ESH1B SUNMATE | Alldatasheet
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Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage V RRM V RWM V R RMS Reverse Voltage V R(RMS) Average Rectified Output Current @T L = 120°C I O Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) I FSM Forward Voltage @I F = 1.0A V FM P e a k R e v e r s e C u r r e n t @ T A = 25°C At Rated DC Blocking Voltage @T A = 100°C I RM µA Reverse Recovery Time (Note 1) t rr Typical Junction Capacitance (Note 2) C j Typical Thermal Resistance (Note 3) R /G01JL Operating and Storage Temperature Range T T STG -65 to +150 °C Note: 1. Measured with I F = 0.5A, I R = 1.0A, I rr = 0.25A. See figure 5. 2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC. 3. Mounted on P.C. Board with 8.0mm land area. Maximum Ratings and Electrical Characteristics T A = 25/c176C unless otherwise specified Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Symbol Unit 100 150 200 V 70 105 140 V 1.0 A 50 A V 25 nS 1 of 2 Low forward voltage, low power loss Ultrafast recovery times for high efficiency Glass passivated chip junction Ideal for automated placement Low profile package A B C D GH E J Dim MinMax A 2.29 2.92 B 4.00 4.60 C 1.27 1.63 D 0.15 0.31 E 4.80 5.59 G 0.10 0.20 H 0.76 1.52 J 2.01 2.62 All Dimensions in mm SMA(DO-214AC) www.sunmate.tw