ESM765-800 STMICROELECTRONICS | Alldatasheet
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ESM765-800® August 1999 - Ed: 2B RECOVERY RECTIFIER DIODES IF(AV) 10 A VRRM 800 V Tj (max) 150°C VF (max) 1.35 V trr (max) 300 ns MAIN PRODUCTS CHARACTERISTICS Fast recovery rectifiers suited for applications in combination with superswitch transistors.
DESCRIPTION
Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage tp ≤ 20µs 800 V IF(RMS) RMS forward current 16 A IF(AV) Average forward current Tc = 100°C δ = 0.5 10 A IFSM Surge non repetitive forward current Tp = 10 ms Sinusoidal 120 A Ptot Power dissipation Tc = 100°C 20 W Tstg Storage temperature range - 40 to + 150 °C Tj Maximum operating junction temperature + 150 HIGH VOLTAGE CAPABILITY FAST AND SOFT RECOVERY THE SPECIFICATIONS AND CURVES ENABLE THE DETERMINATION OF THE trr AND I RM AT 100°C UNDER USERS CONDITIONS MOTOR CONTROLS AND CONVERTERS SWITCH MODE POWER SUPPLIES INSULATED PACKAGE: TO-220AC Insulating voltage = 2500 V RMS
FEATURES
K A TO-220AC
Symbol Parameters Test conditions Min. Typ. Max. Unit IR * Reverse leakage current Tj = 25°CV R = VRRM 20 mA Tj = 100°C 1m A VF ** Forward voltage drop Tj = 25 °CI F = 10 A 1.4 V Tj = 100°C 1.35 Pulse test : * tp = 5 ms, δ < 2 % To evaluate the conduction losses use the following equation : P = 1.2 x IF(AV) + 0.015 x IF2(RMS) VF = 1.2 + 0.015 IF STATIC ELECTRICAL CHARACTERISTICS Symbol Test conditions Min. Typ. Max. Unit trr T j = 25°CI F = 1A dIF/dt = - 15A/µs VR = 30V 300 ns Qrr T j = 25°CI F = 10A dIF/dt = - 50A/µs VR = 200V 2.3 µC RECOVERY CHARACTERISTICS Symbol Parameter Value Unit R th(j-c) Junction to case 2° C / W THERMAL RESISTANCES Fig. 1: Low frequency power losses versus average current. Fig. 2: Peak current versus form factor. ESM765-800
Fig. 3: Non repetitive peak surge current versus overload duration. Fig. 4: Thermal impedance versus pulse width. Fig. 5: Voltage drop versus forward current. Fig. 6: Capacitance versus applied reverse voltage ESM765-800
Fig. 7: Recovery charge versus dIF/dt. Fig. 8: Recovery time versus dIF/dt. Fig. 9: Peak reverse current versus dIF/dt. ESM765-800
A C D E M Ø I G F REF. DIMENSIONS Millimeters Inches Min. Max. Min. Max. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 0.107 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.066 G 4.95 5.15 0.194 0.202 H2 10.00 10.40 0.393 0.409 L2 16.40 typ. 0.645 typ. L4 13.00 14.00 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.20 6.60 0.244 0.259 L9 3.50 3.93 0.137 0.154 M 2.6 typ. 0.102 typ. Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap- proval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com ESM765-800