EU01Z DSK | Alldatasheet
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Case: JEDEC DO-41, molded plastic Method 208 Mounting: Any Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. Maximum peak repetitive reverse voltage V RRM V Max imum RMS v oltage V RMS V Maximum DC blocking voltage V DC V Maximum average forw ard rectified current 9.5mm lead length @T A =75 Peak forw ard surge current 10ms single half-sine-w ave superimplsed on rated load @T J =125 Maximum instantaneous forw ard voltage @ 0.25A V F V Maximum reverse current @T A =25 at Rated DC blocking voltage @T A =100 M axim um reverse recovery tim e (Note1) t rr ns Typical junction capacitance (Note2) C J pF Typical thermal resistance (Note3) R θJL Operating junction temperature range T J Storage temperature range T STG 2. Measured at 1.0MHZ and applied rev erse of 4.0V DC. 15.0 2.5 3. Themal resistance f rom junction to ambient. - 55 ----- + 150 10.0 150.0 100 - 55 ----- + 150 20 15 EU01Z(Z) - - - EU01A(Z) 280 400 600 420 UNITS EU01Z EU01A EU01 High current capability Polarity: Color band denotes cathode Weight: 0.012 ounces, 0.34 grams 200 similar solvents Easily cleaned with freon, Alcohol, lsopropand and Terminals: Axial leads,solderable per MIL-STD-202, Note: 1. Measured with I F =0.5A, I R =1A, I rr =0.25A. 140 I FSM I F(AV) 400 A A A 0.25 200 I R 600 HIGH EFFICIENCY RECTIFIERS VOLTAGE RANGE: 200--- 600 V CURRENT: 0.25A MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS DO - 41 Low leakage Low forward voltage drop Dimensions in millimeters www.diode.kr Diode Semiconductor Korea
AMBIENT TEMPERATURE, AVERAGE FORWARD RECTIFIED CURRENT INSTANTANEOUS FORWARD CURRENT INSTANTANEOUS FORWARD VOLTAGE, VOLTS FIG.5 --TYPICAL JUNCTION CAPACITANCE PEAK FORWARD SURGE CURRENT AMPERES NUMBER O F CYCLES AT 60Hz REVERSE VOLTAGE,VOLTS JUNCTION CAPACITANCE,pF EU01Z (Z) - - - EU01A(Z) FIG.1 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC FIG.4 -- PEAK FORWARD SURGE CURRENT SE T TIM E BASE FO R 10/20 ns/cm FIG.2 -- TYPICAL FORWARD CHARACTERISTIC FIG.3 -- FORWARD DERATING CURVE NOTES:1.RISE TIM E = 7ns M AX.INPUT IM PEDANCE =1M . 22pF. JJJJ 2.RISE TIM E =10ns M AX.SOURCE IMPEDANCE=50 PULSE GENERATOR (NOTE2) D.U.T. NONIN- DUCTIVE N N1 . OSCILLOSCOPE (NOTE1) (+) 25VDC (approx) (-) t rr -1.0A -0.25A +0.5A 1cm 0 2 55 0 7 51 0 0 1 2 5 1 5 0 0.05 0.01 0.15 0.20 0 .25 Single Phase Half Wave 60Hz Resistivs or Inductive Load 0.40 0.001 0.01 0.1 T J =25 Pulse Width=300 µ S 1 5 10 50 T J =25 8.3ms Single Half Sine-W ave T J =25 100 200 0.1 0.2 0.4 1 2 4 10 40 10020 EUO1Z-EUO1 EUO1A www.diode.kr Diode Semiconductor Korea