HMC1114 AD | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 16
Technical content
10 W, GaN Power Amplifier,
2.7 GHz to 3.8 GHz Data Sheet HMC1114 Rev. 0 Document Feedback Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. Tel: 781.329.4700 ©2016 Analog Devices, Inc. All rights reserved. Technical Support www.analog.com
FEATURES
High saturated output power (PSAT): 41.5 dBm typical High small signal gain: 35 dB typical High power gain for saturated output power: 25.5 dB typical Bandwidth: 2.7 GHz to 3.8 GHz High power added efficiency (PAE): 54% typical High output IP3: 44 dBm typical Supply voltage: V DD = 28 V at 150 mA 32-lead, 5 mm × 5 mm LFCSP_CAV package
APPLICATIONS
Extended battery operation for public mobile radios Power amplifier stage for wireless infrastructure Test and measurement equipment Commercial and military radars General-purpose transmitter amplification FUNCTIONAL BLOCK DIAGRAM GND GND GND RFIN RFIN GND 7GND 8GND GND
18 GND
19 GND
20 RFOUT
21 RFOUT
22 GND
23 GND
24 GND
25 GND
26 VDD2
27 VDD2
28 GND
29 GND
30 VDD1
31 GND
32 GND
Figure 1. GENERAL DESCRIPTION The HMC1114 is a gallium nitride (GaN), broadband power amplifier, delivering 10 W with more than 50% power added efficiency (PAE) across a bandwidth of 2.7 GHz to 3.8 GHz. The HMC1114 provides ±0.5 dB gain flatness. The HMC1114 is ideal for pulsed or continuous wave (CW) applications such as wireless infrastructure, radar, public mobile radio, and general-purpose amplification. The HMC1114 is housed in a compact LFCSP_CAV package.
HMC1114* Product Page Quick Links Last Content Update: 11/01/2016 Comparable Parts View a parametric search of comparable parts Evaluation Kits
- HMC1114 Evaluation Board Documentation Data Sheet
- HMC1114: 10 Watt, GaN Power Amplifier, 2.7 GHz to 3.8 GHz Data Sheet Design Resources
- HMC1114 Material Declaration
- PCN-PDN Information
- Quality And Reliability
- Symbols and Footprints Discussions View all HMC1114 EngineerZone Discussions Sample and Buy Visit the product page to see pricing options Technical Support Submit a technical question or find your regional support number * This page was dynamically generated by Analog Devices, Inc. and inserted into this data sheet. Note: Dynamic changes to the content on this page does not constitute a change to the revision number of the product data sheet. This content may be frequently modified.
Rev. 0 | Page 2 of 15 TABLE OF CONTENTS
REVISION HISTORY
9/2016—Revision 0: Initial Version
Rev. 0 | Page 3 of 15 SPECIFICATIONS ELECTRICAL SPECIFICATIONS TA = 25°C, VDD = 28 V, IDQ = 150 mA, frequency range = 2.7 GHz to 3.2 GHz, unless otherwise noted. Table 1. Parameter Symbol Min Typ Max Unit Test Conditions/Comments FREQUENCY RANGE 2.7 3.2 GHz GAIN Small Signal Gain 32 35 dB Gain Flatness ±0.5 dB Power Gain for 4 dB Compression 29 dB Power Gain for Saturated Output Power 25.5 dB Measurement taken at PIN = 16 dBm RETURN LOSS Input 14 dB Output 11 dB POWER Output Power for 4 dB Compression P4dB 39 dBm Saturated Output Power PSAT 41.5 dBm Measurement taken at PIN = 16 dBm Power Added Efficiency PAE 54 % OUTPUT THIRD-ORDER INTERCEPT IP3 44 Measurement taken at POUT/tone = 30 dBm TARGET QUIESCENT CURRENT IDQ 150 mA Adjust the gate control voltage (VGG1, VGG2) between −8 V and 0 V to achieve an IDQ = 150 mA typical TA = 25°C, VDD = 28 V , IDQ = 150 mA, frequency range = 3.2 GHz to 3.8 GHz, unless otherwise noted. Table 2. Parameter Symbol Min Typ Max Unit Test Conditions/Comments FREQUENCY RANGE 3.2 3.8 GHz GAIN Small Signal Gain 29 32 dB Gain Flatness ±1 dB Power Gain for 4 dB Compression 28 dB Power Gain for Saturated Output Power 25 dB Measurement taken at PIN = 16 dBm RETURN LOSS Input 25 dB Output 9 dB POWER Output Power for 4 dB Compression P4dB 40 dBm Saturated Output Power PSAT 40.5 dBm Measurement taken at PIN = 16 dBm Power Added Efficiency PAE 53 % OUTPUT THIRD-ORDER INTERCEPT IP3 44 Measurement taken at POUT/tone = 30 dBm TARGET QUIESCENT CURRENT IDQ 150 mA Adjust the gate control voltage (VGG1, VGG2) between −8 V and 0 V to achieve an IDQ = 150 mA typical TOTAL SUPPLY CURRENT BY VDD Table 3. Parameter Symbol Min Typ Max Unit Test Conditions/Comments SUPPLY CURRENT IDQ Adjust VGG1, VGG2 to achieve an IDQ = 150 mA typical VDD = 25 V 150 mA VDD = 28 V 150 mA VDD = 32 V 150 mA
Rev. 0 | Page 4 of 15 ABSOLUTE MAXIMUM RATINGS Table 4. Parameter Rating Drain Bias Voltage (VDD1, VDD2) 35 V dc Gate Bias Voltage (VGG1, VGG2) −8 V to 0 V dc RF Input Power (RFIN) 30 dBm Maximum Forward Gate Current 4 mA Continuous Power Dissipation, PDISS (TA = 85°C, Derate 227 mW/°C Above 120°C) 24 W Thermal Resistance, Junction to Back of Paddle 4.4°C/W Channel Temperature 225°C Maximum Peak Reflow Temperature (MSL3)1 260°C Storage Temperature Range −40°C to +125°C Operating Temperature Range −40°C to +85°C ESD Sensitivity (Human Body Model) Class 1A, passed 250 V 1 See the Ordering Guide section. Stresses at or above those listed under Absolute Maximum Ratings may cause permanent damage to the product. This is a stress rating only; functional operation of the product at these or any other conditions above those indicated in the operational section of this specification is not implied. Operation beyond the maximum operating conditions for extended periods may affect product reliability. ESD CAUTION
- EXPOSED PAD. EXPOSED PAD MUST
BE CONNECTED TO RF/DC GROUND. Figure 2. Pin Configuration Table 5. Pin Function Descriptions Figure 3 for the GND interface schematic. Figure 5 for the VGG1 and VGG2 interface schematic. required. See Figure 7 for the VDD1 and VDD2 interface schematic. EPAD Exposed Pad. The exposed pad must be connected to RF/dc ground. Figure 3. GND Interface Figure 4. RFIN Interface Figure 5. VGG1 and VGG2 Interface Figure 6. RFOUT Interface Figure 7. VDD1 and VDD2 Interface
diagram for the amplifier is shown in Figure 40. Figure 40. Basic Block Diagram voltage that no impedance matching compensation is required. exceed the absolute maximum ratings.
available from Analog Devices, Inc., upon request. Figure 42. Evaluation Printed Circuit Board (PCB) Table 6. Bill of Materials for Evaluation PCB EVL1HMC1114LP5D (600-01209-00)
0.50 MIN
3.50 REF
4.81 REF
Figure 43. 32-Lead Lead Frame Chip Scale Package, Premolded Cavity [LFCSP_CAV] 1 The HMC1114LP5DE and the HMC1114LP5DETR are LFCSP premolded copper alloy lead frame and RoHS Compliant Parts. 2 When ordering the evaluation board only, reference the EVL1HMC1114LP5D model number. 3 See the Absolute Maximum Ratings section for additional information. 4 The lead finish of the HMC1114LP5DE and HMC1114LP5DETR are nickel palladium gold (NiPdAu). 5 The HMC1114LP5DE and HMC1114LP5DETR four-digit lot number is represented by XXXX. registered trademarks are the prop erty of their respective owners.