ESM101 RECTRON | Alldatasheet
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SURFACE MOUNT GLASS PASSIVATED VOLTAGE RANGE 50 to 400 Volts CURRENT 1.0 Ampere RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION
FEATURES
- Fast switching * Glass passivated device * ldeal for surface mounted applications * Low leakage current * Metallurgically bonded construction * Mounting position: Any * Weight: 0.015 gram * Epoxy : Device has UL flammability classification 94V-0 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 o C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. ELECTRICAL CHARACTERISTICS (At TA = 25 o C unless otherwise noted) ESM101 THRU ESM106 MELF MAXIMUM RA TINGS (At TA = 25 o C unless otherwise noted) SUPER FAST SILICON RECTIFIER 2. Measured at 1 MHZ and applied reverse voltage of 4.0 volts. Dimensions in inches and (millimeters) 2001-4 RATINGS Maximum Recurrent Peak Reverse Voltage Maximum RMS Volts Maximum DC Blocking Voltage Maximum Average Forward Current at TA = 55 o C Peak Forward Surge Current, IFM (surge): 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Typical Junction Capacitance (Note 2) Operating and Storage Temperature Range SYMBOL V RRM VDC IO IFSM C J TJ, TSTG V RMS Volts Volts Volts Amps1.0 -65 to + 175 Amps pF 0 C UNITSESM101 ESM104ESM102 ESM105 ESM106ESM103 50 200 100 300 400150 35 140 70 210 280105 50 200 100 300 400150 at Rated DC Blocking Voltage CHARACTERISTICS Maximum Reverse Recovery Time (Note 1) V F SYMBOL IR trr UNITS 0.95 5.0 uAmps nSec Maximum DC Reverse Current Maximum Forward Voltage at 1.0A DC Volts @T A = 25 o C @T A =125 o C ESM101 ESM104ESM102 ESM105 ESM106ESM103 1.25 100 MECHANICAL DATA .095 (2.4) .106 (2.7) .028 (.60) .018 (.46) .190 (4.8) .205 (5.2) SOLDERABLE ENDS
RATING AND CHARACTERISTIC CURVES ( ESM101 THRU ESM106 ) FIG. 1 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC NONINDUCTIVE NONINDUCTIVE D.U.T
25 Vdc
(approx) (¡V) (¡V) ( + ) ( + ) NON- INDUCTIVE OSCILLOSCOPE (NOTE 1) PULSE GENERATOR (NOTE 2) NOTES: 1 Rise Time = 7ns max. Input Impedance = 1 megohm. 22 pF. 2. Rise Time = 10ns max. Source Impedance = 50 ohms. trr +0.5A -0.25A -1.0A 1cm SET TIME BASE FOR 5/10 ns/cm FIG. 2 - TYPICAL FORWARD CURRENT DERATING CURVE AVERAGE FORWARD CURENT, (A)AMBIENT TEMPERATURE ( ) 2.0 1.0 0 25 50 75 100 125 150175 Single Phase Half Wave 60Hz Resistive or Inductive Load FIG. 3 - TYPICAL REVERSE CHARACTERISTICS INSTANTANEOUS REVERSE CURRENT, (uA) PERCENT OF RATED PEAK REVERSE VOLTAGE, (%) TJ = 25 TJ = 100 TJ = 150 100 1.0 .01 400 20 60 80 100 120 140 FIG. 4 - TYPICAL INSTANTANEOUS INSTANTANEOUS FORWARD CURRENT, (A) INSTANTANEOUS FORWARD VOLTAGE, (V) .001 .01 1.0 FORWARD CHARACTERISTICS ESM101~ESM104ESM105~ESM106 Pulse Width = 300uS 1% Duty Cycle TJ = 25 FIG. 6 - TYPICAL JUNCTION CAPACITANCE REVERSE VOLTAGE, ( V ) 200 100 .1 .2 .4 1.0 2 4 10 20 40 100 TJ = 25 JUNCTION CAPACITANCE, (pF) FIG. 5 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT, (A) NUMBER OF CYCLES AT 60Hz .1 .5 1 2 5 10 20 50 400 200100 TJ = 25