E710AHF SEMTECH | Alldatasheet

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Technical content

EDGE HIGH-PERFORMANCE PRODUCTS 1 www.semtech.com Edge710

500 MHz Pin Electronics Driver,

Window Comparator, and Load Description Features Functional Block Diagram

Applications

Revision 2 / December 1, 2000 The Edge710 is a totally monolithic ATE pin electronics solution manufactured in a high-performance complementary bipolar process. In Automatic Test Equipment (ATE) applications, the Edge710 incorporates a driver, a load, and a window comparator suitable for very fast bidirectional channels in VLSI, Mixed-Signal, and Memory test systems. The three-statable driver is capable of generating 9V swings over a 12V range. In addition, 13V super voltage may be obtained under certain operating conditions. Separate rise and fall edge adjustments support both high speed and low speed applications, and allow for superior rise and fall time matching. An input power down mode allows extremely low leakage current in HiZ. The load supports programmable source and sink currents of ± 35 mA over a 12V range, or it can be completely disabled. The source current, sink current, and commutating voltage are all independently set. In addition, the load is configurable and may be used as a programmable voltage clamp. The window comparator spans a 12V common mode range, tracks input signals with edge rates greater than 6 V/ns, and passes sub-ns pulses. An input power down mode allows for extremely low leakage measurements. The inclusion of all pin electronics building blocks into a 52 lead MQFP (10 mm body w/ internal heat spreader) offers a highly integrated solution that is traditionally implemented with multiple integrated circuits or discretes.

  • Fully Integrated Three-Statable Driver, Window Comparator, and Dynamic Active Load
  • 12V Driver, Load, Compare Range
  • 13V Super Voltage Capable
  • ± 35 mA Programmable Load
  • Comparator Input Tracking >6V/ns
  • Leakage (L+D+C) < 1 µA (normal mode)
  • Leakage (L+D+C) < 25 nA (IPD mode)
  • Small footprint (52 pin MQFP)
  • VLSI Test Equipment
  • Mixed-Signal Test Equipment
  • Memory Testers (Bidirectional Channels)
  • ASIC Verifiers BIAS DVH DHI DHI* DVR_EN DVR_EN* DVL IPD_D QA* QA PECL IPD_C QB QB* ISC_IN VCM_IN VCM_OUT_A VCM_OUT_B ISK_IN LD_EN LD_EN* RADJ DOUT FADJ CVA VINP CVB BRIDGE_SC LOAD BRIDGE_SK 1KΩ 1KΩ VCC VEE

2 2000 Semtech Corp. www.semtech.com EDGE HIGH-PERFORMANCE PRODUCTS Edge710 PIN Description emaNniP# niPn oitpircseD revirD TUOD0 3. tuptuOrevirD *IHD/IHD3 1,21 rohgihrevirdehtenimretedhcihwsniplatigidtupnilaitnereffidegatlovediW .levelwol *NE_RVD/NE_RVD5 1,41 evitcagniebrevirdehtlortnochcihwsniplatigidtupnilaitnereffidegatlovediW .etatsecnadepmihgihaniro LVD,HVD9 1,02 woldnahgihrevirdehtenimretedhcihwstupniegatlovgolanaecnadepmihgiH .level PAC_HVD4 2 .HVDotdetcennocebdluohsroticapacFp001A.nipnoitasnepmocpmapO PAC_LVD5 2 .LVDotdetcennocebdluohsroticapacFp001A.nipnoitasnepmocpmapO JDAF,JDAR6 1,71. semitnoitisnartrevirdehtenimretedhcihwstnerructupnI SAIB8 1. tnerrucsaiblanretninasteshcihwtupnitnerrucgolanA D_DPI4 3 secuderdnanwodrevirdehtswolshcihwlortnocnwodrewoptupnirevirdLTT .tnerrucegakaelZiHrevirdeht rotarapmoC PNIV3 3. srotarapmocfotupnievitisopehtottupniegatlovgolanA BVC,AVC1 5,05. sdlohserhtrotarapmocehtteshcihwstupnigolanA *AQ/AQ *BQ/BQ 5,6 11,01 .BdnaAsrotarapmocfostuptuolatigid)LCEPro(LCElaitnereffiD C_DPI5 3t ub,nwodrotarapmocehtswolshcihwtupninwodrewoptupniLTT .tnerrucsaibPNIVehtsecuderyltnacifingis LCEP8 ,7 hcihwsegatstuptuorotarapmocehtroflevelylppusrewopdereffubnU .slevellatigidLCEProLCErehtiesehsilbatse daoL DAOL8 3. tuptuOdaoL *NE_DL/NE_DL3 ,2 .daolehtelbasiddnaetavitcahcihwstupnilaitnereffidegatlovediW NI_MCV4 4 .egatlovgnitatummocehtsmargorptahttupniegatlovgolanaecnadepmihgiH NI_KSI,NI_CSI5 4,84 .stnerrucknisdnaecruosdaolehtmargorphcihwstupnitnerrucgolanA muminimhguorhtecruostnerrucroegatlovlanretxeotdetcennocebdluohS 005 Ω .srotsiserseires PAC_MCV3 4. nipnoitasnepmocpmaporeffubgnitatummoC A_TUO_MCV B_TUO_MCV .snipegatlovgnitatummoC CS_EGDIRB KS_EGDIRB tnerruclanretniehtssapybtahtegdirbtuptuoehtotsnoitcennocegdirbedoiD .secruos

3 2000 Semtech Corp. www.semtech.com EDGE HIGH-PERFORMANCE PRODUCTS Edge710 PIN Description (continued) emaNniP# niPn oitpircseD ,seilppuSrewoP suoenallecsiM EDOHTAC EDONA .gnirtsedoidlamrehtpihc-noehtfoslanimreT CCV9 4,23,13,4. levelylppusrewopevitisoP EEV2 5,92,82,1. levelylppusrewopevitageN DNG, 63,22,12,9 74,64,73 .dnuorGeciveD C/N3 2. tcennocoN

52 MQFP

BRIDGE_SK LOAD GND GND IPD_C IPD_D VINP VCC VCC DOUT VEE VEE CATHODE VEE LD_EN LD_EN* VCC QA* QA PECL PECL GND QB QB* DHI DHI* VEE CVB CVA VCC ISC_IN GND GND ISK_IN VCM_IN VCM_CAP VCM_OUT_A VCM_OUT_B BRIDGE_SC DVR_EN DVR_EN* FADJ RADJ BIAS DVL DVH GND GND N/C DVH_CAP DVL_CAP ANODE

Do NOT leave DRV_EN / DRV_EN* floating. driver will force DVL when active. Do NOT leave DHI / DHI* floating. Table 1. Driver Control Truth Table FADJ settings, and cannot be set independently.

5 2000 Semtech Corp. www.semtech.com EDGE HIGH-PERFORMANCE PRODUCTS Edge710 Circuit Description (continued) Driver Slew Rate Adjustment The driver rising and falling transition times are independently adjustable. The RADJ and FADJ pins are analog current inputs which establish the driver rise and fall times. Ideally, an external current source would be used for RADJ and FADJ. However, for most applications (where the rise and fall times are fixed), precision external resistors to a positive voltage are acceptable. The currents into RADJ and FADJ follow the equation: RADJ, FADJ = (VCC - 0.7) / (Rext + 1.5). Input Power Down IPD_D is a TTL compatible input which affects both the driver speed as well as high impedance leakage. With IPD_D = 0, the driver functions normally. With IPD_D = 1, the driver is in IPD mode, where it still functions, although with slower rise and fall times, but with an extremely low HiZ leakage current. Do not leave IPD_D floating !! If IPD_D is not used, connect it to ground. LOAD > VCM_IN 1.5KΩ Rise/Fall Adjust Current RADJ (FADJ) Load The load is capable of sourcing and sinking at least 35 mA dynamically, or being placed into a high impedance state. The load may also be configured with separate commutating voltage to act as a programmable voltage clamp. In addition, the load may act as a 50 Ω transmission line termination. Load Enable The load enable input determines whether the load is active or in high impedance. If LD_EN is more positive than LD_EN*, the load is active and is capable of sourcing and sinking currents. If LD_EN is more negative than LD_EN*, the load is placed into a high impedance state. LD_EN / LD_EN* are "Flex In" - wide voltage differential inputs capable of receiving ECL, TTL, CMOS, or custom levels. Single-ended operation is supported by connecting the inverting input to the appropriate DC threshold level. Do NOT leave LD_EN / LD_EN* floating. Commutating Voltage VCM_IN is a high input impedance analog voltage input which sets the commutating voltage of the load. If LOAD is more positive than VCM_IN, the bridge will sink current from the DUT into the load. If LOAD is more negative than VCM_IN, the load will source current from the load into the DUT. LOAD < VCM_IN VCM_IN DUT VCM_IN DUT

6 2000 Semtech Corp. www.semtech.com EDGE HIGH-PERFORMANCE PRODUCTS Edge710 Circuit Description (continued) Source and Sink Current Levels The amount of current that the diode bridge can source and sink is adjustable from 0 mA to 35 mA. The source and sink levels are separate and independent. ISC_IN and ISK_IN are current controlled inputs whose voltage level is held very close to ground (<100 mV variation) over the entire legal current input range. There is a nominal gain of 20 between the ISC_IN current and the bridge source current. ISOURCE = 20 * ISC_IN There is a nominal gain of –20 between the ISK_IN current and the bridge sink current. ISINK = –20 * ISK_IN Because the inversion creates a 180˚ phase shift between ISK_IN and ISINK, there is a tendency toward instability. A minimum of 500 W of external series resistance should be used between an external voltage or current source and the ISC_IN and ISK_IN pins to ensure stability. Stray capacitance at the ISK_IN pin should be kept to a minimum. PCB layout should minimize coupling between ISK_IN and LOAD. Caution: The ISKIN and ISCIN inputs are designed for positive current between 0 mA and 1.75 mA flowing into the part. Care should be taken to insure that current is never required to flow out of the part on these two nodes. Commutating Voltage Compensation The VCM_CAP pin is an op amp compensation node that requires a fixed .01 µF chip capacitor (with good high frequency characteristics) to ground. This capacitor is used to compensate an internal node on the on-chip buffer for the commutating voltage input. Split Load The VCM_OUT_A is the actual commutating voltage generated by the on-chip buffer. VCM_OUT_A is also connected to the upper half of the diode bridge, and is responsible for sinking the programmed source current when the load is sinking current from the DUT. VCM_OUT_B is connected to the lower half of the diode bridge, and is responsible for providing the sink current when the load is sourcing current to the DUT. VCM_OUT_B does NOT have an on-chip buffer. To configure the load as a standard active diode bridge, connect VCM_OUT_A and VCM_OUT_B together off-chip. Or, to configure the load as a split load, an external buffer must be used for VCM_OUT_B. External Bridge Connections Access to the top and bottom of the diode bridge is granted through a 1 KW resistor. Pins BRIDGE_SC and BRIDGE_SK allow external current sources to be used instead of the internal I_SOURCE and I_SINK sources. These external pins are useful when extremely accurate source and sink currents are required for low current operation. 1KΩ 1KΩ BRIDGE_SC I_SOURCE I_SINK LOAD BRIDGE_SK VCM_OUT_B VCM_OUT_A VCM_IN

7 2000 Semtech Corp. www.semtech.com EDGE HIGH-PERFORMANCE PRODUCTS Edge710 Circuit Description (continued) Window Comparator Two comparators are connected on-chip to form a window comparator to determine whether the DUT is high, low, or in an indeterminant state. VINP is tied to the positive inputs of both comparators. The selection of either comparator A or B for the DUT high versus the DUT low is arbitrary. However, because the positive input is used on both comparators, the comparator used to detect DUT low will have an inversion at it digital outputs. The figure below shows the correct polarity for the comparator connections. Thresholds CVA and CVB are the two comparator threshold levels. These inputs are high impedance voltage controlled inputs that determine at which VINP voltage the comparators will change output states. PECL Level Capability PECL is the power supply level for the output stage of the comparators. When connected to ground, the comparator outputs will be standard ECL outputs. However, by making PECL more positive, QA / QA* and QB / QB* will track PECL and also become more positive. By raising these voltage levels, the comparators may connect directly with CMOS ICs. QA* QA QB QB* IPD_C PECL CVA VINP CVB The power supply driving the PECL pin must be capable of sourcing all the current flowing out of the QA/QA* and QB/ QB* open emitter outputs. Comparator Input Protection VINP connect to over-voltage diodes connected to the positive and negative power supplies. These diodes are sized to handle up to 100 mA current. Thermal Monitor An on-chip thermal diode string of five diodes in series exists (see figure below). This string allows accurate die temperature measurements. An external bias current of 100 µA is injected through the string, and the measured voltage corresponds to a specific junction temperature with the following equation: Tj[°C] = {(ANODE - CATHODE)/5 – .7752} / (–.0018). ANODE CATHODE Temperature Coefficient = –9 mV / ˚C Bias Current

8 2000 Semtech Corp. www.semtech.com EDGE HIGH-PERFORMANCE PRODUCTS Edge710

Application Information

The Edge710 may be used to generate a super voltage level up to 13V at the driver output. To generate this high voltage, an analog input mux may be used to switch between the normal high and low drive levels, and a super voltage level. Certain Power Supply conditions must be met to support this functionality. Extremely Low Leakage Usage The Edge710 is capable of supporting total load + drive + comparator leakage ≤ ~15 nA. This low leakage mode may be very useful during PMU operation if the pin electronics are not isolated by a relay, thus eliminating the need for 1 relay per pin. To realize this low leakage, the following conditions must be met: 1. IPD_D = 1 (place the driver in "power down" mode) 2. IPD_C = 1 (place the comparator in "power down" mode) 3. CVA, CVB ≥ VINP (program the comparator thresholds ≥ any expected voltage at the comparator inputs.) DVH DVL S/V S/V SELECT

710 D_OUT

A B Y B A Y

9 2000 Semtech Corp. www.semtech.com EDGE HIGH-PERFORMANCE PRODUCTS Edge710

Package Information

D D A B

0.25 C A – B D

e E SEE DETAIL "A" TOP VIEW 5 7 5 7 52 7 ZD ZE 4X 0.20 C A – B D COO BOTTOM VIEW

10 2000 Semtech Corp. www.semtech.com EDGE HIGH-PERFORMANCE PRODUCTS Edge710 Package Information (continued) –A, B, D– 3 DETAIL "A" e 0.13 R. MIN. 0.40 MIN. 0 MIN.˚ 0 – 7˚ C C 0.13 / 0.30 R. L 1.60 REF. GAGE PLANE 0.10 S– 0.25 DETAIL "B" 12 – 16 1.41 REF. SEE DETAIL "B" 12 – 16˚ A H C 0.076 0.13 / 0.23 0.13 / 0.1712 BASE METAL WITH LEAD FINISHb ccc M SSA – B DC SECTION C-C Notes: 1. All dimensions and tolerances conform to ANSI Y14.5-1982. 2. Datum plane -H- located at mold parting line and coincident with lead, where lead exits plastic body at bottom of parting line. 3. Datums A-B and -D- to be determined where centerline between leads exits plastic body at datum plane -H-. 4. To be determined at seating plane -C-. 5. Dimensions D1 and E1 do not include mold protrusion. Allowable mold protrusion is 0.254 mm per side. Dimensions D1 and E1 do include mold mismatch and are determined at datum plan -H-. 6. “N” is the total # of terminals. 7. Package top dimensions are smaller than bottom dimensions by 0.20 mm, and top of package will not overhang bottom of package. 8. Dimension b does not include dambar protrusion. Allowable dambar protrusion shall be 0.08 mm total in excess of the b dimension at maximum material condition. Dambar cannot be located on the lower radius or the foot. 9. All dimensions are in millimeters. 10. Maximum allowable die thickness to be assembled in this package family is 0.635 millimeters. 11. This drawing conforms to JEDEC registered outline MS-108. 12. These dimensions apply to the flat section of the lead between 0.10 mm and 0.25 mm from the lead tip. lobmySn iMm oNx aMe toNs tnemmoC A5 1.25 3.2B CPevobathgieH 1A0 1.05 1.05 2.0e cnaraelCBCP 2A5 9.10 0.20 1.2s senkcihTydoB DC SB02.314 1DC SB00.015 h tgneLydoB 2DF ER08.7 DZF ER01.1 EC SB02.314 1EC SB00.015 h tdiWydoB 2EF ER08.7 EZF ER01.1 L3 7.08 8.03 0.1 N2 56 t nuoCniP e5 6.0h ctiPdaeL b2 2.08 3.08 1b2 2.00 3.03 3.0 aaa2 1.0 JEDEC Variation (all dimensions in millimeters)

11 2000 Semtech Corp. www.semtech.com EDGE HIGH-PERFORMANCE PRODUCTS Edge710 Recommended Operating Conditions retemaraPl obmySn iMx aMs tinU ylppuSrewoPevitisoPC CV0 .95 .51V ylppuSrewoPevitageNE EV0 .8-2 .4-V ylppuSgolanAlatoTE EV-CCV2 .315 .02V ylppuStuptuOrotarapmoCL CEP0 0 .5V stupnIgolanA leveLhgiHrevirDH VD5 .3+EEV9 .2-CCVV leveLwoLrevirDL VD9 .2+EEV5 .3-CCVV sleveLegatloVrepuSL VD,HVD5 .3+EEV0 .2-CCVV stnemtsujdAetaRwelSJ DAF,JDAR4 .3 .1A m saiBpihCS AIB6 .5 2.1A m stnerruCkniS,ecruoSN I_KSI,NI_CSI0 5 6.1A m sdlohserhTrotarapmoCB VC,AVC5 .3+EEV5 .3-CCVV erutarepmeTgnitarepOtneibmAA T0 7+ oC erutarepmeTnoitcnuJJ T5 25 21+ oC

12 2000 Semtech Corp. www.semtech.com EDGE HIGH-PERFORMANCE PRODUCTS Edge710 Absolute Maximum Ratings retemaraPl obmySn iMx aMs tinU )DNGotevitaler(CCVC CV0 5 .61V )DNGotevitaler(EEVE EV0 1-0 V ylppuSrewoPlatoTE EV-CCV0 .12V segatloVtupnIlatigiD) *(NE_DL,)*(NE_RVD,)*(IHDE EV0 .7+V segatloVtupnIgolanAN I_MCV,LVD,HVD,BVC,AVCE EVC CVV stnerruCtupnIgolanAN I_KSI,NI_CSI0 0 .3A m stnerruCtuptuOlatigiD* BQ/BQ,*AQ/AQ0 0 5A m tnerruCtuptuOrevirDt uoI0 4-0 4+A m gniwSrevirDL VD-HVD0 3 1V egatloVtupnIrotarapmoCP NIV-)B(AVC3 1-3 1+V erutarepmeTgnitarepOtneibmAA T0 5-5 21+ oC erutarepmeTegarotSS T5 6-0 51+ oC erutarepmeTnoitcnuJJ T0 51+ oC erutarepmeTgniredloS )nipehtmorf"52.,sdnoces5( LOST0 62+ oC Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only, and functional operation of the device at these, or any other conditions beyond those listed, is not implied. Exposure to absolute maximum conditions for extended periods may affect device reliability.

13 2000 Semtech Corp. www.semtech.com EDGE HIGH-PERFORMANCE PRODUCTS Edge710 DC Characteristics retemaraPl obmySn iMp yTx aMs tinU tiucriCDAOL egatloVgnitatummoC egnaRelbammargorP egatloVtesffO nItnerruCA_NI_MCV egnaRegatloVffiD NI_MCV NI_MCV-A_TUO_MCV niI A_TUO_MCV-DAOL 5.3+EEV 001- 001- 01- 5.3-CCV 001+ 001+ 01+ V Vm Aµ V tuptuOdaoL egnaRegatloVtuptuO egnaRtnerruCtuptuO DAOL-V DAOL-I 5.3+EEV 53- 5.3-CCV 53+ V Am elbanEdaoL egnaRegatloVtupnI gniwStupnIlaitnereffiD tnerruCtupnI *NE_DL,NE_DL *NE_DL-NE_DL niI 0.2- 52.0± 001- 0.5+ 0.4± 001+ V V Aµ tnerruCecruoS tnerruCtupnI egatloVNI_CSI niaGtnerruC NI_CSI NI_CSI_V NI_CSI/ECRUOS_I 001- 2.81 0.2 001+ 8.12 Am Vm tnerruCkniS tnerruCtupnI egatloVNI_KSI niaGtnerruC NI_KSI NI_KSI_V NI_KSI/KNIS_I 001- 2.81 0.2 001+ 8.12 Am Vm ytiraeniLdaoL Am5<tuptuO=<Am0 Am53<tuptuO=<Am5 demmargorP-lautcA demmargorP-lautcA %1-Aµ1- 05- %1+Aµ1+ 05+ Aµ Aµ tnerruCegakaeLZiHs aibI0 01-0 0 01+A n ecnailpmoCZiH5 .+EEVC CVV ecnatsiseRegdirBkniS/ecruoS )Aµ005=I@derusaem( 5.0 .10 .2 KΩ rorrEkniS/ecruoS )1+%1(- )1+%1(- 05- 05- 05- 05- 05- 05- 05- 1+%1 1+%1 05+ 05+ 05+ 05+ 05+ 05+ 05+ Aµ Aµ Aµ Aµ Aµ Aµ Aµ Aµ Aµ stnioPlaCt nioPtseT Aµ03/Aµ02 Aµ031/Aµ03 Aµ005/Aµ031 Aµ057/Aµ005 Am1/Aµ057 Am2.1/Am1 Am4.1/Am2.1 Am6.1/Am4.1 Am8.1/Am6.1 Aµ52 Aµ08 Aµ513 Aµ526 Aµ578 Am1.1 Am3.1 Am5.1 Am7.1 DC test conditions (unless otherwise specified): "Recommended Operating Conditions". RADJ = FADJ = 1.1 mA. BIAS = .6 mA.

14 2000 Semtech Corp. www.semtech.com EDGE HIGH-PERFORMANCE PRODUCTS Edge710 DC Characteristics (continued) retemaraPl obmySn iMp yTx aMs tinU tiucriCROTARAPMOC )0=DPI(egakaeLPNI_V V8+@ V5+@ V2-@ V4-@ SAIB_I SAIB_I SAIB_I SAIB_I <1±2 + Aµ Aµ Aµ Aµ )1=DPI(egakaeLPNI_V V5.3+EEV@ V5.3-CCV@ SAIB_I SAIB_I 052- 052- <001± <001± 052+ 052+ An An )1etoN(egatloVtesffO 0=C_DPI 1=C_DPI soV soV 01- 01- 01+ 01+ Vm Vm egatloVdlohserhTB VC,AVC9 .2+EEV9 .2-CCVV tnerruCtupnIdlohserhT) B(AVCSAIB_I0 5-0 5+A µ egnaRegatloVtupnIP NI_V5 .3+EEV5 .3-CCVV egnaRlaitnereiffiDtupnI) B(AVC-PNI_V2 1-8 +V gniwStuptuOlaitnereffiD| *BQ-BQ|,|*AQ-AQ|0 04V m )2etoN(tuptuOedoMnommoC 1lacigoL 0lacigoL *BQ,BQ,*AQ,AQ *BQ,BQ,*AQ,AQ 3.1-LCEP 8.1-LCEP 31.1-LCEP 46.1-LCEP 9.0-LCEP 4.1-LCEP V V SEILPPUSREWOP noitpmusnoCylppuSrewoP )3etoN( ylppuSevitisoP ylppuSevitageN CCI EEI 021 002- 081 061- Am Am DC test conditions (unless otherwise specified): "Recommended Operating Conditions". RADJ = FADJ = 1.1 mA. BIAS = .6 mA. Note 1: This parameter is guaranteed by characterization. It is tested in production against ± 100 mV limits. Note 2: Tested at PECL = 0V, PECL = +4V. Note 3: No Load Conditions.

15 2000 Semtech Corp. www.semtech.com EDGE HIGH-PERFORMANCE PRODUCTS Edge710 DC Characteristics (continued) retemaraPl obmySn iMp yTx aMs tinU tiucriCREVIRD stupnIgolanA leveLhgiH leveLwoL sleveLegatloVrepuS gniwSrevirD tnerruCtupnI stnemtsujdAetaRwelS tnerruCsaiBpihC HVD LVD LVD,HVD LVD-HVD ni_I JDAF,JDAR SAIB 5.3+EEV 9.2+EEV 5.3+EEV 05– 4.0 6.0 9.2-CCV 5.3-CCV 0.2-CCV 0.9 05+ 3.1 52.1 V V V V Aµ Am Am tuptuOrevirD tnerruCtuptuOCD )Am52±@(ecnadepmItuptuO )0=D_DPI(egakaeLZiH )1etoN()1=D_DPI(egakaeLZiH xamI tuoR saibI saibI 53- 5.0 052– 53+ 0.3 052+ Am Ω An An ycaruccA"hgiH"CD egatloVtesffO )2etoN(niaG )V7+otV2-(ytiraeniL )V8+@,V3-@(ytiraeniL TUOD-HVD ∆ /HVD ∆ TUOD TUOD-HVD TUOD-HVD 001– 589. 01- 51- 001+ 0.1 01+ 51+ Vm V/V Vm Vm ycaruccA"woL"CD egatloVtesffO )3etoN(niaG )V6+otV3-(ytiraeniL )V7+@,V4-@(ytiraeniL TUOD-LVD ∆ /LVD ∆ TUOD TUOD-LVD TUOD-LVD 001– 589. 01– 51– 001+ 0.1 01+ 51+ Vm V/V Vm Vm stupnIlatigiD egnaRegatloVtupnI gniwStupnIlaitnereffiD tnerruCtupnI )*(NE_RVD,)*(IHD *tupnI-tupnI niI 0.2– 52.0± 053– 0.5+ 0.4± 053+ V V Aµ Note 1: This parameter is guaranteed by characterization. It is tested in production against ± 200 nA limits. Note 2: Gain is computed from 2 points: DVH = –1V, +4V. Note 3: Gain is computed from 2 points: DVL = –1V, +4V.

16 2000 Semtech Corp. www.semtech.com EDGE HIGH-PERFORMANCE PRODUCTS Edge710 AC Characteristics retemaraPl obmySn iMp yTx aMs tinU tiucriCDAOL yaleDnoitagaporP tuoIottibihnI tibihnIottuoI no_dpT ffo_dpT 8.< sn sn ecnaticapaCtuptuO evitcAdaoL ffOdaoL tuoC tuoC 5.3 0.2 Fp Fp tiucriCROTARAPMOC yaleDnoitagaporPd pT5 .1s n gnikcarTetaRwelStupnI 0=C_DPI 1=C_DPI 0.6 sn/V sn/Vm ecnaticapaCtupnIn iC0 .2F p semiTllaFdnaesiRtuptuOlatigiD )%08-%02( rT,rT0 52s p htdiWesluPmuminiM 0.1s n tiucriCREVIRD yaleDnoitagaporP tuptuOotataD ZiHotelbanE evitcAtuptuOotelbanE dpT dpT dpT 5.1 5.1 5.1 sn sn sn semiTllaF/esiR )%08-%02(Vm008 )%09-%01(V3 )%09-%01(V5 fT/rT fT/rT fT/rT 005 008 0.1 sp sp sn xamF Vm008 xamF xamF xamF 006 004 002 zHM zHM zHM htdiWesluPmuminiM Vm008 008 2.1 4.2 sp sn sn ecnaticapaCtuptuOt uoC0 .2F p DC test conditions (unless otherwise specified): "Recommended Operating Conditions". RADJ = FADJ = 1.1 mA. BIAS = .6 mA.

17 2000 Semtech Corp. www.semtech.com EDGE HIGH-PERFORMANCE PRODUCTS Edge710

Ordering Information

Edge High-Performance Division 10021 Willow Creek Rd., San Diego, CA 92131 Phone: (858)695-1808 FAX (858)695-2633 rebmuNledoMe gakcaP FHA017E )ydoBmm01xmm01(PFQMdaeL25 redaerpStaeHlanretnIhtiw 017Dm roFeiD FHA017MVEd raoBnoitaulavE017egdE