ES8JC ASEMI | Alldatasheet
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W eight: 0.21 gr am V OLTAGE RANG 200 to 600 Volts CURRENT 8.0 Ampere ES8JES8GES8D 1-2 www.asemi99.com 2018.11 Rev.3.1 M aximum Ratings and Electrical Characteristics R ating at 25 O C am bient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Ty pe Number Units M aximum Recurrent Peak Reverse Voltage VRRM Ma ximum RMS Voltage VRM S M aximum DC Blocking Voltage VDC M aximum Average Forward Rectified Current See Fig. 1 I( AV) 8.0 A P eak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) IFSM 125 A M aximum Instantaneous Forward Voltage @ 8.0A VF M aximum DC Reverse Current @TA =25 o C at Rated DC Blocking Volt age @ T A=100 o C IR 10 350 uA uA M aximum Reverse Recovery Time ( Note 1 ) Trr 3 5 nS Ty pical Junction Capacitance ( Note 2 ) C j 45 30 M aximum Thermal Resistance (Note 3) RθJA RθJL o W O perating Temperature Range TJ - 55 to +150 o C S torage Temperature Range TSTG - 55 to +150 o C No tes: 1. R everse Recovery Test Conditions: I F= 0.5A, I R= 1.0A, I RR=0. 25A 2. M easured at 1 MHz and Applied V R=
4.0 Volts
- U pF 200 400 600 V 40 280 420 V 200 400 600 V Symbol 0.98 1.3 1.7 V F e a t u r e s /cuspopenSpecial for Automotive LED/HID lamp /cuspopen For surface mounted applicati on /cuspopen Low profile packa ge /cuspopen Built-in strain relie f /cuspopen Ideal for automated placement /cuspopenEasy pick and pl ace /cuspopen Superfast recovery time for high efficiency /cuspopenGlass passivated chip junction /cuspopenH igh temperature soldering: 6 0 O C /10 seconds at terminals /cuspopenPlastic material used carries Underwriters Labor atory Classification 94V- 0 M echanical Data /cuspopenC ases: Molded plastic /cuspopenT erminals: Pure tin plated, lead free . /cuspopenP olarity: Indicated by cath ode band /cuspopenP acking: 12mm tape per EIA STD RS-481 /cuspopen DO-214AB/SMC Dimensions in inches and (millimeters) surface mount ultra-fast recovery diode .108(2.75) .220(5.59) .280(7.11) .260(6.60) .012(.305) .006(.152) .002(.051) .008(.203) .320(8.13) .305(7.75) .079(2.00) .103(2.62) .060(1.52) .030(0.76)
NG AND CHRACTERISTIC CURVES ES8D Thru ES8J 2-2 www.asemi99.com 2018.11 Rev.3.1 V OLTAGE RANG 200 to 600 Volts CURRENT 8.0 Ampere FIG.3- MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT. (A) 1 10 100 125 100 NUMBER OF CYCLES AT 60Hz 8.3ms Single Half Sine Wave (JEDEC Method) at T =120 CL o FIG.1- MAXIMUM FORWARD CURRENT DERATING CURVE A VERAGE FORWARD CURRENT. (A) 90 100 120 140 150130110 8.0 10.0 4.0 LEAD TEMPERATURE. ( C) o RESISTIVE OR INDUCTIVE LOAD 0.4X0.4"(10X10mm) COPPER PAD AREAS 10 100 FIG.4- TYPICAL JUNCTION CAPACITANCE JUNCTION CAPACITANCE.(pF) REVERSE VOLTAGE. (V) Tj=25 C f=1.0MHz Vsig=50mVp-p FIG.2- TYPICAL REVERSE CHARACTERISTICS 0 20 40 60 80 100 120 140 100 1000 0.1 0.01 PERCENT OF RATED PEAK REVERSE VOLTAGE. (%) Tj=125 C Tj=85 Tj=25 INST ANTANEOUS REVERSE CURRENT .( A ) FIG.5- TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS INST ANTANEOUS FORWARD CURRENT. (A) 0.4 0.6 0.01 0.1 FORWARD VOLTAGE. (V) Tj=25 C PULSE WIDTH-300 S 1% DUTY CYCLE FIG.6- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM 50/c87 NONINDUCTIVE /c49/c87 NON INDUCTIVE OSCILLOSCOPE (NOTE PULSE GENERATOR (NOTE 2) DUT (+) 50Vdc (approx) (-) NOTES: 1. Rise Time=7ns max. Input Impedance= 1 megohm 22pf 2. Rise Time=10ns max. Sourse Impedance= 50 ohms (-) (+) 10/c87 NONINDUCTIVE -1.0A -0.25A +0.5A trr 1cm SET TIME BASE FOR 5/ 10ns/ cm surface mount ultra-fast recovery diode ES8DC T HRU ES8JC