ES5ABF SEMIPOWER | Alldatasheet
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Technical content
Surface Mount Superfast Recovery Rectifier Reverse Voltage – 50 to 600 V Forward Current – 5 A MECHANICAL DATA
- Terminals: Solderable per MIL-STD-750, Method 2026
- pprox. Weight: 57mg / 0.002oz Case: SMBF A Maximum DC Blocking Voltage Peak Forward Surge Current 8.3 ms Single Half Sine Wave Superimposed on Rated Load Maximum Forward Voltage at 5A Parameter Maximum Repetitive Peak Reverse Voltage Maximum RMS voltage Operating and Storage Temperature Range Maximum Average Forward Rectified Current at T = 115 °Cc Maximum DC Reverse Current T = 25 °Ca at Rated DC Blocking Voltage T =125 °Ca VRRM VRMS VDC IF(AV) IFSM VF IR Cj T , Tj stg 50 100 150 200 300 400 600 V 35 70 105 140 210 280 420 V V 150 1.0 100 -55 ~ +150 A A V μA ns Symbols Ratings at ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. 25 °C Absolute Maximum Ratings and Characteristics trr pF ES5ABF ES5BBF ES5CBF ES5DBF ES5EBF ES5GBF ES5JBF Units 50 100 150 200 300 400 600 1.25 1.7
FEATURES
For surface mounted applications
- Low profile package
- Glass Passivated Chip Junction
- Superfast reverse recovery time
- Lead free in comply with EU RoHS 2011/65/EU directives Page 1 of 3 Typical Thermal Resistance RθJA RθJC 12 °C/W2） PINNING PIN
DESCRIPTION
Simplified outline SMBF and symbol 1 2 ES5ABF THRU ES5JBF 135 Typical Junction Capacitance at V =4V, f=1MHzR Maximum Reverse Recovery Time （1） （2） （1）Measured with I = 0.5 A, I = 1 A, I = 0.25 AF R rr Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 2016 Rev 1.0
Fig.3 Typical Reverse Characteristics I - Current ( A)R Reverse μ 20 100600 0.1 1.0 % of PIV.VOLTS 100 40 80 300 T =25J °C T =75J °C T =125J °C 50 ohm Noninductive 25Vdc approx D.U.T 10 ohm Noninductive NonInductive 1 ohm OSCILLOSCOPE Note 1 PULSE GENERATOR Note 2 Note：1.Rise Time = 7ns, max. Input Impedance = 1megohm,22pF. 2. Ries Time =10ns, max. Source Impedance = 50 ohms. Fig.1 Reverse Recovery Time Characteristic And Test Circuit Diagram -0.25 -1.0 +0.5 trr 10ns/div Set time Base for 10ns/div Case Temperature (°C) Junction Capacitance ( pF) 1.0 10 1000.1 100 Reverse Voltage (V) T =25J °C Fig.5 Typical Junction Capacitance T =25J °C f = 1.0MHz Vsig = 50mVp-p 25 50 75 100 125 150 175 Average Forward Current (A) Fig.2 Maximum Average Forward Current Rating Single phase half-wave 60 Hz resistive or inductive load Fig.4 Typical CharacteristicsForward 2.0 2.51.50 0.01 0.1 1.0 0.5 1.0 0.001 Instaneous Forward Current (A) Instaneous Forward Voltage (V) T =25J °C ES5JBF ES5EBF/WS5GBF ES5ABF~ES5DBF 100 125 175 10 100 Fig.6 Maximum Non-Repetitive Peak Forward Surage Current Peak A)Forward Surage Current ( Number of Cycles 150 ES5EBF/WS5JBF ES5ABF~ES5DBF 8.3 ms Single Half Sine Wave (JEDEC Method) ES5ABF THRU ES5JBF Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 2016 Rev 1.0 ES5ABF THRU ES5JBF Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 2016 Rev 1.0
The recommended mounting pad size Unit：mm(mil) 3.0(118)1.8(71) 2.54(100) 1.8(71) PACKAGE OUTLINE Plastic surface mounted package; 2 leads SMBF A C ∠ALL ROUND V AM e UNIT mm max min mil max min A C D E HE ∠ 2.2 1.9 e Bottom View HE g Top View 1.0 g g ∠ALL ROUND E D A E pad pad 51 10 173 146 216 43 7 165 138 200 ES5ABF THRU ES5JBF Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 2016 Rev 1.0