ES8D THINKISEMI | Alldatasheet
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/cuspopen Special for Automotive LED/HID lamp /cuspopen For surface mounted application /cuspopen Low profile package /cuspopen Built-in strain relief /cuspopen Ideal for automated placement /cuspopen Easy pick and place /cuspopen Superfast recovery time for high efficiency /cuspopen Glass passivated chip junction /cuspopen High temperature soldering: 2 6 0 O C/10 seconds at terminals /cuspopen Plastic material used carries Underwriters Laboratory Classification 94V-0 Mechanical Data /cuspopen Cases: Molded plastic /cuspopen Terminals: Pure tin plated, lead free. /cuspopen Polarity: Indicated by cathode band /cuspopen Packing: 12mm tape per EIA STD RS-481 /cuspopen Weight: 0.093 gram Maximum Ratings and Electrical Characteristics Rating at 25 O C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Type Number Units Maximum Recurrent Peak Reverse Voltage V RRM Maximum RMS Voltage V RMS Maximum DC Blocking Voltage V DC Maximum Average Forward Rectified Current See Fig. 1 I (AV) 8.0 A Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) I FSM 125 A Maximum Instantaneous Forward Voltage @ 8.0A V F Maximum DC Reverse Current A =25 o C at Rated DC Blocking Voltage @ T A =100 o C I R 350 uA uA Maximum Reverse Recovery Time ( Note 1 ) Trr 35 nS Typical Junction Capacitance ( Note 2 ) Cj 45 30 Maximum Thermal Resistance (Note 3) R θJA R θJL o C/W Operating Temperature Range T J -55 to +150 o C Storage Temperature Range T STG -55 to +150 o C Notes: 1. Reverse Recovery Test Conditions: I F =0.5A, I R =1.0A, I RR =0.25A 2. Measured at 1 MHz and Applied V R =4.0 Volts pF SMC / DO-214AB Unit: inch ( mm ) )57.2(801. )52.3(821. )95.5(022. )22.6(542. .260 (6.60) .280 (7.11) .006 (.152) .012 (.305) .008(.203) .002(.051) .305 (7.75) .320 (8.13) .030 (0.76) .050 (1.27) )00.2(970. )26.2(301. 200 400 600 V 140 280 420 V 200 400 600 V Symbol 0.98 1.3 1.7 V ES8D ES8G ES8J ES8D thru ES8J Pb Free Plating Product ES8D thru ES8J Pb
8.0 Ampere Surface Mount Super Fast Recovery Rectifiers
© 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/ Page 1/2Rev.02
FIG.3- MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT PEAK FOR WARD SURGE CURRENT . (A) 1 10 100 125 100 NUMBER OF CYCLES AT 60Hz 8.3ms Single Half Sine Wave (JEDEC Method) at T =120 C L o FIG.1- MAXIMUM FORWARD CURRENT DERATING CURVE AVERAGE FOR WARD CURRENT . (A) 80 90 100 120 140 150 130110 8.0 10.0 4.0 LEAD TEMPERATURE. ( C) o RESISTIVE OR INDUCTIVE LOAD 0.4X0.4"(10X10mm) COPPER PAD AREAS 10 100 FIG.4- TYPICAL JUNCTION CAPACITANCE JUNCTION CAP ACITANCE.(pF) REVERSE VOLTAGE. (V) Tj=25 C f=1.0MHz Vsig=50mVp-p FIG.2- TYPICAL REVERSE CHARACTERISTICS 0 20 40 60 80 100 120 140 100 1000 0.1 0.01 PERCENT OF RATED PEAK REVERSE VOLTAGE. (%) Tj=125 C Tj=85 C Tj=25 C INSTANTANEOUS REVERSE CURRENT .( A ) FIG.5- TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS INSTANTANEOUS FOR WARD CURRENT . (A) 0.01 0.1 FORWARD VOLTAGE. (V) Tj=25 C PULSE WIDTH-300 S 1% DUTY CYCLE FIG.6- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM 50/c87 NONINDUCTIVE /c49/c87 NON INDUCTIVE OSCILLOSCOPE (NOTE 1) PULSE GENERATOR (NOTE 2) DUT (+) 50Vdc (approx) (-) NOTES: 1. Rise Time=7ns max. Input Impedance= 1 megohm 22pf 2. Rise Time=10ns max. Sourse Impedance= 50 ohms (-) (+) 10/c87 NONINDUCTIVE -1.0A -0.25A +0.5A trr 1cm SET TIME BASE FOR 5/ 10ns/ cm ES8D thru ES8J © 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/ Page 2/2Rev.02