F00011 SSDI | Alldatasheet
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SSD D | PRELIMINARY _—eeee SFF230/5 SOLID STATE DEVICES, INC Ges ; jone: + Fax: =
9 AMP
Designer’s Data Sheet 200) ours FEATURES: N-CHANNEL . Rugged construction with poly silicon gate POWER MOSFET - Low DS(on) and high transconductance - Excellent high temperature stability TO-5 - Very fast switching speed + Fast recovery and superior dv/dt performance KS + Increased reverse energy capability (F - Low input and transfer capacitance for easy paralleling 4 - Hermetically sealed package / / f - Available in both hot case and isolated versions / / / + Ideal for low power applications // i + TX, TXV and Space, Level screening available f + Replaces: IRF230 Types MAXIMUM RATINGS CHARACTERISTIC SYMBOL VALUE UNIT Operating and Storage Temperature -55 to +150 Total Device Dissipation @ TC=25°C 25 Total Device Dissipation @ TA=25°C 19 PACKAGE OUTLINE: TO-5 PIN OUT: 100" 260" nin, 3 PIN 1: SOURCE HO Ta oa. * PIN 2: GATE anf Lt PIN 3: DRAIN t = O10 4 los 45° typ. \\ 2.021" SE NN RO.007* max. ange "Ovi" 0.034" of 12. 1 aes 0.028 0.050" max. o9e9" NOTE: All ificati bj h ith SSDI prior to release.
SFF230/5 SOLID STATE DEVICES, INC 4 14849 Firestone Boulevard - La Mirada,CA 90638 Phone: (714) 670-SSDI (7734). Fax: (714) 522-7424 ELECTRICAL CHARACTERISTICS @ Ty=25°C (Unless Otherwise Specified) RATING syupou| win | TP | max | unm | Drain to Source Breakdown Voltage (VGS=0 V, ID=250pA) BVpss 200 Vv Drain to Source on State Resistance (VGS=10 V, ID= 5 A) On State Drain Current (VDS >ID(on) X RDS(on) Max, VGS=10 V Gate Threshold Voltage (VDS=VGS, IDS250uAy Vasith) v Forward Transconductance (VDS >ID(on) X RDS(on) Max, gfs IDS=5 A) Zero Gate Voltage Drain Current wos-max rated voltage, VGS=0 V) 250 WA (VDS=80% rated VDS, VGS=0 V, TA=125°C) 1000 Gate to Source Leakage Forward At rated VGS 100 Gate to Source Leakage Reverse -100 ‘| Total Gate Charge VGS=10 Volts Qg 39 Gate to Source Charge 80! “erated V DS Qgs _ Gate to Drain Charge hd Qga _ Turn on Delay Time voD om td(on) 30 Rise Time 50% rated ID tr 50 Turn Off Delay Time RG= 150 ta(off) 50 Fall Time tt 40 Diode Forward Voltage Vv (IS=rated ID, VGS=0 V, TJ=25°C) Diode Reverse Recovery Time Foals nsec Reverse Recovery Charge di/dt=100 A/usec uc Input Capacitance VGS=0 Volts Ciss 600 800 Output Capacitance VDS=25 Volts Coss 250 450 Reverse Transfer Capacitance f= 1 MHz Crss 80 150 SAFE OPERATING AREA (S.0.A.) Te= 25 C, 0.¢. coon a | 0 — See g ER pC TO ee Ea Af ETE RIINVAAal wo EL UIE TTT TIT UI "Ot 1 10 100 1000 DRAIN TO SOURCE VOLTAGE (VDS)