ETX500T JDSU | Alldatasheet

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Technical content

Key Features • High responsivity in near infrared spectrum  Low dark current for high accuracy  High shunt resistance  Linear over wide range of input optical power  Active diameters of 0.5 and 1 mm The JDSU ETX 500T and ETX 1000T series large-area InGaAs PIN photodetectors have photosensitive areas with diameters of 500 and 1000 µm, respectively. These photodiodes offer high responsivity in the 800 – 1700 nm spectrum, and are designed for use in instrumentation, sensing, and range- finding applications. The detectors feature high sensitivity and linear spectral responsivity over a broad range of input powers. When operating in photovoltaic mode, a noise current density of 10 fA/Hz 1/2 is typical at room temperature. When reverse-biased for greater bandwidth, a noise floor of 60fA/Hz 1/2 at -5 V is typical. Linear spectral response results from the low series resistance of the photodiodes. The ETX 500T and ETX 1000T series are optimal for the high-speed, differential mode measurements common in precisio n optical power meters, optical fiber identifiers, and optical loss test sets. The ETX 500T and ETX1000T photodiodes are packaged in hermetically-sealed TO cans.

Applications

 Optical power meters  Optical fiber identifiers  Optical attenuation test sets  Near infrared spectroscopy  Infrared range finders Large-area InGaAs Photodiodes ETX 500 and ETX 1000 Series NORTH AMERICA : 800 498-JDSU (5378) WEBSITE : www.jdsu.comWORLDWIDE : +800 5378-JDSU

(Specifications in mm unless otherwise noted.)Dimensions Diagram: ETX 500T, ETX 1000T LARGE AREA INGAAS PHOTODIODES 2 3 Electrical Schematic 45° PIN DIA 1.27 Ø2.54 5.4 25.4 1.0 4.70 3.20 2.50 0.5 to Chip Wire Bond

LARGE AREA INGAAS PHOTODIODES Parameter ETX 500T ETX 1000T Electrical and Optical Specifications Conditions 25 °C, V R = 5 V 25 °C, V R = 5 V Active diameter Typical 0.5 mm 1.0 mm Responsivity at 850 nm Minimum 0.10 A/W 0.10 A/W Typical 0.20 A/W 0.20 A/W Responsivity at 1300 nm Minimum 0.80 A/W 0.80 A/W Typical 0.90 A/W 0.90 A/W Responsivity at 1500 nm Typical 0.95 A/W 0.95 A/W Dark current Typical 12 nA 50 nA Maximum 100 nA 400 nA Shunt resistance1 Minimum 5.0 M Ω 2.0 MΩ Typical 250 M Ω 50 MΩ Linearity2 Typical ±0.15 dB ±0.15 dB T otal capacitance3 Typical 35 pF 100 pF Maximum 50 pF 150 pF Bandwidth4 Typical 140 MHz 35 MHz Maximum Ratings Reverse voltage Typical 20 V 20 V Reverse current5 Typical 10 mA 10 mA Forward current6 Typical 10 mA 10 mA Power dissipation Typical 100 mW 100 mW Operating temperature -40 to 85°C -40 to 85°C Storage temperature -40 to 85°C -40 to 85°C 1. VR = 10 mV 2. For ETX 500T and ETX 1000T, to 9 dBm 3. For ETX 500T and ETX 1000T, V R = 0 V 4. -3 dB point into a 50 Ω load 5. Under reverse bias, current at which device may be damaged 6. Under forward bias, current at which device may be damaged

NORTH AMERICA : 800 498-JDSU (5378) WEBSITE : www.jdsu.comWORLDWIDE : +800 5378-JDSU

Ordering Information

For more information on this or other products and their availability, please contact your local JDSU account manager or JDSU directly at 1-800-498-JDSU (5378) in North America and +800-5378-JDSU worldwide, or via e-mail at customer.service@jdsu.com. Sample: ETX 500T LARGE AREA INGAAS PHOTODIODES Product Code Description ETX 500T 0.5 mm diod e in TO46 package ETX 1000T 1.0 mm diod e in TO46 package Precaution for Use Glass windows must be cleaned with 99 percent pure, reagent grade Isopropanol. ESD PROTECTION IS IMPERATIVE. Use of grounding straps, antistatic mats, and other standard ESD protective equipment is recommended when handling or testing any InGaAs PIN or any other junction photodiode. Quality and Reliability JDSU maintains a strict quality control program throughout the design and manufacturing process of its photodetectors. All products are evaluated against MIL-STD 883C, GR468, or custom specifications. JDSU purges each photodiode for 18 hours at 125°C, with bias applied. Long-term life-testing has indicated an expected lifetime of at least 10 7 hours for the large area InGaAs photodiodes ETX 500 and ETX 1000T. Contact JDSU for details of specific qualification tests performed on the large- area InGaAs photodiode series. Product specifications and descriptions in this document subject to change without notice. © 2008 JDS Uniphase Corporation 301 37357 002 1108 ETX500.DS.CC.AE November 2008