F00001_15 SSDI | Alldatasheet
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SOLID STATE DEVICES, INC Y one: + Fax: - 40* AMP Designer's Data Sheet 100 VOLTS 0.055 FEATURES: N-CHANNEL POWER MOSFET ® Rugged construction with poly silicon gate = Low RDS (on) and high transconductance 28 PIN CLCC = Excellent high temperature stability = Very fast switching speed = Fast recovery and superior dv/dt Performance ™ Increased reverse energy capability = Low input and transfer capacitance for easy paralleling = Hermetically sealed surface mount package ® TX, TXV and Space Level screening available ™ Replaces: SMP40N10 Types MAXIMUM RATINGS CHARACTERISTIC SYMBOL VALUE UNIT Fconmnecancrew | Operating and Storage Temperature Total Device Dissipation @ TC=25°C. Total Device Dissipation @ TA=95°C. PACKAGE OUTLINE: 28 PIN CLCC PIN OUT: 0.030 TYP. SOURCE: 1, 15- 28 040 x 45 CHAM 3 PLCS. +| o.010 +7-001 + i_ 0.050 TYP. DRAIN: 5-11 GATE: 2, 3, 13, 14 | 0.030 NOTE: fo All Drain/Source Pins must be connected ‘on the PC Board in order to maximize current capabili gnd mines RLS(on) oN 26 4 Lain wae 0038 PIN 1 PINT 0.010 TYP. 020 x 45 CHAM 1 PLE * Rating based on size of chip. Device rating may vary depending on mounting and heatsink conditions. Consult SSDI Marketing department for thermal derating details. NOTE: All ificat h ‘SSDI prior to release.
SOLID STATE DEVICES, INC
14849 Firestone Boulevard: La Mirada,CA 90638
Phone: (714) 670-SSDI (7734) - Fax: (714) 522-7424 ELECTRICAL CHARACTERISTICS @ Ty=25 C (Unless Otherwise Specified) RATING sympou| MN | Tye | MAX | UNIT Drain to Source Breakdown Voltage Drain to Source on State Resistance (VGS=10 V, ID= 25 A) Rosjon) VDS=5V, VGS=10 V) Gate Threshold Voltage (VDS=VGS, ID=250uA) Forward Transconductance (VDS=15V, IDS=60% rated ID) Zero Gate Voltage Drain Current 'VDS=80V, VGS=0 M4 pA VDS=80% rated VDS, VGS=0 V, TJ=125'C) Gate to Source Leakage Forward | At rated VGS 100 | aw | Gate to Source Leakage Reverse Total Gate Charge AGS=10 Volts, Qs 8 120 Gate to Source Charge Rated ID Qgs 30 50 Gate to Drain Charge Qga Tj=100°C. Turn on Delay Time vbD=25v td(on) BA Bon Rise Time VGEN=10V tr 40 150 Turn Off Delay Time 'D=20A ta(ott) 20 400 Fall Time RG=502 tt IS=rated ID, VGS=0 V, TJ=25°C) TJ=25°C Diode Reverse Recovery Time \\F=rated ID ed nsec Reverse Recovery Charge di/dt=100 A/ sec . ue . 3000 5000 Input Capacitance VGS=0 Volts Output Capacitance VOS=25 Volts 3 2500 Reverse Transfer Capacitance f= 1 MHz For thermal derating curves and other characteristic curves please contact SSDI Marketing Department. NOTES: * Rating based on size of chip. Device rating may vary depending on mounting and heatsink conditions. Consult SSDI Marketing department for thermal derating details. ** Due to package resistance; all Source/Drain pins must be connected on the PC Board in order to obtain the lowest RDS(on) possibie.