ESM6045

ESM6045DV STMICROELECTRONICS | Alldatasheet

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NPN DARLINGTON POWER MODULE n HIGH CURRENT POWER BIPOLAR MODULE n VERY LOW R thJUNCTION CASE n SPECIFIED ACCIDENTAL OVERLOAD AREAS n ULTRAFAST FREEWHEELING DIODE n ISOLATED CASE (2500V RMS) n EASY TO MOUNT n LOW INTERNAL PARASITIC INDUCTANCE INDUSTRIAL APPLICATIONS: n MOTOR CONTROL n SMPS & UPS n DC/DC & DC/AC CONVERTERS n WELDING EQUIPMENT INTERNAL SCHEMATIC DIAGRAM September 1997 ISOTOP ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V CEV Collector-Emitter Voltage (VBE = -5 V) 600 V V CEO(sus) Collector-Emitter Voltage (IB = 0) 450 V V EBO Emitter-Base Voltage (IC =0 ) 7 V IC Collector Current 84 A ICM Collector Peak Current (tp = 10 ms) 126 A IB Base Current 8 A IBM Base Peak Current (tp =1 0m s ) 1 6 A P tot Total Dissipation at Tc =2 5 oC 250 W Tstg Storage Temperature -55 to 150 oC Tj Max. Operating Junction Temperature 150 oC V ISO Insulation Withstand Voltage (AC-RMS) 2500 oC

Thermal Resistance Junction-case (transistor) Max Thermal Resistance Junction-case (diode) Max Thermal Resistance Case-heatsink With Conductive Grease Applied Max 0.5 1.2 0.05 oC/W oC/W oC/W ELECTRICAL CHARACTERISTICS (Tcase =2 5oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit ICER # Collector Cut-off Current (RBE =5 Ω ) V CE =V CEV V CE =V CEV Tj = 100 oC 1.5 mA mA ICEV # Collector Cut-off Current (VBE =- 5 ) VCE =V CEV V CE =V CEV Tj = 100 oC mA mA IEBO # Emitter Cut-off Current (IC =0 ) V EB =5V 1 m A V CEO(SUS) * Collector-Emitter Sustaining Voltage IC =0 . 2A L=2 5m H V clamp = 450 V 450 V hFE ∗ DC Current Gain I C =7 0A V CE = 5 V 120 V CE(sat)∗ Collector-Emitter Saturation Voltage IC =5 0A I B =1A IC =5 0A I B =1A T j = 100 oC IC =7 0A I B =4A IC =7 0A I B =4A T j = 100 oC 1.2 1.6 1.35 1.7 V V V V V BE(sat)∗ Base-Emitter Saturation Voltage IC =7 0A I B =4A IC =7 0A I B =4A T j = 100 oC 2.3 2.4 3 V V diC / d t R a t eo fR i s eo f On-state Collector V CC =3 0 0V R C =0 t p =3 µs IB1 =1 . 5A Tj = 100 oC 375 450 A/ µ s V CE (3 µs)•• Collector-Emitter Dynamic Voltage V CC = 300 V R C =6 Ω IB1 =1 . 5A T j = 100 oC 69V V CE (5 µ s)•• Collector-Emitter Dynamic Voltage V CC = 300 V R C =6 Ω IB1 =1 . 5A T j = 100 oC 34 . 5V ts tf tc Storage Time Fall Time Cross-over Time I C =5 0A V CC =5 0V V BB =- 5V R BB =0 . 3 Ω V clamp = 450 V I B1 =1A L = 0.05 mH T j = 100 oC 3.5 0.3 0.8 5.5 0.5 1.7 µs µs µs V CEW Maximum Collector Emitter Voltage Without Snubber I CWoff =8 4A I B1 =4A V BB =- 5V V CC =5 0V L = 0.03 mH R BB =0 . 3Ω Tj =1 2 5oC 450 V V F ∗ Diode Forward Voltage IF =7 0A T j =1 0 0oC1 . 6 1 . 9 V IRM Reverse Recovery Current V CC =2 0 0V IF =7 0A diF /dt = -375 A/µsL < 0 . 0 5µH Tj =1 0 0oC 38 45 A ∗ Pulsed: Pulse duration = 300µs, duty cycle 1.5 % # See test circuits in databook introduction To evaluate the conductionlosses of the diode use the following equations: V F = 1.5 + 0.0055 IF P = 1.5 IF(AV) + 0.0055 I2F(RMS) ESM6045DV

Collector Emitter Saturation Voltage Thermal Impedance Collector-emitter Voltage Versus base-emitter Resistance Base-Emitter Saturation Voltage ESM6045DV

Switching Times Inductive Load Foward Biased SOA Forward Biased AOA Switching Times Inductive Load Versus Temperature ESM6045DV

Turn-on Switching Waveforms Dc Current Gain Typical V F Versus IF Peak Reverse Current Versus diF/dt Turn-on Switching Test Circuit ESM6045DV

Turn-on Switching Test Circuit Turn-off Switching Waveforms Turn-off Switching Test Circuit of Diode Turn-off Switching Waveform of Diode ESM6045DV

DIM. mm inch A 11.8 12.2 0.466 0.480 B 8.9 9.1 0.350 0.358 C 1.95 2.05 0.076 0.080 D 0.75 0.85 0.029 0.033 E 12.6 12.8 0.496 0.503 F 25.15 25.5 0.990 1.003 G 31.5 31.7 1.240 1.248 H 4 0.157 J 4.1 4.3 0.161 0.169 K 14.9 15.1 0.586 0.594 L 30.1 30.3 1.185 1.193 M 37.8 38.2 1.488 1.503 N 4 0.157 O 7.8 8.2 0.307 0.322 B E H O N J K L M F A C G D ISOTOP MECHANICAL DATA ESM6045DV

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringementof patents or other rightsof third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replacesall informationpreviously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems withoutexpress written approval of SGS-THOMSON Microelectonics.  1997 SGS-THOMSONMicroelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON MicroelectronicsGROUP OF COMPANIES Australia - Brazil - Canada - China - France- Germany - Hong Kong - Italy - Japan- Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - UnitedKingdom - U.S.A .. . ESM6045DV