ICP1543 MICROCHIP | Alldatasheet

Document overview

  • Manufacturer or author: D
  • PDF pages: 20

Technical content

Features

  • Frequency Range: 12-18GHz
  • Pout: 43 dBm @ 24dBm Pin
  • PAE: >30 %
  • Small Signal Gain: 22dB
  • Bias: VD=24V IDQ=150mA
  • Technology: GaN on SiC
  • Lead-free and RoHS compliant
  • Die Size = 3.75 mm x 3.45 mm

Applications

  • Test and Measurement
  • Aerospace & Defense Min Typ Max Units Frequency 12 18 GHz Output Power @ Psat Pin=25dBm 43 dBm PAE @ Psat Pin=25dBm 30 % Small Signal Gain 22 dB Input Return Loss 10 dB Output Return Loss 7 dB Functional Block Diagram Recommended Operating Conditions Drain Voltage (VD) 20V-24V Drain Quiescent Current (IDQ) 150-300mA Gate Voltage Range (VG) -2 to –1.5V Operating Temperature (TA) -40 to +85C Electrical Specifications | Test conditions unless otherwise stated | VD=24V, IDQ=150mA TA=25 oC, CW

Description

ICONICRF’s ICP1543 is a three stage MMIC power amplifier in bare die form, fabricated using GaN on SiC technology. ICP1543 operates from 12 -18GHz with 43dBm output power, >30% PAE and 22dB small signal gain. ICP1543 is well suited to a variety of Test and Measurement and Aerospace & Defense applications . VG VG VG VDVDVD RF IN RF OUT

12-18GHz 20W GaN PA MMIC ICP1543 Datasheet Rev E © 2023 Microchip Technology Inc. and its subsidiaries Page 2 Typical Small Signal Data | Test conditions unless otherwise stated VD=20V, IDQ=150mA — Temp = 25°C — Temp = -40°C — Temp = 85⁰C — Temp = 25°C — Temp = -40°C — Temp = 85⁰C — Temp = 25°C — Temp = -40°C — Temp = 85⁰C — Temp = 25°C — Temp = -40°C — Temp = 85⁰C Thermal and Reliability Thermal Resistance 1.1ºC/W Absolute Maximum Ratings Drain Voltage (VDG) 30V Gate Voltage Range (VG) -5V to 0V Drain Current (ID) TA=25ºC 8A Gate Current (IG) 6.0mA Power Dissipation (CW) TA=25ºC Power Dissipation (CW) TA=85ºC 180W 125W CW Input Power +28dBm Channel Temperature 275°C Eutectic Die Attach Temperature (30s) 320°C Storage Temperature -65°C to +150°C Exceeding any one or combination of the absolute maximum lim- its may cause permanent damage to this device. ICONICRF does not recommend sustained operation near these survivability limits.

Ordering Information

ICP1543-1-110I Bare die in Gel-Pack trays EV83T37A ICP1543-1-501U EVB SMA connectors Notes  Assumes silver sintered epoxy attach (15um thick) mounted on CuMo carrier.  Base temperature is assumed at the top of the CuMo carrier  Thermal resistance calculated using IR measurement of the channel temperature.

12-18GHz 20W GaN PA MMIC ICP1543 Datasheet Rev E © 2023 Microchip Technology Inc. and its subsidiaries Page 3 Typical Small Signal Data | Test conditions unless otherwise stated VD=24V, IDQ=150mA — Temp = 25°C — Temp = -40°C — Temp = 85⁰C — Temp = 25°C — Temp = -40°C — Temp = 85⁰C — Temp = 25°C — Temp = -40°C — Temp = 85⁰C — Temp = 25°C — Temp = -40°C — Temp = 85⁰C

12-18GHz 20W GaN PA MMIC ICP1543 Datasheet Rev E © 2023 Microchip Technology Inc. and its subsidiaries Page 4 Typical Large Signal Data | Test conditions unless otherwise stated VD=20V, IDQ=150mA ,TA=25 oC, Pulse width=100us, Pulse period =1ms 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 Pout (dBm) Pin (dBm) Pout vs. Pin (Vds=20V, Idq=150mA, Temp=25°C, Pulse =100us/1ms) Freq (GHz)=18 Freq (GHz)=17 Freq (GHz)=16 Freq (GHz)=15 Freq (GHz)=14 Freq (GHz)=13 Freq (GHz)=12 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 Gain (dB) Pin (dBm) Gain vs. Pin (Vds=20V, Idq=150mA, Temp=25°C, Pulse =100us/1ms) Freq (GHz)=18 Freq (GHz)=17 Freq (GHz)=16 Freq (GHz)=15 Freq (GHz)=14 Freq (GHz)=13 Freq (GHz)=12 500 1000 1500 2000 2500 3000 3500 4000 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 Id (mA) Pin (dBm) Drain Current vs. Pin (Vds=20V, Idq=150mA, Temp=25°C, Pulse =100us/1ms) Freq (GHz)=18 Freq (GHz)=17 Freq (GHz)=16 Freq (GHz)=15 Freq (GHz)=14 Freq (GHz)=13 Freq (GHz)=12 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 PAE (%) Pin (dBm) PAE vs. Pin (Vds=20V, Idq=150mA, Temp=25°C, Pulse =100us/1ms) Freq (GHz)=18 Freq (GHz)=17 Freq (GHz)=16 Freq (GHz)=15 Freq (GHz)=14 Freq (GHz)=13 Freq (GHz)=12 11 12 13 14 15 16 17 18 19 PAE (%) Freq (GHz) PAE vs. Freq (Vds=20V, Idq=150mA, Temp=25°C, Pulse =100us/1ms) Pin (dBm)=27 Pin (dBm)=26 Pin (dBm)=25 Pin (dBm)=24 Pin (dBm)=23 Pin (dBm)=17 Pin (dBm)=11 11 12 13 14 15 16 17 18 19 Pout (dBm) Freq (GHz) Pout vs. Freq (Vds=20V, Idq=150mA, Temp=25°C, Pulse =100us/1ms) Pin (dBm)=27 Pin (dBm)=26 Pin (dBm)=25 Pin (dBm)=24 Pin (dBm)=23 Pin (dBm)=17 Pin (dBm)=11

12-18GHz 20W GaN PA MMIC ICP1543 Datasheet Rev E © 2023 Microchip Technology Inc. and its subsidiaries Page 5 Typical Large Signal Data | Test conditions unless otherwise stated VD=24V, IDQ=150mA ,TA=25 oC, Pulse width=100us, Pulse period =1ms 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 Pout (dBm) Pin (dBm) Pout vs. Pin (Vds=24V, Idq=150mA, Temp=25°C, Pulse =100us/1ms) Freq (GHz)=18 Freq (GHz)=17 Freq (GHz)=16 Freq (GHz)=15 Freq (GHz)=14 Freq (GHz)=13 Freq (GHz)=12 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 Gain (dB) Pin (dBm) Gain vs. Pin (Vds=24V, Idq=150mA, Temp=25°C, Pulse =100us/1ms) Freq (GHz)=18 Freq (GHz)=17 Freq (GHz)=16 Freq (GHz)=15 Freq (GHz)=14 Freq (GHz)=13 Freq (GHz)=12 500 1000 1500 2000 2500 3000 3500 4000 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 Id (mA) Pin (dBm) Drain Current vs. Pin (Vds=24V, Idq=150mA, Temp=25°C, Pulse =100us/1ms) Freq (GHz)=18 Freq (GHz)=17 Freq (GHz)=16 Freq (GHz)=15 Freq (GHz)=14 Freq (GHz)=13 Freq (GHz)=12 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 PAE (%) Pin (dBm) PAE vs. Pin (Vds=24V, Idq=150mA, Temp=25°C, Pulse =100us/1ms) Freq (GHz)=18 Freq (GHz)=17 Freq (GHz)=16 Freq (GHz)=15 Freq (GHz)=14 Freq (GHz)=13 Freq (GHz)=12 11 12 13 14 15 16 17 18 19 PAE (%) Freq (GHz) PAE vs. Freq (Vds=24V, Idq=150mA, Temp=25°C, Pulse =100us/1ms) Pin (dBm)=27 Pin (dBm)=26 Pin (dBm)=25 Pin (dBm)=24 Pin (dBm)=23 Pin (dBm)=18 Pin (dBm)=14 11 12 13 14 15 16 17 18 19 Pout (dBm) Freq (GHz) Pout vs. Freq (Vds=24V, Idq=150mA, Temp=25°C, Pulse =100us/1ms) Pin (dBm)=27 Pin (dBm)=26 Pin (dBm)=25 Pin (dBm)=24 Pin (dBm)=23 Pin (dBm)=18 Pin (dBm)=14

12-18GHz 20W GaN PA MMIC ICP1543 Datasheet Rev E © 2023 Microchip Technology Inc. and its subsidiaries Page 6 Typical Large Signal Data | Test conditions unless otherwise stated VD=20V, IDQ=150mA ,TA=25 oC, CW 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 Pout (dBm) Pin (dBm) Pout vs. Pin (Vds=20V, Idq=150mA, Temp=25°C, CW) Freq (GHz)=18 Freq (GHz)=17 Freq (GHz)=16 Freq (GHz)=15 Freq (GHz)=14 Freq (GHz)=13 Freq (GHz)=12 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 Gain (dB) Pin (dBm) Gain vs. Pin (Vds=20V, Idq=150mA, Temp=25°C, CW) Freq (GHz)=18 Freq (GHz)=17 Freq (GHz)=16 Freq (GHz)=15 Freq (GHz)=14 Freq (GHz)=13 Freq (GHz)=12 500 1000 1500 2000 2500 3000 3500 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 Id (mA) Pin (dBm) Drain Current vs. Pin (Vds=20V, Idq=150mA, Temp=25°C, CW) Freq (GHz)=18 Freq (GHz)=17 Freq (GHz)=16 Freq (GHz)=15 Freq (GHz)=14 Freq (GHz)=13 Freq (GHz)=12 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 PAE (%) Pin (dBm) PAE vs. Pin (Vds=20V, Idq=150mA, Temp=25°C, CW) Freq (GHz)=18 Freq (GHz)=17 Freq (GHz)=16 Freq (GHz)=15 Freq (GHz)=14 Freq (GHz)=13 Freq (GHz)=12 11 12 13 14 15 16 17 18 19 PAE (%) Freq (GHz) PAE vs. Freq (Vds=20V, Idq=150mA, Temp=25°C, CW) Pin (dBm)=27 Pin (dBm)=26 Pin (dBm)=25 Pin (dBm)=24 Pin (dBm)=23 Pin (dBm)=17 Pin (dBm)=11 11 12 13 14 15 16 17 18 19 Pout (dBm) Freq (GHz) Pout vs. Freq (Vds=20V, Idq=150mA, Temp=25°C, CW) Pin (dBm)=27 Pin (dBm)=26 Pin (dBm)=25 Pin (dBm)=24 Pin (dBm)=23 Pin (dBm)=17 Pin (dBm)=11

12-18GHz 20W GaN PA MMIC ICP1543 Datasheet Rev E © 2023 Microchip Technology Inc. and its subsidiaries Page 7 Typical Large Signal Data | Test conditions unless otherwise stated VD=24V, IDQ=150mA ,TA=25 oC, CW 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 Pout (dBm) Pin (dBm) Pout vs. Pin (Vds=24V, Idq=150mA, Temp=25°C, CW) Freq (GHz)=18 Freq (GHz)=17 Freq (GHz)=16 Freq (GHz)=15 Freq (GHz)=14 Freq (GHz)=13 Freq (GHz)=12 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 Gain (dB) Pin (dBm) Gain vs. Pin (Vds=24V, Idq=150mA, Temp=25°C, CW) Freq (GHz)=18 Freq (GHz)=17 Freq (GHz)=16 Freq (GHz)=15 Freq (GHz)=14 Freq (GHz)=13 Freq (GHz)=12 500 1000 1500 2000 2500 3000 3500 4000 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 Id (mA) Pin (dBm) Id vs. Pin (Vds=24V, Idq=150mA, Temp=25°C, CW) Freq (GHz)=18 Freq (GHz)=17 Freq (GHz)=16 Freq (GHz)=15 Freq (GHz)=14 Freq (GHz)=13 Freq (GHz)=12 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 PAE (%) Pin (dBm) PAE vs. Pin (Vds=24V, Idq=150mA, Temp=25°C, CW) Freq (GHz)=18 Freq (GHz)=17 Freq (GHz)=16 Freq (GHz)=15 Freq (GHz)=14 Freq (GHz)=13 Freq (GHz)=12 11 12 13 14 15 16 17 18 19 PAE (%) Freq (GHz) PAE vs. Freq (Vds=24V, Idq=150mA, Temp=25°C, CW) Pin (dBm)=27 Pin (dBm)=26 Pin (dBm)=25 Pin (dBm)=24 Pin (dBm)=23 Pin (dBm)=18 Pin (dBm)=14 11 12 13 14 15 16 17 18 19 Pout (dBm) Freq (GHz) Pout vs. Freq (Vds=24V, Idq=150mA, Temp=25°C, CW) Pin (dBm)=27 Pin (dBm)=26 Pin (dBm)=25 Pin (dBm)=24 Pin (dBm)=23 Pin (dBm)=18 Pin (dBm)=14

12-18GHz 20W GaN PA MMIC ICP1543 Datasheet Rev E © 2023 Microchip Technology Inc. and its subsidiaries Page 8 Typical Large Signal Data | Test conditions unless otherwise stated VD=24V, IDQ=150mA , Frequency=12GHz, Pulse width=100us, Pulse period =1ms 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 Pout (dBm) Pin (dBm) Pout vs. Pin (Vds=24V, Idq=150mA, Freq=12GHz, Pulse =100us/1ms) Temp (°C)=85, Freq (GHz) = 12 Temp (°C)=25, Freq (GHz) = 12 Temp (°C)=-40, Freq (GHz) = 12 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 Gain (dB) Pin (dBm) Gain vs. Pin (Vds=24V, Idq=150mA, Freq=12GHz, Pulse =100us/1ms) Temp (°C)=85, Freq (GHz) = 12 Temp (°C)=25, Freq (GHz) = 12 Temp (°C)=-40, Freq (GHz) = 12 500 1000 1500 2000 2500 3000 3500 4000 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 Id (mA) Pin (dBm) Drain Current vs. Pin (Vds=24V, Idq=150mA, Freq=12GHz, Pulse =100us/1ms) Temp (°C)=85, Freq (GHz) = 12 Temp (°C)=25, Freq (GHz) = 12 Temp (°C)=-40, Freq (GHz) = 12 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 PAE (%) Pin (dBm) PAE vs. Pin (Vds=24V, Idq=150mA, Freq=12GHz, Pulse =100us/1ms) Temp (°C)=85, Freq (GHz) = 12 Temp (°C)=25, Freq (GHz) = 12 Temp (°C)=-40, Freq (GHz) = 12 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 Ig (mA) Pin (dBm) Gate Current vs. Pin (Vds=24V, Idq=150mA, Freq=12GHz, Pulse =100us/1ms) Temp (°C)=85, Freq (GHz) = 12 Temp (°C)=25, Freq (GHz) = 12 Temp (°C)=-40, Freq (GHz) = 12

12-18GHz 20W GaN PA MMIC ICP1543 Datasheet Rev E © 2023 Microchip Technology Inc. and its subsidiaries Page 9 Typical Large Signal Data | Test conditions unless otherwise stated VD=24V, IDQ=150mA , Frequency=15GHz, Pulse width=100us, Pulse period =1ms 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 Pout (dBm) Pin (dBm) Pout vs. Pin (Vds=24V, Idq=150mA, Freq=15GHz, Pulse =100us/1ms) Temp (°C)=85, Freq (GHz) = 15 Temp (°C)=25, Freq (GHz) = 15 Temp (°C)=-40, Freq (GHz) = 15 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 Gain (dB) Pin (dBm) Gain vs. Pin (Vds=24V, Idq=150mA, Freq=15GHz, Pulse =100us/1ms) Temp (°C)=85, Freq (GHz) = 15 Temp (°C)=25, Freq (GHz) = 15 Temp (°C)=-40, Freq (GHz) = 15 500 1000 1500 2000 2500 3000 3500 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 Id (mA) Pin (dBm) Drain Current vs. Pin (Vds=24V, Idq=150mA, Freq=15GHz, Pulse =100us/1ms) Temp (°C)=85, Freq (GHz) = 15 Temp (°C)=25, Freq (GHz) = 15 Temp (°C)=-40, Freq (GHz) = 15 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 PAE (%) Pin (dBm) PAE vs. Pin (Vds=24V, Idq=150mA, Freq=15GHz, Pulse =100us/1ms) Temp (°C)=85, Freq (GHz) = 15 Temp (°C)=25, Freq (GHz) = 15 Temp (°C)=-40, Freq (GHz) = 15 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 Ig (mA) Pin (dBm) Gate Current vs. Pin (Vds=24V, Idq=150mA, Freq=15GHz, Pulse =100us/1ms) Temp (°C)=85, Freq (GHz) = 15 Temp (°C)=25, Freq (GHz) = 15 Temp (°C)=-40, Freq (GHz) = 15

12-18GHz 20W GaN PA MMIC ICP1543 Datasheet Rev E © 2023 Microchip Technology Inc. and its subsidiaries Page 10 Typical Large Signal Data | Test conditions unless otherwise stated VD=24V, IDQ=150mA , Frequency=18GHz, Pulse width=100us, Pulse period =1ms 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 Pout (dBm) Pin (dBm) Pout vs. Pin (Vds=24V, Idq=150mA, Freq=18GHz, Pulse =100us/1ms) Temp (°C)=85, Freq (GHz) = 18 Temp (°C)=25, Freq (GHz) = 18 Temp (°C)=-40, Freq (GHz) = 18 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 Gain (dB) Pin (dBm) Gain vs. Pin (Vds=24V, Idq=150mA, Freq=18GHz, Pulse =100us/1ms) Temp (°C)=85, Freq (GHz) = 18 Temp (°C)=25, Freq (GHz) = 18 Temp (°C)=-40, Freq (GHz) = 18 500 1000 1500 2000 2500 3000 3500 4000 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 Id (mA) Pin (dBm) Drain Current vs. Pin (Vds=24V, Idq=150mA, Freq=18GHz, Pulse =100us/1ms) Temp (°C)=85, Freq (GHz) = 18 Temp (°C)=25, Freq (GHz) = 18 Temp (°C)=-40, Freq (GHz) = 18 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 PAE (%) Pin (dBm) PAE vs. Pin (Vds=24V, Idq=150mA, Freq=18GHz, Pulse =100us/1ms) Temp (°C)=85, Freq (GHz) = 18 Temp (°C)=25, Freq (GHz) = 18 Temp (°C)=-40, Freq (GHz) = 18 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 Ig (mA) Pin (dBm) Gate Current vs. Pin (Vds=24V, Idq=150mA, Freq=18GHz, Pulse =100us/1ms) Temp (°C)=85, Freq (GHz) = 18 Temp (°C)=25, Freq (GHz) = 18 Temp (°C)=-40, Freq (GHz) = 18

12-18GHz 20W GaN PA MMIC ICP1543 Datasheet Rev E © 2023 Microchip Technology Inc. and its subsidiaries Page 11 Typical Large Signal Data | Test conditions unless otherwise stated IDQ=150mA , Pulse width=100us, Pulse period =1ms 41.5 42.5 43.5 44.5 11 12 13 14 15 16 17 18 19 Pout (dBm) Freq (GHz) Pout vs. Freq (Vds=20V, Idq=150mA, Pulse =100us/1ms) Temp (°C)=85, Pin (dBm) = 26 Temp (°C)=25, Pin (dBm) = 24 Temp (°C)=-40, Pin (dBm) = 23 41.5 42.5 43.5 44.5 11 12 13 14 15 16 17 18 19 Pout (dBm) Freq (GHz) Pout vs. Freq (Vds=24V, Idq=150mA, Pulse =100us/1ms) Temp (°C)=85, Pin (dBm) = 26 Temp (°C)=25, Pin (dBm) = 24 Temp (°C)=-40, Pin (dBm) = 23 11 12 13 14 15 16 17 18 19 PAE (%) Freq (GHz) PAE vs. Freq (Vds=24V, Idq=150mA, Pulse =100us/1ms) Temp (°C)=85, Pin (dBm) = 26 Temp (°C)=25, Pin (dBm) = 24 Temp (°C)=-40, Pin (dBm) = 23 11 12 13 14 15 16 17 18 19 PAE (%) Freq (GHz) PAE vs. Freq (Vds=20V, Idq=150mA, Pulse =100us/1ms) Temp (°C)=85, Pin (dBm) = 26 Temp (°C)=25, Pin (dBm) = 24 Temp (°C)=-40, Pin (dBm) = 23 11 12 13 14 15 16 17 18 19 Ig (mA) Freq (GHz) Gate Current vs. Freq (Vds=24V, Idq=150mA, Pulse =100us/1ms) Temp (°C)=85, Pin (dBm) = 26 Temp (°C)=25, Pin (dBm) = 24 Temp (°C)=-40, Pin (dBm) = 23 11 12 13 14 15 16 17 18 19 Ig (mA) Freq (GHz) Gate Current vs. Freq (Vds=20V, Idq=150mA, Pulse =100us/1ms) Temp (°C)=85, Pin (dBm) = 26 Temp (°C)=25, Pin (dBm) = 24 Temp (°C)=-40, Pin (dBm) = 23

12-18GHz 20W GaN PA MMIC ICP1543 Datasheet Rev E © 2023 Microchip Technology Inc. and its subsidiaries Page 12 Typical Large Signal Data | Test conditions unless otherwise stated IDQ=150mA , CW 40.5 41.5 42.5 43.5 44.5 45.5 11 12 13 14 15 16 17 18 19 Pout (dBm) Freq (GHz) Pout vs. Freq (Vds=24V, Idq=150mA, CW) Temp (°C)=85, Pin (dBm) = 27 Temp (°C)=25, Pin (dBm) = 25 Temp (°C)=-40, Pin (dBm) = 23 11 12 13 14 15 16 17 18 19 PAE (%) Freq (GHz) PAE vs. Freq (Vds=24V, Idq=150mA, CW) Temp (°C)=85, Pin (dBm) = 27 Temp (°C)=25, Pin (dBm) = 25 Temp (°C)=-40, Pin (dBm) = 23 11 12 13 14 15 16 17 18 19 Ig (mA) Freq (GHz) Gate Current vs. Freq (Vds=24V, Idq=150mA, CW) Temp (°C)=85, Pin (dBm) = 27 Temp (°C)=25, Pin (dBm) = 25 Temp (°C)=-40, Pin (dBm) = 23 11 12 13 14 15 16 17 18 19 Pout (dBm) Freq (GHz) Pout vs. Freq (Vds=20V, Idq=150mA, CW) Temp (°C)=85, Pin (dBm) = 27 Temp (°C)=25, Pin (dBm) = 25 Temp (°C)=-40, Pin (dBm) = 23 11 12 13 14 15 16 17 18 19 PAE (%) Freq (GHz) PAE vs. Freq (Vds=20V, Idq=150mA, CW) Temp (°C)=85, Pin (dBm) = 27 Temp (°C)=25, Pin (dBm) = 25 Temp (°C)=-40, Pin (dBm) = 23 11 12 13 14 15 16 17 18 19 Ig (mA) Freq (GHz) Gate Current vs. Freq (Vds=20V, Idq=150mA, CW) Temp (°C)=85, Pin (dBm) = 27 Temp (°C)=25, Pin (dBm) = 25 Temp (°C)=-40, Pin (dBm) = 23

12-18GHz 20W GaN PA MMIC ICP1543 Datasheet Rev E © 2023 Microchip Technology Inc. and its subsidiaries Page 13 Typical Two Tone Data | Test conditions unless otherwise stated VD=24V, IDQ=150mA, Tone Spacing = 1MHz -45 -40 -35 -30 -25 -20 -15 -10 26 28 30 32 34 36 38 40 42 44 46 IM3(dBc) Pout (dBm) IM3 vs. Pout (Freq=12GHz, Vds=24, Temp=25°C) Idq (mA)=400, Freq (GHz) = 12 Idq (mA)=350, Freq (GHz) = 12 Idq (mA)=300, Freq (GHz) = 12 Idq (mA)=250, Freq (GHz) = 12 Idq (mA)=200, Freq (GHz) = 12 Idq (mA)=150, Freq (GHz) = 12 Idq (mA)=100, Freq (GHz) = 12 -45 -40 -35 -30 -25 -20 -15 -10 26 28 30 32 34 36 38 40 42 44 46 IM3(dBc) Pout (dBm) IM3 vs. Pout (Freq=15GHz, Vds=24, Temp=25°C) Idq (mA)=400, Freq (GHz) = 15 Idq (mA)=350, Freq (GHz) = 15 Idq (mA)=300, Freq (GHz) = 15 Idq (mA)=250, Freq (GHz) = 15 Idq (mA)=200, Freq (GHz) = 15 Idq (mA)=150, Freq (GHz) = 15 Idq (mA)=100, Freq (GHz) = 15 -45 -40 -35 -30 -25 -20 -15 -10 26 28 30 32 34 36 38 40 42 44 46 IM3 (dBc) Pout (dBm) IM3 vs. Pout (Freq=18GHz, Vds=24, Temp=25°C) Idq (mA)=400, Freq (GHz) = 18 Idq (mA)=350, Freq (GHz) = 18 Idq (mA)=300, Freq (GHz) = 18 Idq (mA)=250, Freq (GHz) = 18 Idq (mA)=200, Freq (GHz) = 18 Idq (mA)=150, Freq (GHz) = 18 Idq (mA)=100, Freq (GHz) = 18 -45 -40 -35 -30 -25 -20 -15 -10 26 28 30 32 34 36 38 40 42 44 46 IM3(dBc) Pout (dBm) IM3 vs. Pout (Vds=24, idq=150mA, Temp=25°C) Freq (GHz)=18 Freq (GHz)=17 Freq (GHz)=16 Freq (GHz)=15 Freq (GHz)=14 Freq (GHz)=13 Freq (GHz)=12 -45 -40 -35 -30 -25 -20 -15 -10 26 28 30 32 34 36 38 40 42 44 46 IM3 (dBc) Pout (dBm) IM3 vs. Pout (Vds=24, idq=150mA, Temp=-40°C) Freq (GHz)=18 Freq (GHz)=17 Freq (GHz)=16 Freq (GHz)=15 Freq (GHz)=14 Freq (GHz)=13 Freq (GHz)=12 -45 -40 -35 -30 -25 -20 -15 -10 26 28 30 32 34 36 38 40 42 44 46 IM3 (dBc) Pout (dBm) IM3 vs. Pout (Vds=24, idq=150mA, Temp=85°C) Freq (GHz)=18 Freq (GHz)=17 Freq (GHz)=16 Freq (GHz)=15 Freq (GHz)=14 Freq (GHz)=13 Freq (GHz)=12

12-18GHz 20W GaN PA MMIC ICP1543 Datasheet Rev E © 2023 Microchip Technology Inc. and its subsidiaries Page 14 Mechanical Drawing Function Description 1 80x150 RFIN 50 ohm RF input, DC blocked 2,22 85x85 VG1 First stage gate bias, decoupling and bypass caps required, must be biased from both sides 4,20 85x85 VG2 Second stage gate bias, decoupling and bypass caps required, must be biased from both sides 6,18 85x85 VD1 First stage drain voltage, decoupling and bypass caps required, must be biased from both sides 8,16 150x85 VD2 Second stage drain voltage, decoupling and bypass caps required, must be biased from both sides 9,15 85x85 VG3 Third stage gate bias, decoupling and bypass caps required, must be biased from both sides 10,14 230x85 VD3 Third stage drain voltage, decoupling and bypass caps required, must be biased from both sides 12 80x150 RFOUT 50 ohm RF output, DC blocked, pad is DC grounded 3,5,7,17, 19,21 85x85 GND Topside ground 11,13 150x85 GND Topside ground Units: mm Thickness: 0.1mm Backside is RF and DC ground

12-18GHz 20W GaN PA MMIC ICP1543 Datasheet Rev E © 2023 Microchip Technology Inc. and its subsidiaries Page 15 Application Circuit Quantity Description Manufacturer Part No. C1-C10 1000pF 10 1000pF Capacitor 0402, COG, 50V Various C11-C14 10nF 4 10nF Capacitor 0402, COG, 50V Various C15-C24 1uF 10 1uF Capacitor 0603, 35V Various

12-18GHz 20W GaN PA MMIC ICP1543 Datasheet Rev E © 2023 Microchip Technology Inc. and its subsidiaries Page 16 Evaluation Circuit Assembly Drawing Quantity Description Manufacturer Part No. C1-C10 1000pF 10 1000pF Capacitor 0402, COG, 50V Various C11-C14 10nF 4 10nF Capacitor 0402, COG, 50V Various C15-C24 1uF 10 1uF Capacitor 0603, 35V Various R1-R6 0ohm 6 0 ohm resistor 0402 (link) Various Bill of Materials Die Bonding Assembly Guidance Amplifier must be biased from both sides. Optimum RF power performance achieved by minimizing output RF bond wire length. Interconnect assembly Notes

  • Ball bonding or wedge bonding is preferred technique
  • Force, time and ultrasonic parameters are critical
  • Aluminum wire bonding is not recommended
  • Bond Wire diameter of 1mil is recommended Die attach of component using adhesive
  • Vacuum collets are preferred method of pickup.
  • Pickup method must consider the avoidance of die air bridges.
  • Silver sintered epoxy is recommended -Namics H9890-11, Kyocera CT2700R7S Die attach of component using Eutectic
  • Flux-less gold-tin (AuSn) (80% Au, 20% Sn with a melting point of 280ºC) preform is preferred between the die and attached surface.
  • Recommended preform should be approximately 0.0012” thick.
  • Die bonder using heated collet with a temperature of 310ºC and die scrubbing should be used to ensure wetting and prevent formation of voids.
  • Exposure to extreme temperature should be kept to a minimum.
  • The optimum die attach environment is nitrogen atmosphere. Reflow Process
  • Maximum temperature 320ºC for 30 seconds.
  • Material matching for Coefficient of thermal expansion is crucial for long-term reliability

12-18GHz 20W GaN PA MMIC ICP1543 Datasheet Rev E © 2023 Microchip Technology Inc. and its subsidiaries Page 17 Handling Procedures Please observe the following precautions to avoid damage: Static Sensitivity Integrated Circuits are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be used when handling these devices. Bias-Up Procedure  Set VG=-5V  Set VD to 24V  Adjust VG positive until ID quiescent is 150mA (Typical Vg=-1.9V)  Limit ID to 5A  Apply RF Signal Bias-down Procedure  Turn off RF  Turn off VD, allow drain capacitor to discharge  Turn off VG.

12-18GHz 20W GaN PA MMIC ICP1543 Datasheet Rev E © 2023 Microchip Technology Inc. and its subsidiaries Page 18 The Microchip Website Microchip provides online support via our website at www.microchip.com/. This website is used to make files and infor- mation easily available to customers. Some of the content available includes:

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  • Technical Support Customers should contact their distributor, representative or ESE for support. Local sales offices are also available to help customers. A listing of sales offices and locations is included in this document. Technical support is available through the website at: www.microchip.com/support Microchip Devices Code Protection Feature Note the following details of the code protection feature on Microchip products: Microchip products meet the specifications contained in their particular Microchip Data Sheet.
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12-18GHz 20W GaN PA MMIC ICP1543 Datasheet Rev E © 2023 Microchip Technology Inc. and its subsidiaries Page 19 THIS INFORMATION IS PROVIDED BY MICROCHIP "AS IS". MICROCHIP MAKES NO REPRESENTA- TIONS OR WARRANTIES OF ANY KIND WHETHER EXPRESS OR IMPLIED, WRITTEN OR ORAL, STATUTORY OR OTHERWISE, RELATED TO THE INFORMATION INCLUDING BUT NOT LIMITED TO ANY IMPLIED WARRANTIES OF NON-INFRINGEMENT, MERCHANTABILITY, AND FITNESS FOR A PARTICULAR PURPOSE, OR WARRANTIES RELATED TO ITS CONDITION, QUALITY, OR PER- FORMANCE. IN NO EVENT WILL MICROCHIP BE LIABLE FOR ANY INDIRECT, SPECIAL, PUNITIVE, INCI- DENTAL, OR CONSEQUENTIAL LOSS, DAMAGE, COST, OR EXPENSE OF ANY KIND WHATSOEVER RELATED TO THE INFORMATION OR ITS USE, HOWEVER CAUSED, EVEN IF MICROCHIP HAS BEEN AD- VISED OF THE POSSIBILITY OR THE DAMAGES ARE FORESEEABLE. TO THE FULLEST EXTENT ALLOWED BY LAW, MICROCHIP'S TOTAL LIABILITY ON ALL CLAIMS IN ANY WAY RELATED TO THE INFORMATION OR ITS USE WILL NOT EXCEED THE AMOUNT OF FEES, IF ANY, THAT YOU HAVE PAID DIRECTLY TO MICROCHIP FOR THE INFORMATION. Use of Microchip devices in life support and/or safety applications is entirely at the buyer's risk, and the buyer agrees to defend, indemnify and hold harmless Microchip from any and all damages, claims, suits, or expenses resulting from such use. No licenses are conveyed, implicitly or otherwise, under any Micro- chip intellectual property rights unless otherwise stated. Trademarks The Microchip name and logo, the Microchip logo, Adaptec, AVR, AVR logo, AVR Freaks, BesTime, BitCloud, CryptoMemory, CryptoRF, dsPIC, flexPWR, HELDO, IGLOO, JukeBlox, KeeLoq, Kleer, LANCheck, LinkMD, maXStylus, maXTouch, MediaLB, megaAVR, Microsemi, Microsemi logo, MOST, MOST logo, MPLAB, OptoLyzer, PIC, picoPower, PICSTART, PIC32 logo, PolarFire, Prochip Designer, QTouch, SAM-BA, SenGenuity, SpyNIC, SST, SST Logo, SuperFlash, Symmetricom, SyncServer, Tachyon, TimeSource, tinyAVR, UNI/O, Vectron, and XMEGA are registered trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. AgileSwitch, APT, ClockWorks, The Embedded Control Solutions Company, EtherSynch, Flashtec, Hyper Speed Control, HyperLight Load, Libero, motorBench, mTouch, Powermite 3, Precision Edge, ProASIC, ProASIC Plus, ProASIC Plus logo, Quiet- Wire, SmartFusion, SyncWorld, Temux, TimeCesium, TimeHub, TimePictra, TimeProvider, TrueTime, and ZL are registered trademarks of Microchip Technology Incorporated in the U.S.A. Adjacent Key Suppression, AKS, Analog-for-the-Digital Age, Any Capacitor, AnyIn, AnyOut, Augmented Switching, BlueSky, BodyCom, Clockstudio, CodeGuard, CryptoAuthentication, CryptoAutomotive, CryptoCompanion, CryptoController, dsPICDEM, dsPICDEM.net, Dynamic Average Matching, DAM, ECAN, Espresso T1S, EtherGREEN, GridTime, IdealBridge, In-Circuit Serial Programming, ICSP, INICnet, Intelligent Paralleling, IntelliMOS, Inter-Chip Connectivity, JitterBlocker, Knob-on-Display, KoD, maxCrypto, maxView, memBrain, Mindi, MiWi, MPASM, MPF, MPLAB Certified logo, MPLIB, MPLINK, MultiTRAK, NetDetach, Omniscient Code Generation, PICDEM, PICDEM.net, PICkit, PICtail, PowerSmart, PureSilicon, QMatrix, REAL ICE, Ripple Blocker, RTAX, RTG4, SAM- ICE, Serial Quad I/O, simpleMAP, SimpliPHY, SmartBuffer, SmartHLS, SMART-I.S., storClad, SQI, SuperSwitcher, SuperSwitcher II, Switchtec, SynchroPHY, Total Endurance, Trusted Time, TSHARC, USBCheck, VariSense, VectorBlox, VeriPHY, ViewSpan, WiperLock, XpressConnect, and ZENA are trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. SQTP is a service mark of Microchip Technology Incorporated in the U.S.A. The Adaptec logo, Frequency on Demand, Silicon Storage Technology, and Symmcom are registered trademarks of Microchip Technology Inc. in other countries. GestIC is a registered trademark of Microchip Technology Germany II GmbH & Co. KG, a subsidiary of Microchip Technology Inc., in other countries. All other trademarks mentioned herein are property of their respective companies. © 2022, Microchip Technology Incorporated and its subsidiaries. All Rights Reserved. ISBN: 978-1-5224-9497-3

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