ESM1600B STMICROELECTRONICS | Alldatasheet

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QUAD COMPARATOR INTERFACE CIRCUIT .MINIMUM HYSTERESIS VOLTAGE AT EACH INPUT : 0.3V .OUTPUT CURRENT : 15 mA .LARGE SUPPLY VOLTAGE RANGE : + 10V to + 35V .INTERNAL THERMAL PROTECTION .INPUT AND OUTPUT CLAMPING PROTEC- TION DIODES.

DESCRIPTION

The ESM1600Bis a quadruplecomparatorintented to provide an interface between signal processing and transmitting lines in very noisy industrial sur- roundings. Outputof eachcomparator,used asline driver, sup- plies a constant current (PNP output stage) and is specially well protected against powerful overvol- tages. The open collector output circuit allows the connectionof several comparatorsto a single trans- mitting line. The ESM1600B can operate as receiver on a line transmitting noisy high-voltage signals. Hysteresis effect, internally implemented on inputs of each comparator provides an excellent noise immunity. In addition, each input is also protected against overvoltages. The ESM1600B can operate in a wide supply vol- tage range (standard operational amplifier± 15 V supply or single + 12 V or + 24 V supplies used in industrial electronic sets). Moreover, internal thermal protection circuitry cuts out the output current of the fourcomparatorswhen power dissipation becomes excessive. DIP14 SO16 DIP14 SO16 1 - Inverting input 1 2 - Non-inverting input 1 3 - Output 1 4 - Non-inverting input 2 5 - Inverting input 2 6 - Output 2 7 - GND 8 - Output 3 9 - Inverting input 3 10 - Non-inverting input 3 11 - Output 4 12 - Non-inverting input 4 13 - Inverting input 4 14 - V CC 1 - Inverting input 1 2 -Non-inverting input 1 3 - Output 1 4 - Non-inverting input 2 5 - Inverting input 2 6 - Output 2 7 - GND 8 - N.C. 9 - N.C. 10 - Output 3 11 - Inverting input 3 12 - Non-inverting input 3 13 - Output 4 14 - Non-inverting input 4 15 - Inverting input 4 16 - V CC ORDER ING NUMBERS: ESM1600B (DIP14) ESM1600BFP (SO16) PIN CONNECTIONS (top view)

Symbol Parameter Value Unit VCC Supply Voltage 45 V VID Differential Input Voltage 45 V VI Input Voltage –0.7 to +45 V IO (max) Output Current Internally Limited mA Ptot Power Dissipation Internally Limited W Top Operating Ambient Temperature Range –25 to +85 oC Tstg Storage Temperature Range –40 to +150 oC ESM1600B

ELECTRICAL CHARACTERISTICS

VCC = +35V, -25oC ≤ Tamb ≤ +85oC (unless otherwise specified) VI VI – Input Voltage Range - Note 1 Non-inverting Input Inverting Input V V C Input Control Voltage (2V < VCM < 33V) - Note 2 150 500 mV 1 IIB Input Bias Current - Note 3 1 5 µA ISC Short-circuit Output Current VCC = +10 to +35 V 6 25 mA 2 VCC –VO Output Saturation Voltage (high level) - (IO = –10mA) 1 1.5 V 3 IOL IOH Output Off-state Current (VI + = 2V, VI – = 33V) 1 5 µA 4 ICC Supply Current R L = ∞ for the 4 Comparators R L Common for the 4 Comparators mA 5 SVO Output Slew-rate (RL =3 kΩ ,Tamb = +25oC) 1 V/µs VF Input Protective Diode Forward Voltage (I = 20mA, Tamb = +25oC) 1.5 V – Energy of Pulses against which Circuit Output is Protected (Tamb = +25oC) - Note 4 20 mJ – Pulsed Current Applied to Protective Output Diodes (Tamb = +25oC) - Note 5 0.4 Notes : 1. When negative input is biased between 0 and 2 volts output is always low. 2. Comparator hysteresis voltage on positive input on the one hand and negative input on the other hand equals sum of input control voltages VC1 +V C2 or VC3 +V C4. 3. Input current flows out of the circuit owing to PNP input stage. This current is constant and independent of output level. So no load change is transmitted to inputs. 4. By definition, a circuit is immunized against powerful signals when no durable character istic change occurs after the application of these signals and when the circuit has not been destroyed. In industrial surroundings, parasitic signals contain usually high voltage (over 200 V) AC harmonics having variable impedan ce of 500 Ω to 10kΩ . Thepowerdissipation of thesesignals is dividedbetweenclamping diodes andthe VCC . Simulationis usedto determine themaximum energy level. The injected current value cannot in any case exceed 3A. 5. Output protective diodes are tested individually by means of positive and negative discharge voltages of a capacitor. The negative discharge control occurs through a single diode. During positive discharge, due to theproperties of integration,a grounded collector PNP transistor appea rs in parallel with the clamping diode connecte d to V CC . A part of the current flows through this transistor, VCE being greater than VCC . If T is the total discharge duration, energy dissipated in the circuit is : For a certain injected current, the lower the current I2, thatis to say the lower the PNP current gain the smaller the energy is dissipated in the cir- cuit. Topology and technological processes have been chose n to shorten this current gain. W= ⌠⌡ T [i1 ⋅ vd +i2 (VCC + vd) ]dt O ESM1600B

DIP14 PACKAGE MECHANICAL DATA Dimensions Millimeters Inches a1 0.51 0.020 B 1.39 1.65 0.055 0.065 b 0.5 0.020 b1 0.25 0.010 D 20 0.787 E 8.5 0.335 e 2.54 0.100 e3 15.24 0.600 F 7.1 0.280 i 5.1 0.201 L 3.3 0.130 Z 1.27 2.54 0.050 0.100 DIP14.TBL ESM1600B

S016 PACKAGE MECHANICAL DATA Dimensions Millimeters Inches A 1.75 0.069 a1 0.1 0.2 0.004 0.008 a2 1.6 0.063 b 0.35 0.46 0.014 0.018 b1 0.19 0.25 0.007 0.010 C 0.5 0.020 c1 45 o (typ.) D 9.8 10 0.386 0.394 E 5.8 6.2 0.228 0.244 e 1.27 0.050 e3 8.89 0.350 F 3.8 4.0 0.150 0.157 G 4.6 5.3 0.181 0.209 L 0.5 1.27 0.020 0.050 M 0.62 0.024 S8 o (max.) SO16.TB L ESM1600B

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the consequence s of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics.  1997 SGS-THOMSON Microelectronics – Printed in Italy – All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. ESM1600B