Breakdown Voltage oe ee a ee ~ATT Drain to Source on State Resistance !D=9A 0.13 0.18 (VGS=10 V) ID=11A 0.14 0.21 On State Drain Current (VDS >ID(on) X RDS(on) Max, VGS=10 V Gate Threshold Voltage (VDS=VGS, IDs250uAy Forward Transconductance {yps >ID(on) X _RDS(on) Max, 7 DS=60% rated ID) Zero Gate Voltage Drain Current (VBe=eoee tated voltage, VGS=0 V) . pA 'VDS=80% rated VDS, VGS=0 V, TA=125°C) Gate to Source Leakage Forward At rated VGS 100 Gate to Source Leakage Reverse -100 Total Gate Charge VGS=10 Volts Qg 35 Gate to Source Charge 50% rated VDS Qgs 10 Gate to Drain Charge Rated ID Qga 15 Turn on Delay Time VDD=50% t .! 35 Rise Time rated VOS en ° 20 Turn Off Delay Time = ta(off Fall time” RG=7.50 on 32 69 Diode Forward Voltage TJ=25°C Diode Reverse Recovery Time IFsrated ID 120 “o Reverse Recovery Charge di/dt=100 A/usec 0.7 Ls Input Capacitance VGS=0 Volts 650 Output Capacitance VDS=25 Volts 250 Reverse Transfer Capacitance f= 1 MHz 44 SAFE OPERATING AREA (S.0.A.) Te = 25 C, 0.C. CONN 0 = ae —— sess eae Po 6 yp Gee TT Se a A g LO Pr a ot - UM TTT TT) o ORAM TO SOURCE VOLTAGE (VOS) ‘0