ES5A ZSELEC | Alldatasheet
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! G l ass Passivated Die Construction ! Low Forward Voltage Drop, High Efficiency ! Plastic Case Material has UL Flammability /G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01 Mechanical D ata ! Te rminals: Solder Plated, Solderable per MIL-STD-750, Method 2026 ! Polarity: Cathode Band or Cathode Notch ! Marking: Type Number Maximum Ra tings and Electrical Characteristics @TA=25°C unless otherwise specified P eak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 50 100 150 200 300 400 600 V RM S Reverse Voltage VR(RMS) 35 70 105 140 210 280 420 V Av erage Rectified Output Current @T L = 120°C IO 4.0 A Non-Repet i tive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) I FSM 100 A Forward Vo ltage @I F = 4. 0A V FM 0.95 1.30 1.7 V P ea k R e v e r s e C u r r e n t @ TA = 25°C A t Rated DC Blocking Voltage @T A = 100° C IRM 5.0 500 µA Revers e Rec overy Time (Note 1) trr 35 nS T y pical Junction Capacitance (Note 2) Cj T y pical Thermal Resistance (Note 3) R/G01JL 35 °C Operat i ng and Storage Temperature Range Tj, TSTG -65 to +150 °C Note: 1. Measured with IF = 0.5A , IR = 1 .0A, Irr = 0.25A. See figure 5. 2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC. 1 of 2 Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com A B C D GH E J ! Lead Free: For RoHS / Lead Free Version Weight: SMC Weight: 0.20 grams (approx.) SMC/DO-214 AB Dim M in Max A 5.59 6. B 6.60 7. C 2.75 3. D 0.152 0. 305 E 7.75 8. F 2.00 2. G 0.051 0. 203 H 0.76 1. All Di mensions in mm Alldatasheet
ES5 A – ES5 J 0.01 0.1 1.0 0 0.2 0.4 I , INST ANTANEOUS FORWARD CURRENT (A)F V , INST ANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics F T = 25 C Pulse width = 300 s j ° m 50V DC Approx 50 NI (Non-inductive)W 10 NIW 1.0 NI W Oscilloscope (Note 1) Pulse Generator (Note 2) Device Under Test trr Settimebasefor5/10ns/cm +0.5A -0.25A -1.0ANotes: 1. Rise Time = 7.0ns max. Input Impedance = 1.0M , 22pF. 2. Rise Time = 10ns max. Input Impedance = 50 . W W Fig. 5 Reverse Recovery Time Characteristic and Test Circuit (+) (+) (-) (-) 100 1 10 100 C , CAP ACITANCE (pF)j V , REVERSE VOLTAGE (V) Fig. 4 Typical Junction Capacitance R T = 25 C f = 1.0MHz j ° ES5A -ES5D ES5E -ES5G ES5J 2 of 2 ES4A – ES4J Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com 2.0 25 75 10050 125 150 175 I , A VERAGE RECTIFIED CURRENT (A) O T , TERMINAL TEMPERATURE ( C) Fi . 1 Forward Current Deratin Curve T ° 3.0 4.0 1 10 100 I , PEAK FORWARD SURGE CURRENT (A) FSM NUMBER OF CYCLES AT 60Hz Fig. 3 Surge Current Derating Curve Single Half-Sine-Wave (JEDEC Method) 100 120 5.0 Alldatasheet