EVOS ADVANCEDENERGY | Alldatasheet

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©2023 Advanced Energy Industries, Inc. The eVoS™ ME asymmetric bias waveform generator is designed to achieve direct control of wafer-surface voltage and resulting ion energy distributions (IED) in plasma-based etch and deposition processes. The eVoS system comprises an agile high voltage power supply combined with innovative asymmetric waveform generating technology to establish and control wafer surface potential. The asymmetric output of the eVoS eliminates the limitations and restrictions of wafer biasing inherent to sinusoidal RF bias applications. Fast digital metrology and novel control algorithms enable the production of near mono-energetic IEDs.

FEATURES

 Ability to produce near mono-energetic ion energy distributions  Pulse capability with necessary input and output signals for synchronization  Direct switch-module integration replaces existing RF matching networks  Real-time bias voltage and ion current feedback via high-speed metrology  Adaptablility to standard chamber interface BENEFITS  Direct control of wafer bias voltage and resulting ion energies  Reduced power through use of the “right power,” only delivering the useful ion energy  Significantly increased etch selectivity for shorter processes and straighter, deeper  Enhanced ion energy selection/discrimination compared to RF bias methods Step Voltage (Max) 3 kV Step Voltage (Min) 500 V Peak-to-Peak Voltage 5 kV DC Current 6 A AT A GLANCE eVoS ME Asymmetric bias waveform generator for direct control of substrate voltage and ion energy

For international contact information, visit advancedenergy .com. sales.support@aei.com +1 970 221 0108 Specifications are subject to change without notice. Not responsible for errors or omissions. ©2023 Advanced Energy Industries, Inc. All rights reserved. Advanced Energy®, eVoS TM , and AE® are U.S. trademarks of Advanced Energy Industries, Inc. TRUST TECHNICAL DATA General (Nominal Chuck 3.5 nF) Vstep Max 3 kV Vstep Min 500 V DC Current 6 A max Pulse Capability (Main/Satellite) 10 Hz to 5 kHz 10% to 90% duty 100 µs min pulse interval Multi-Level Operation Max 8 levels max 100 µs min interval for each level including 50 µs transition time Switch Module Output Connection 20 mm nominal socket/slug, customizable Communication Ports Ethernet (RJ45), serial (micro-USB, RS-232) Aux Power 24 VDC Communication Protocol AEBus Cooling Water: 2 gpm, +5°C to +35°C Output Fundamental Frequency 200 kHz to 1.1 MHz Dimensions Custom chamber mount ENG-PPG-eVosME-235-01 092223 DC Power Supply Input Power 360 to 480 VAC 3Φ 60 to 45 A 50/60 Hz Dimensions and Mounting 8 U 19" rack mount DC Current 6 A max Output Connection Triax cable ≤ 9.1 m (30') long Cooling Water: 2.5 gpm, +5°C to +35°C Forced Air