EVAL-1ED3121MX12H

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EiceDRIVER™ 1ED31xxMU12H Compact Datasheet Single-channel 5.7 kV (rms) isolated gate driver IC with active Miller clamp or separate output Feature list

• Single channel isolated gate driver
• For use with 600 V/650 V/1200 V/1700 V/2300 V IGBTs, Si and SiC MOSFETs
• Up to 14.0 A typical peak output current
• 40 V absolute maximum output supply voltage
• High common-mode transient immunity CMTI > 200 kV/µs
• Separate source and sink outputs or active Miller clamp with active shutdown and short circuit clamping
• Galvanically isolated coreless transformer gate driver
• 3.3 V and 5 V input supply voltage
• Suitable for operation at high ambient temperature and in fast switching applications
• UL 1577 certification VISO = 5.7 kV (rms) for 1 min (File E311313) Potential applications
• AC and brushless DC motor drives
• High voltage DC-DC converter and DC-AC inverter
• Induction heating resonant application
• UPS-systems
• Commercial air-conditioning (CAC)
• Server and telecom switched mode power supplies (SMPS)
• Solar inverters, e.g. for 1500 V (DC) systems PG-DSO-8 Product validation Qualified for industrial applications according to the relevant tests of JEDEC47/20/22. Device information Product type Typical output current and configuration UVLO (VUVLOL2,min) Certification (File E311313) Package 1ED3120MU12H 5.5 A separate source and sink 8.0 V UL PG-DSO-8 1ED3121MU12H 5.5 A separate source and sink 10.5 V UL PG-DSO-8 1ED3122MU12H 10.0 A and 3.0 A clamp 8.0 V UL PG-DSO-8 1ED3123MU12H 14.0 A separate source and sink 8.0 V UL PG-DSO-8 1ED3124MU12H 14.0 A separate source and sink 10.5 V UL PG-DSO-8 1ED3131MU12H 5.5 A separate source and sink, 180 ns minimum input pulse suppression time

10.5 V UL PG-DSO-8

1ED31xxMU12H (1ED-X3 Compact) Datasheet Please read the Important Notice and Warnings at the end of this document v2.1 www.infineon.com/gdisolated 2021-03-01

Description

The 1ED31xxMU12H (1ED-X3 Compact) gate driver ICs are galvanically isolated single channel gate driver ICs for IGBT , MOSFET and SiC MOSFET in PG-DSO-8 package. They provide a typical output current of up to 14.0 A on separate source and sink pins or a typical output current of 10.0 A with an additional 3.0 A active Miller clamp. The input logic pins operate on a wide input voltage range from 3 V to 15 V using CMOS threshold levels to support 3.3 V microcontrollers. Data transfer across the isolation barrier is realized by the coreless transformer technology. All variants have logic input and driver output undervoltage lockout (UVLO), and active shutdown. The gate drivers are certified according to UL 1577 OUT+ OUT+ Control EiceDRIVER TM IN+ IN+ IN- IN- GND1 VCC1 VCC2,H VCC2,L VEE2,L VEE2,HGND1 VCC1 OUT- OUT- Single channel with separate output EiceDRIVER TM Single channel with separate output Figure 1 Typical application using separate output variant EiceDRIVER™ 1ED31xxMU12H Compact Datasheet Datasheet 2 v2.1 2021-03-01

EiceDRIVER™ 1ED31xxMU12H Compact Datasheet Table of contents Datasheet 3 v2.1 2021-03-01

1 Block diagram reference

Figure 2 Block diagram separate source and sink output variants IN+ IN- GND1 VCC1 VCC2 CLAMP OUT VEE2 input filter TX UVLO active filter input filter GND1 VCC1 UVLO RX VCC2 VEE2 Figure 3 Block diagram output with CLAMP variants EiceDRIVER™ 1ED31xxMU12H Compact Datasheet Datasheet 4 v2.1 2021-03-01

2 Related products

Note: Please consider the gate driver IC power dissipation and insulation requirements for the selected power switch and operating condition. Product group Product name Description TRENCHSTOP™ IGBT Discrete IKQ75N120CS6 High Speed 1200 V, 75 A IGBT with anti-parallel diode in TO247-3 IKW15N120BH6 High Speed 1200 V, 15 A IGBT with anti-parallel diode in TO247 IHW40N120R5 Reverse conducting 1200 V, 40 A IH IGBT with integrated diode in TO247 CoolSiC™ SiC MOSFET Discrete IMBF170R650M1 1700 V, 650 mΩ SiC MOSFET in TO263-7 package IMBG120R045M1H 1200 V, 45 mΩ SiC MOSFET in TO263-7 package IMZ120R350M1H 1200 V, 350 mΩ SiC MOSFET in TO247-4 package IMZA65R027M1H 650 V, 27 mΩ SiC MOSFET in TO247-4 package IMW65R107M1H 650 V, 107 mΩ SiC MOSFET in TO247-3 package CoolSiC™ SiC MOSFET Module FS45MR12W1M1_B11 EasyPACK™ 1B 1200 V / 45 mΩ sixpack module FF6MR12W2M1_B11 EasyDUAL™ 2B 1200 V, 6 mΩ half-bridge module F3L11MR12W2M1_B74 EasyPACK™ 2B 1200 V, 11 mΩ 3-Level module in Advanced NPC (ANPC) topology F4-23MR12W1M1_B11 EasyPACK™ 1B 1200 V, 23 mΩ fourpack module TRENCHSTOP™ IGBT Modules F4-200R17N3E4 EconoPACK™ 3 1700 V, 200 A fourpack IGBT module FS150R17N3E4 EconoPACK™ 3 1700 V, 150 A sixpack IGBT module FF650R17IE4 PrimePACK™ 3 1700 V, 650 A half-bridge dual IGBT module FF1000R17IE4 PrimePACK™ 3 1700 V, 1000 A half-bridge dual IGBT module FF1200R17IP5 PrimePACK™ 3+ 1700 V, 1200 A dual IGBT module FF1500R17IP5 PrimePACK™ 3+ 1700 V, 1500 A dual IGBT module FF1500R17IP5R PrimePACK™ 3 1700 V, 1500 A dual IGBT module FF1800R17IP5 PrimePACK™ 3+ 1700 V, 1800 A dual IGBT module FP10R12W1T7_B11 EasyPIM™ 1B 1200 V, 10 A three phase input rectifier PIM IGBT module FS100R12W2T7_B11 EasyPACK™ 2B 1200 V, 100 A sixpack IGBT module FP150R12KT4_B11 EconoPIM™ 3 1200V three-phase PIM IGBT module FS200R12KT4R_B11 EconoPACK™ 3 1200 V, 200 A sixpack IGBT module Table 1 Evaluation boards Part number Description EVAL-1ED3121MX12H Half-bridge evaluation board for 1ED3121MU12H EVAL-1ED3122MX12H Half-bridge evaluation board for 1ED3122MU12H EVAL-1ED3124MX12H Half-bridge evaluation board for 1ED3124MU12H EiceDRIVER™ 1ED31xxMU12H Compact Datasheet Datasheet 5 v2.1 2021-03-01

3 Pin configuration and description

Pin configuration PG-DSO-8 of 1ED3121MU12H, 1ED3124MU12H, 1ED3120MU12H, 1ED3123MU12H and 1ED3131MU12H Table 2 Pin configuration Pin No. Name Function

1 VCC1 Positive logic supply

2 IN+ Non-inverted driver input (active high)

3 IN- Inverted driver input (active low)

4 GND1 Logic ground

5 VEE2 Power ground

6 OUT - Driver sink output

7 OUT+ Driver source output

8 VCC2 Positive power supply output side

Figure 4 PG-DSO-8 (top view) Pin configuration PG-DSO-8 of 1ED3122MU12H Table 3 Pin configuration Pin No. Name Function

6 CLAMP Active Miller clamp output

7 OUT Driver source and sink output

EiceDRIVER™ 1ED31xxMU12H Compact Datasheet Datasheet 6 v2.1 2021-03-01

Figure 5 PG-DSO-8 (top view) Pin description

• VCC1: Logic input supply voltage of 3.3 V up to 15 V wide operating range
• GND1: Ground connection of input circuit.
• IN+: Non-inverted control signal for driver output. An internal filter provides robustness against noise at IN+. An internal weak pull-down resistor favors off-state.
• IN-: Inverted control signal for driver output. An internal filter provides robustness against noise at IN-. An internal weak pull-up resistor favors off-state.
• VCC2: Positive power supply pin of output driving circuit. A proper blocking capacitor has to be placed close to this supply pin.
• VEE2: Reference ground of the output driving circuit. In case of a bipolar supply (positive and negative voltage referred to IGBT emitter) this pin is connected to the negative supply voltage.
• OUT+: Driver source output pin to turn on external IGBT . During on-state the driving output is switched to VCC2. Switching of this output is controlled by IN+ and IN-. This output will also be turned off at an UVLO event.
• OUT -: Driver sink output pin to turn off external IGBT . During off-state the driving output is switched to VEE2. Switching of this output is controlled by IN+ and IN-. In case of UVLO an active shut down keeps the output voltage at a low level.
• OUT: Combined source and sink output pin to external IGBT . The output voltage will be switched between VCC2 and VEE2. Switching of this output is controlled by IN+ and IN-. In case of an UVLO event this output will be switched off and an active shut down keeps the output voltage at a low level.
• CLAMP: The clamp function ties its output to VEE2 during off-state. It activates as soon as the gate voltage has dropped below 2.0 V referred to VEE2 after a turn-off command. Connect this pin directly to the IGBT gate to avoid parasitic turn-on of the connected IGBT . EiceDRIVER™ 1ED31xxMU12H Compact Datasheet

Datasheet 7 v2.1 2021-03-01

4 Functional description

The 1ED31xxMU12H (1ED-X3 Compact) are general purpose IGBT gate drivers. Basic control and protection features support fast and easy design of highly reliable systems. The integrated galvanic isolation between control input logic and driving output stage grants additional safety. Its input voltage supply range supports the direct connection of various signal sources like DSPs and microcontrollers.

4.1 Supply

The driver can operate over a wide supply voltage range, either unipolar or bipolar. GND1 IN+ IN- VCC1 OUT+ VCC2 VEE2 OUT- +3.3 V SGND IN +15 V 10R 4µ7 100n 3R3 -8 V 4µ7 0 V Figure 6 Application example bipolar supply With bipolar supply the driver is typically operated with a positive voltage of 15 V at VCC2 and a negative voltage of -8 V at VEE2 relative to the emitter of the IGBT . Negative supply can help to prevent a dynamic turn on due to the additional charge which is generated from IGBT’s input capacitance. GND1 IN+ IN- VCC1 OUT VCC2 VEE2 CLAMP +3.3 V SGND IN +15 V 10R 4µ7 100n Figure 7 Application example unipolar supply For unipolar supply configuration the driver is typically supplied with a positive voltage of 15 V at VCC2. In this case, careful evaluation for turn off gate resistor selection is recommended to avoid dynamic turn on. Both supply options are usable with either output configuration separate source and sink as well as output with active Miller clamp. EiceDRIVER™ 1ED31xxMU12H Compact Datasheet Datasheet 8 v2.1 2021-03-01

4.2 Protection features

4.2.1 Undervoltage lockout (UVLO)

To ensure correct switching of IGBTs the device is equipped with an undervoltage lockout for input and output independently. Operation starts only after both VCC levels have increased beyond the respective VUVLOH levels. If the power supply voltage VVCC1 of the input chip drops below VUVLOL1 a turn-off signal is sent to the output chip before power-down. The IGBT is switched off and the signals at IN+ and IN- are ignored until VVCC1 reaches the power-up voltage VUVLOH1 again. If the power supply voltage VVCC2 of the output chip goes down below VUVLOL2 the IGBT is switched off and signals from the input chip are ignored until VVCC2 reaches the power-up voltage VUVLOH2 again. Note: V VCC2 is always referred to VEE2 and does not differ entiat e between unipolar or bipolar supply.

4.2.2 Active shut-down

The active shut-down feature ensures a safe IGBT off-state in case the output chip is not connected to the power supply or an undervoltage lockout is in effect. The IGBT gate is clamped at OUT - or CLAMP to VEE2.

4.2.3 Short circuit clamping

During short circuit the IGBTs gate voltage tends to rise because of the feedback via the Miller capacitance. An internal protection circuit at OUT+ or CLAMP limits this voltage to a value slightly higher than the supply voltage. A maximum current of 500 mA may be fed back to the supply through this path for 10 μs. If higher currents are expected or tighter clamping is desired external Schottky diodes may be added.

4.2.4 Active Miller clamp

In a half bridge configuration the switched off IGBT tends to dynamically turn on during turn on phase of the opposite IGBT. A Miller clamp allows sinking the Miller current across a low impedance path in this high dV/dt situation. Therefore in many applications, the use of a negative supply voltage can be avoided. During turn-off, the gate voltage is monitored and the clamp output is activated when the gate voltage drops below typical 2 V (referred to VEE2). The clamp is designed for a Miller current in the same range as the nominal output current. EiceDRIVER™ 1ED31xxMU12H Compact Datasheet Datasheet 9 v2.1 2021-03-01

4.3 Non-inverting and inverting inputs

Figure 9 Logic input to output switching behavior There are two possible input modes to control the IGBT . At non-inverting mode IN+ controls the driver output while IN- is set to low. At inverting mode IN- controls the driver output while IN+ is set to high. A minimum input pulse width is defined to filter occasional glitches.

4.4 Driver outputs

The output driver section uses MOSFETs to provide a rail-to-rail output. This feature permits that tight control of gate voltage during on-state and short circuit can be maintained as long as the driver’s supply is stable. Due to the low internal voltage drop, switching behavior of the IGBT is predominantly governed by the gate resistor. Furthermore, it reduces the power to be dissipated by the driver. EiceDRIVER™ 1ED31xxMU12H Compact Datasheet Datasheet 10 v2.1 2021-03-01

5 Electrical characteristics and parameters

5.1 Absolute maximum ratings

Absolute maximum ratings are defined as ratings, which when being exceeded may lead to destruction of the integrated circuit. Unless otherwise noted all parameters refer to GND1. Table 4 Absolute maximum ratings Parameter Symbol Values Unit Note or test conditionMin. Max. Input to output offset voltage VOFFSET – 2300 V VVEE2,max-VVEE2,min with VVEE2,max ≥ VGND1 ≥ VVEE2,min1) 2) Power supply output side VVCC2 -0.3 40 V 3) Gate driver output (OUT+, OUT -, OUT, CLAMP) VOUT VEE2 - 0.3 VCC2 + 0.3 V 3) Power supply input side VVCC1 -0.3 17 V VCC1 - GND1 Logic input voltages (IN+, IN-) VIN -0.3 6.5 V IN - GND1 Junction temperature TJ -40 150 °C – Storage temperature TStg -55 150 °C – Power dissipation (input side) PD,IN – 100 mW TA = 65°C4) Power dissipation (output side) PD,OUT – 700 mW TA = 65°C5) Thermal resistance junction to ambient RthJA,OUT – 88 K/W TA = 85°C 300 mil, 1s0p, PJ = 266 mWCharacterization parameter junction to package top input side ΨJtop – 6 K/W ESD robustness VESD,HBM – 4 kV Human body model6) ESD,CDM – TC 1000 – Charged device model7) 1) for functional operation only 2) See also Chapter 6 on page 17 3) With respect to VEE2 4) IC input-side power dissipation is derated linearly with 11.4 mW/°C above 141 °C 5) IC output-side power dissipation is derated linearly with 11.4 mW/°C above 88 °C 6) According to ANSI/ESDA/JEDEC-JS-001-2017 (discharging a 100 pF capacitor through a 1.5 kΩ series resistor). 7) According to ANSI/ESDA/JEDEC-JS-002-2014 (TC = test condition in volt) Figure 10 Reference layout for thermal data (Copper thickness 35 μm) This PCB layout represents the reference layout used for the thermal characterization of the 300 mil package. EiceDRIVER™ 1ED31xxMU12H Compact Datasheet Datasheet 11 v2.1 2021-03-01

5.2 Operating parameters

Within the operating range the IC operates as described in the functional description. Unless otherwise noted all parameters refer to GND1. Table 5 Electrical characteristics Parameter Symbol Values Unit Note or test conditionMin. Max. Power supply output side VVCC2 10 35 V 1) Power supply input side VVCC1 3.1 15 V – Logic input voltages (IN+, IN-) VIN -0.3 5.5 V – Switching frequency fSW – 1 MHz max PD applies Ambient temperature TA -40 125 °C – Common mode transient immunity (CMTI) CMTI -200 200 kV/µs VOFFSET ,test = 1500 V 1) With respect to VEE2 EiceDRIVER™ 1ED31xxMU12H Compact Datasheet Datasheet 12 v2.1 2021-03-01

5.3 Electrical characteristics

Note: The electrical characteristics include the spread of values in supply voltages, load and junction temperatures given below. Typical values represent the median values at TA = 25°C. Unless otherwise noted all voltages are given with respect to their respective GND (GND1 for pins 1 to 3 and VEE2 for pins 6 to 8).

5.3.1 Power supply

Parameter Symbol Values Unit Note or test conditionMin. Typ. Max. UVLO threshold input side (on) VUVLOH1 – – 3.1 V – UVLO threshold input side (off) VUVLOL1 2.5 – – V – UVLO hysteresis input side VHYS1 0.1 0.2 – V – UVLO threshold output side (on) VUVLOH2,1 – – 10.0 V 1ED3120MU12H, 1ED3122MU12H, 1ED3123MU12HUVLO threshold output side (off) VUVLOL2,1 8.0 – – V UVLO threshold output side (on) VUVLOH2,2 – – 12.5 V 1ED3121MU12H, 1ED3124MU12H, 1ED3131MU12HUVLO threshold output side (off) VUVLOL2,2 10.5 – – V UVLO hysteresis output side VHYS2 0.8 – – V – Quiescent current input side IQ1 – – 1.1 mA static, output low Quiescent current output side IQ2 – – 2 mA Start up time tSTART – 2.5 20 µs 1) UVLO detection filter time tUVLOflt 50 – – ns 1) 1) Parameter is not subject to production test - verified by design/characterization

5.3.2 Logic input

Parameter Symbol Values Unit Note or test conditionMin. Typ. Max. IN+, IN- low input threshold voltage VIN,L – – 1.1 V – IN+, IN- high input threshold voltage VIN,H 2.5 – – V – IN+, IN- low/high hysteresis VIN,HYS 0.5 0.8 – V – IN+, IN- input current IIN – – 100 µA VVCC1 = 5 V; VIN ≤ VVCC1 IN+ pull down resistor RIN,PD – 75 – kΩ – IN- pull up resistor RIN,PU – 75 – kΩ – EiceDRIVER™ 1ED31xxMU12H Compact Datasheet Datasheet 13 v2.1 2021-03-01

5.3.3 Gate driver

All gate driver output parameters valid for VCC2 = 15 V supply voltage unless specified otherwise. Table 8 Gate driver Parameter Symbol Values Unit Note or test conditionMin. Typ. Max. 1ED3120MU12H, 1ED3121MU12H, 1ED3131MU12H High level output peak current IOUT ,H 2.0 5.5 – A 1) VCC2-OUT+ = 15 V, Output on High level output on resistance RDSON,H 0.60 0.95 1.45 Ω IOUT ,H = 0.1 A Low level output peak current IOUT ,L 2.0 5.5 – A 1) OUT --VEE2 = 15 V, Output off Low level output on resistance RDSON,L 0.50 0.75 1.05 Ω IOUT ,L = 0.1 A 1ED3122MU12H High level output peak current IOUT ,H 4.0 10.0 – A 1) VCC2-OUT = 15 V, Output on High level output on resistance RDSON,H 0.30 0.55 0.85 Ω IOUT ,H = 0.1 A Low level output peak current IOUT ,L 4.0 9.0 – A 1) OUT-VEE2 = 15 V, Output off Low level output on resistance RDSON,L 0.30 0.45 0.65 Ω IOUT ,L = 0.1 A Low level clamp peak current ICLAMP ,L 2.0 3.0 – A 1) VCLAMP = 2.0 V Low level clamp on resistance RDSON,CLP 0.33 0.55 0.76 Ω ICLAMP ,L = 0.1 A CLAMP threshold voltage VCLAMP 1.6 2.0 2.4 V CLAMP-VEE2 CLAMP comparator to CLAMP activation delay time tCLPDLY – – 80 ns 1) VCLAMP ≤ 2.0 V 1ED3123MU12H, 1ED3124MU12H High level output peak current IOUT ,H 6.0 13.5 – A 1) VCC2-OUT+ = 15 V, Output on High level output on resistance RDSON,H 0.27 0.45 0.65 Ω IOUT ,H = 0.1 A Low level output peak current IOUT ,L 6.0 14.0 – A 1) OUT --VEE2 = 15 V, Output off Low level output on resistance RDSON,L 0.21 0.35 0.60 Ω IOUT ,L = 0.1 A all variants High level output voltage ΔVOUT ,H – – 0.3 V VCC2-VOUT ,H; IOUT = 20 mA Low level output voltage ΔVOUT ,L – – 0.1 V VCC2-VOUT ,H; IOUT = 20 mA Short circuit clamp voltage between OUT+/CLAMP and VCC2 VCLP – – 2.0 V Output on, IOUT = 500 mA, t < 10 µs 1) Parameter is not subject to production test - verified by design/characterization EiceDRIVER™ 1ED31xxMU12H Compact Datasheet Datasheet 14 v2.1 2021-03-01

5.3.4 Dynamic characteristics

Dynamic characteristics are measured with VVCC1 = 5 V and VVCC2 = 15 V. IN+ OUT tPDON 10% tPDOFF 20% 80% tRISE tFALL 90% V IN,H V IN,L Figure 11 Propagation delay, rise and fall time Table 9 Filter and propagation delay characteristics (1ED3131MU12H only) Parameter Symbol Values Unit Note or test conditionMin. Typ. Max. Input to output propagation delay ON tPDON – 270 280 ns CLOAD = 100 pF, IN turn-on threshold to 10% output on Input to output propagation delay OFF tPDOFF – 270 280 ns CLOAD = 100 pF, IN turn-off threshold to 90% output off Input to output propagation delay distortion tPDISTO -15 0 15 ns tPDOFF - tPDON Input pulse suppression time (filter time) tINFL T 180 – – ns shorter pulses will not propagate to the output Minimum input pulse length tMININ – – 220 ns – Input to output propagation delay variation due to temperature tPD, T – – 14 ns 1) Input to output propagation delay distortion variation due to temperature tPDISTO, T – – 5 ns 1) Input to output, part to part propagation delay ON variation |tPDon,P2P| – – 15 ns 1) 2) CLOAD = 100 pF 1) Parameter is not subject to production test - verified by design/characterization Table 10 Filter and propagation delay characteristics (all other variants) Parameter Symbol Values Unit Note or test conditionMin. Typ. Max. Input to output propagation delay ON tPDON 80 90 100 ns CLOAD = 100 pF, IN turn-on threshold to 10% output on Input to output propagation delay OFF tPDOFF 80 90 100 ns CLOAD = 100 pF, IN turn-off threshold to 90% output off EiceDRIVER™ 1ED31xxMU12H Compact Datasheet Datasheet 15 v2.1 2021-03-01

Table 10 Filter and propagation delay characteristics (all other variants) (continued) Parameter Symbol Values Unit Note or test conditionMin. Typ. Max. Input to output propagation delay distortion tPDISTO -5 0 5 ns tPDOFF - tPDON Input pulse suppression time (filter time) tINFL T 30 – – ns shorter pulses will not propagate to the output Minimum input pulse length tMININ – – 40 ns – Input to output propagation delay variation due to temperature tPD, T – – 14 ns 1) Input to output propagation delay distortion variation due to temperature tPDISTO, T – – 3 ns 1) Input to output, part to part propagation delay ON variation |tPDon,P2P| – – 7 ns 1) 2) CLOAD = 100 pF 1) Parameter is not subject to production test - verified by design/characterization 2) Absolute value at same ambient and operating conditions. Table 11 Dynamic output characteristics Parameter Symbol Values Unit Note or test conditionMin. Typ. Max. Rise time tRISE – – 15 ns CLOAD = 100 pF Fall time tFALL – – 15 ns CLOAD = 100 pF Rise time tRISE – – 30 ns CLOAD = 1 nF Fall time tFALL – – 30 ns CLOAD = 1 nF

5.3.5 Active shut down

Parameter Symbol Values Unit Note or test conditionMin. Typ. Max. Active shut down voltage, cold VACTSD,C – – 1.9 V IOUT = 10 mA; VCC2 unsupplied; TA < 20°C Active shut down voltage, hot VACTSD,H – – 1.7 V 1) IOUT- = 10 mA; VCC2 unsupplied; TA ≥ 20°C 1) Parameter is not subject to production test - verified by design/characterization EiceDRIVER™ 1ED31xxMU12H Compact Datasheet Datasheet 16 v2.1 2021-03-01

6 Insulation characteristics

Table 13 Safety limiting values This coupler is suitable for rated insulation only within the given safety limiting values. Compliance with the safety limiting values shall be ensured by means of suitable protective circuits. Description Symbol Characteristic Unit Maximum ambient safety temperature TS 150 °C Maximum input-side power dissipation at TA = 25°C1) PSI 100 mW Maximum output-side power dissipation at TA = 25°C2) PSO 1314 mW 1) IC input-side power dissipation is derated linearly with 11.4 mW/°C above 141 °C 2) IC output-side power dissipation is derated linearly with 8.8 mW/°C above 25°C Table 14 Package specific insulation characteristics Description Symbol Characteristic Unit Minimum external clearance CLR >8 mm Minimum external creepage CPG >8 mm Minimum comparative tracking index CTI 400 – Insulation capacitance CIO 0.9 pF

6.1 Recognized under UL 1577 (File E311313)

Table 15 Recognized under UL 1577 Description Symbol Characteristic Unit Insulation withstand voltage/1 min VISO 5700 V (rms) Insulation test voltage/1 s VISO, TEST 6840 V (rms) EiceDRIVER™ 1ED31xxMU12H Compact Datasheet Datasheet 17 v2.1 2021-03-01

7 Package dimensions

Figure 12 PG-DSO-8 (Plastic (green) dual small outline package, 300 mil) EiceDRIVER™ 1ED31xxMU12H Compact Datasheet Datasheet 18 v2.1 2021-03-01

Revision history

v2.1 • RDSON parameter values update

• Safety limiting values derived from 1ED31xxMC12H datasheet
• Update to ESD,CDM footnote and package outline drawing v2.0 Final datasheet with parameter updates v1.0 Preliminary datasheet with parameter updates EiceDRIVER™ 1ED31xxMU12H Compact Datasheet

Datasheet 19 v2.1 2021-03-01

All referenced product or service names and trademarks are the property of their respective owners. Edition 2021-03-01 Published by Infineon Technologies AG

81726 Munich, Germany

© 2021 Infineon Technologies AG All Rights Reserved. Do you have a question about any aspect of this document? Email: erratum@infineon.com Document reference IFX-kwb1571987036400 IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. WARNINGS Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.