NPN Darlington power module

Document overview

  • Manufacturer or author: STMICROELECTRONICS
  • PDF pages: 8

Technical content

NPN DARLINGTON POWER MODULE ■ HIGH CURRENT POWER BIPOLAR MODULE ■ VERY LOW R th JUNCTION CASE ■ SPECIFIED ACCIDENTAL OVERLOAD AREAS ■ ULTRAFAST FREEWHEELING DIODE ■ INSULATED PACKAGE (UL COMPLIANT) ■ EASY TO MOUNT ■ LOW INTERNAL PARASITIC INDUCTANCE APPLICATIONS: ■ MOTOR CONTROL ■ SMPS & UPS ■ DC/DC & DC/AC CONVERTERS ■ WELDING EQUIPMENT INTERNAL SCHEMATIC DIAGRAM September 2003 ISOTOP ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V CEV Collector-Emitter Voltage (VBE = -5 V) 600 V V CEO(sus) Collector-Emitter Voltage (IB = 0) 450 V V EBO Emitter-Base Voltage (IC = 0) 7 V IC Collector Current 42 A ICM Collector Peak Current (tp = 10 ms) 63 A IB Base Current 4 A IBM Base Peak Current (tp = 10 ms) 8 A P tot Total Dissipation at Tc = 25 oC 150 W Tstg Storage Temperature -55 to 150 oC Tj Max. Operating Junction Temperature 150 oC Obsolete Product(s) - Obsolete Product(s) Obsolete Product(s) - Obsolete Product(s)

Obsolete Product(s) - Obsolete Product(s) THERMAL DATA R thj-case R thj-case R thc-h Thermal Resistance Junction-case (transistor) Max Thermal Resistance Junction-case (diode) Max Thermal Resistance Case-heatsink With Conductive Grease Applied Max 0.83 1.5 0.05 oC/W oC/W oC/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit ICER # Collector Cut-off Current (RBE = 5 Ω ) V CE = VCEV V CE = VCEV Tj = 100 oC 1.5 mA mA ICEV # Collector Cut-off Current (VBE = -5) V CE = VCEV V CE = VCEV Tj = 100 oC mA mA IEBO # Emitter Cut-off Current (IC = 0) V EB = 5 V 1 mA V CEO(SUS) * Collector-Emitter Sustaining Voltage (IB = 0) IC = 0.2 A L = 25 mH V clamp = 450 V 450 V hFE ∗ DC Current Gain I C = 35 A VCE = 5 V 220 V CE(sat)∗ Collector-Emitter Saturation Voltage IC = 25 A IB = 0.5 A IC = 25 A IB = 0.5 A Tj = 100 oC IC = 35 A IB = 2 A IC = 35 A IB = 2 A Tj = 100 oC 1.15 1.3 1.4 1.5 V V V V V BE(sat)∗ Base-Emitter Saturation Voltage IC = 35 A IB = 2 A IC = 35 A IB = 2 A Tj = 100 oC 2.3 2.3 3 V V diC /dt Rate of Rise of On-state Collector V CC = 300 V RC = 0 tp = 3 µs IB1 = 0.75 A Tj = 100 oC 200 250 A/ µ s V CE (3 µs) Collector-Emitter Dynamic Voltage V CC = 300 V RC = 12 Ω IB1 = 0.75 A Tj = 100 oC 4.5 8 V VCE (5 µ s) Collector-Emitter Dynamic Voltage V CC = 300 V RC = 12 Ω IB1 = 0.75 A Tj = 100 oC 2.5 4.5 V ts tf tc Storage Time Fall Time Cross-over Time IC = 25A VCC = 50 V V BB = -5 V RBB = 0.6 Ω V clamp = 450 V IB1 = 0.5 A L = 0.1 mH Tj = 100 oC 3.2 0.25 0.75 0.5 1.5 µ s µ s µ s V CEW Maximum Collector Emitter Voltage Without Snubber ICWoff = 42 A IB1 = 2 A V BB = -5 V VCC = 50 V L = 0.06 mH RBB = 0.6 Ω Tj = 125 oC 450 V V F∗ Diode Forward Voltage IF = 35 A Tj = 100 oC 1.5 1.85 V IRM Reverse Recovery Current V CC = 200 V IF = 35 A diF/dt = -200 A/µ s L < 0.05 µH Tj = 100 oC 20 24 A ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % To evaluate the conduction losses of the diode use the following equations: VF = 1.5 + 0.001 IF P = 1.5 IF(AV) + 0.001 I2 F(RMS) # See test circuits in databook introduction ESM4045DV Obsolete Product(s) - Obsolete Product(s)

Obsolete Product(s) - Obsolete Product(s) Safe Operating Areas Derating Curve Collector Emitter Saturation Voltage Thermal Impedance Collector-emitter Voltage Versus base-emitter Resistance Base-Emitter Saturation Voltage ESM4045DV Obsolete Product(s) - Obsolete Product(s)

Obsolete Product(s) - Obsolete Product(s) Reverse Biased SOA Reverse Biased AOA Switching Times Inductive Load Foward Biased SOA Forward Biased AOA Switching Times Inductive Load Versus Temperature ESM4045DV Obsolete Product(s) - Obsolete Product(s)

Obsolete Product(s) - Obsolete Product(s) Turn-on Switching Waveforms Dc Current Gain Typical VF Versus IF Peak Reverse Current Versus diF/dt Turn-on Switching Test Circuit ESM4045DV Obsolete Product(s) - Obsolete Product(s)

Obsolete Product(s) - Obsolete Product(s) Turn-on Switching Test Circuit Turn-off Switching Waveforms Turn-off Switching Test Circuit of Diode Turn-off Switching Waveform of Diode ESM4045DV Obsolete Product(s) - Obsolete Product(s)

Obsolete Product(s) - Obsolete Product(s) DIM. mm inch A 11.8 12.2 0.465 0.480 A1 8.9 9.1 0.350 0.358 B 7.8 8.2 0.307 0.322 C 0.75 0.85 0.029 0.033 C2 1.95 2.05 0.076 0.080 D 37.8 38.2 1.488 1.503 D1 31.5 31.7 1.240 1.248 E 25.15 25.5 0.990 1.003 E1 23.85 24.15 0.938 0.950 E2 24.8 0.976 G 14.9 15.1 0.586 0.594 G1 12.6 12.8 0.496 0.503 G2 3.5 4.3 0.137 1.169 F 4.1 4.3 0.161 0.169 F1 4.6 5 0.181 0.196 P 4 4.3 0.157 0.169 P1 4 4.4 0.157 0.173 S 30.1 30.3 1.185 1.193 P093A ISOTOP MECHANICAL DATA ESM4045DV Obsolete Product(s) - Obsolete Product(s)

Obsolete Product(s) - Obsolete Product(s) Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics. All other names are the property of their respective owners. © 2003 STMicroelectronics – All Rights reserved STMicroelectronics GROUP OF COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com ESM4045DV Obsolete Product(s) - Obsolete Product(s)