ESF501 SHUNYE | Alldatasheet
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Note: 1.Reverse recovery condition I F =0.5A,I R =1.0A,Irr=0.25A 2.Measured at 1MHz and applied reverse voltage of 4.0V D.C. P (5.0x5.0mm) copper pad areas MAXIMUM R A TINGS AND ELECTRICA L CHARACTERISTICS VO L TS VO L TS VO L TS SYMBOLS UNITS Amps Amps V olts V RRM V RMS V DC I A I FSM V F 5.0 150.0 0.95 Operating junction and storage temperature range Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current at T L =75 C Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) Maximum instantaneous forward voltage at 5.0A Maximum DC reverse current T A =25 C at rated DC blocking voltage T A =100 C I R 5.0 100.0 R θ JA C J T J T STG 47.0 58.0 -65 to +150 pF C A µ T ypical thermal resistance (NOTE 3) C/W T ypical junction capacitance (NOTE 2) Maximum reverse recovery time (NOTE 1) t rr ns ESF5 ESF5 ESF5 ESF5 Ratings at 25 C ambient temperature unless otherwise specified. Sing le phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%. 100 100 400 280 400 600 420 600 200 140 200 1.25 Case : JEDEC TO-277B molded plastic body over passivated chip T erminals : Solder plated, solderable per MIL-STD-750, Method 2026 Polarity : Color band denotes cathode end Mounting Position Any W eight :0.007 ounce, 0.25grams The plastic package carries Underwriters Laboratory Flammability Classification 94 V For surface mounted applications Low reverse leakage Built-in strain relief,ideal for automated placement High forward surge current capability High temperature soldering guaranteed:
250 C/10 seconds at terminals
A TURES MECHANICA L D AT A Glass passivated chip junction 1.7 www.shunyegroup.com.cn V2.22 SURFACE MOUNT SUPER FAST RECTIFIER ESF501 THRU ESF506 T O B
5.0 4.0 3.0 2.0 1.0 0 25 50 75 100 125 150 175 150 120 0.1 1.0 10 100 0.01 0.1 1 10 100 100 0.1 REVERSE VO LT AGE,VO L TS t,PULSE DUR A TION,sec. FIG. 5-TYPICA L JUNCTION CA P ACI T ANCE FIG. 6-TYPICA L TRANSIENT THERMA L IMPEDANC E FIG. 3-TYPICA L INS T AN T ANEOUS FO R W ARD CHARACTERISTICS NUMBER OF CYCLES A T 60 Hz FIG. 2-MAXIMUM NON-REPETITIVE PEAK FO R W ARD SURGE CURRENT FIG. 1- FO R W ARD CURRENT DER A TING CU R VE T N E R R U C D E I F I T C E R D R A W R O F E G A R E V A S E R E P M A D R A W R O F S U O E N A T N A T S N I S E R E P M A T N E R R U C F p E C N A T I C A P A C N O I T C N U J T N E R R U C E G R U S D R A W R O F K A E P S E R E P M A INS T AN T ANEOUS FO R W ARD VO LT AGE, VO L TS Single Phase Half W ave 60Hz Resistive or inductive Load 100 T J =25 C 100 200 0 20 40 60 80 100 1,000 100 0.1 0.01 TJ=100 C TJ=25 C PERCEN T AGE OF PEAK REVERSE VO LT AGE,% FIG. 4-TYPICA L REVERSE CHARACTERISTICS T N E R R U C E S R E V E R S U O E N A T N A T S N I S E R E P M A O R C I M E C N A D E P M I L A M R E H T T N E I S N A R T W C AMBIENT TEMPER A TURE, C 0 0.4 0.8 1.2 1.6 1.8 0.0 ESF501-ESF502 ESF504-ESF506 T J =25 C PULSE WIDTH=300 µ s 1%DUT Y CYCLE 8.3ms SINGLE HALF SINE- W A VE (JEDEC Method) www.shunyegroup.com.cn V2.22 ESF501 THRU ESF506
www.shunyegroup.com.cn V2.22 ESF501 THRU ESF506 P a c k a g e O u t l i n e D i m e n s i o n s S u g g e s t e d S o l d e r P a d L a y o u t P a c k i n g I n f o r m a t i o n P a c k a g i n g P a c k a g e R e e l Q u a n t i t y R e e l S i z e T a p e S i z e R e e l T O p c s m m