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/hexstar2 Low forward voltage drop /hexstar2 Fast switching for high efficiency /hexstar2 Glass passivated with high current capability /hexstar2 Case: Heatsink TO-3P/TO-247AD /hexstar2 High surge current capability /hexstar2 Weight: 5.6 gram approximately /hexstar2 Polarity: As marked on diode body method 208 /hexstar2 Mounting position: Any /hexstar2 Terminals: Solderable per MIL-STD-202 Mechanical Data /hexstar2 Low reverse leakage current (1) Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A. (2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC. (3) Thermal Resistance junction to case. /hexstar2 Epoxy: UL 94V-0 rate flame retardant Unit : inch (mm) ESAD25-02D thru ESAD25-06D Pb Free Plating Product ESAD25-02D thru ESAD25-06D
16.0 Ampere Dual Doubler Tandem Polarity Fast Recovery Rectifier Diodes
© 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/ Page 1/2 Application Pb -55 to + 150 SYMBOL V RRM V RMS V DC IF (AV) I FSM V F I R Trr C J T J , T STG 140 200 400 280 600 420 600 16.0 10.0 175 0.98 250 2.2 UNIT V V V V A A uA uA o C pF o CW nS Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Peak Forward Surge Current, 8.3ms single Maximum Instantaneous Forward Voltage Maximum DC Reverse Current @T J =25 o C Typical junction Capacitance (Note 2) Operating Junction and Storage Current T C =100 o C Half sine-wave superimposed on rated load (JEDEC method) @ 8.0 A At Rated DC Blocking Voltage @T J =125 o C Maximum Reverse Recovery Time (Note 1) Typical Thermal Resistance (Note 3) R JC Temperature Range 150 ESAD25-02C ESAD25-02N ESAD25-02D Positive Negative Doubler Common Cathode Case Case Case Common Anode Suffix "N" Suffix "D"Suffix "C" 200 400 1.3 1.7 /hexstar2 Automotive Inverters/Solar Inverters /hexstar2 Plating Power Supply,SMPS and UPS /hexstar2 Car Audio Amplifiers and Sound Device Systems Rev.04/2014 Tandem Polarity TO-247AD/TO-3P 0.640(16.25) 0.125(3.20) 0.087(2.20) 0.070(1.80) 0.126(3.20) 0.110(2.80) 0.050(1.25) 0.045(1.15) 0.225(5.70) 0.204(5.20) 0.225(5.70) 0.204(5.20) 0.600(15.25) 0.580(14.75) 0.839(21.30) 0.819(20.80) 0.170(4.30) 0.145(3.70) 0.798(20.25) 0.777(19.75) 0.199(5.05) 0.175(4.45) 0.095(2.40) 0.030(0.75) 0.017(0.45) ESAD25-04C ESAD25-04N ESAD25-04D ESAD25-06C ESAD25-06N ESAD25-06D
FIG.1 - FORWARD CURRENT DERATING CURVE FIG.3 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS AVERAGE FORWARD RECTIFIED CURRENT, AMPERES IINSTANTANEOUS FORWARD CURRENT, AMPERES 0.1 0.01 0 50 100 150 CASE TEMPERATURE, o C INSTANTANEOUS FORWARD VOLTAGE, VOLTS FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT, AMPERES NUMBER OF CYCLES AT 60Hz 100 125 150 175 200 11 0 1 0 0 FIG.4 - TYPICAL REVERSE CHARACTERISTICS PERCENT OF RATED PEAK REVERSE VOLTAGE,% INSTANTANEOUS REVERSE CURRENT, MICROAMPERES 0.1 1000 100 20 40 60 80 100 FIG.5 - TYPICAL JUNCTION CAPACITANCE REVERSE VOLTAGE, VOLTS 0.1 JUNCTION CAPACITANCE, pF 1000 1.0 4.0 10 100 100
60 Hz Resistive or
Pulse Width 8.3ms Single Half-Sire-Wave (JEDEC Method) T J =25 o C PULSE WIDTH=300uS 1% DUTY CYCLE T J =125 o C T J =25 o C T J = 25 o C f = 1.0 MHZ Vsig = 50mVp-p ESAD25-04D ESAD25-02D ESAD25-06D © 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/ Page 2/2Rev.04/2014 ESAD25-02D thru ESAD25-06D