ESH3BH TSC | Alldatasheet
Document overview
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Technical content
ESH3BH – ESH3DH Taiwan Semiconductor
1 Version: A2102
3A, 100V - 200V Ultra Fast Surface Mount Rectifier
FEATURES
- AEC-Q101 qualified
- Glass passivated chip junction
- Ideal for automated placement
- Low profile package
- Ultra Fast recovery time for high efficiency
- Moisture sensitivity level: level 1, per J-STD-020
- RoHS Compliant
- Halogen-free according to IEC 61249-2-21
APPLICATIONS
- DC to DC converter
- Automotive application
- Car lighting
- Snubber
- Freewheeling application MECHANICAL DATA
- Case: DO-214AB (SMC)
- Molding compound meets UL 94V-0 flammability rating
- Terminal: Matte tin plated leads, solderable per J-STD-002
- Meet JESD 201 class 2 whisker test
- Polarity: Indicated by cathode band
- Weight: 0.200g (approximately) KEY PARAMETERS PARAMETER VALUE UNIT IF 3 A VRRM 100 - 200 V IFSM 125 A TJ MAX 175 °C Package DO-214AB (SMC) Configuration Single die DO-214AB (SMC) ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL ESH3BH ESH3CH ESH3DH UNIT Marking code on the device ESH3B ESH3C ESH3D Repetitive peak reverse voltage VRRM 100 150 200 V Reverse voltage, total rms value VR(RMS) 70 105 140 V Forward current IF 3 A Peak forward surge current, 8.3ms single half sine-wave superimposed on rated load IFSM 125 A Junction temperature TJ - 55 to +175 °C Storage temperature TSTG - 55 to +175 °C
ESH3BH – ESH3DH Taiwan Semiconductor
2 Version: A2102
Junction-to-lead thermal resistance RӨJL 12 °C/W Junction-to-ambient thermal resistance RӨJA 47 °C/W ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER CONDITIONS SYMBOL TYP MAX UNIT Forward voltage(1) IF = 3A, TJ = 25°C VF - 0.9 V Reverse current @ rated VR (2) TJ = 25°C IR - 5 µA TJ = 125°C - 150 µA Junction capacitance 1MHz, VR = 4.0V CJ 45 - pF Reverse recovery time IF = 0.5A, IR = 1.0A, Irr = 0.25A trr - 20 ns Notes: 1. Pulse test with PW = 0.3ms 2. Pulse test with PW = 30ms
ORDERING INFORMATION
ORDERING CODE(1) PACKAGE PACKING ESH3xH DO-214AB (SMC) 3,000 / Tape & Reel Notes: 1. “x” defines voltage from 100V(ESH3BH) to 200V(ESH3DH)
ESH3BH – ESH3DH Taiwan Semiconductor
3 Version: A2102
(TA = 25°C unless otherwise noted) Fig.1 Forward Current Derating Curve Fig.2 Typical Junction Capacitance Fig.3 Typical Reverse Characteristics Fig.4 Typical Forward Characteristics Fig.5 Maximum Non-Repetitive Forward Surge Current 25 50 75 100 125 150 175 0.1 1 10 100 f=1.0MHz Vsig=50mVp-p 0.1 100 1000 10 20 30 40 50 60 70 80 90 100 TJ=25°C TJ=125°C TJ=75°C 0.1 Pulse width 300μs 1% duty cycle 100 125 150 1 10 100 8.3ms single half sine wave CAPACITANCE (pF) INSTANTANEOUS REVERSE CURRENT (μA) PERCENT OF RATED PEAK REVERSE VOLTAGE (%) INSTANTANEOUS FORWARD CURRENT (A) (A) 0.001 0.01 0.1 Pulse width TJ=25°C TJ=125°C UF1DLW FORWARD VOLTAGE (V) AVERAGE FORWARD CURRENT (A) REVERSE VOLTAGE (V) LEAD TEMPERATURE (°C) NUMBER OF CYCLES AT 60 Hz PEAK FORWARD SURGE CURRENT (A)
ESH3BH – ESH3DH Taiwan Semiconductor
4 Version: A2102
(TA = 25°C unless otherwise noted) Fig.6 Reverse Recovery Time Characteristic and Test Circuit Diagram
ESH3BH – ESH3DH Taiwan Semiconductor
5 Version: A2102
PACKAGE OUTLINE DIMENSIONS DO-214AB (SMC) SUGGESTED PAD LAYOUT MARKING DIAGRAM P/N = Marking Code G = Green Compound YW = Date Code F = Factory Code
ESH3BH – ESH3DH Taiwan Semiconductor
6 Version: A2102
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